SavantIC Semiconductor Product Specification 2SB979 Silicon PNP Power Transistors DESCRIPTION With TO-3PN package ·Wide area of safe operation · APPLICATIONS ·For power amplifier and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -5 V -5 A 60 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SB979 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-30mA ;IB=0 -100 V V(BR)CBO Collector-base breakdown voltage IC=-5mA ;IE=0 -100 V V(BR)EBO Emitter-base breakdown voltage IE=-5mA ;IC=0 -5 V Collector-emitter saturation voltage IC=-3A; IB=-0.3A -1.5 V VBE Base-emitter on voltage IC=-1A;VCE=-5V -1.5 V ICBO Collector cut-off current VCB=-100V; IE=0 -50 µA IEBO Emitter cut-off current VEB=-5V; IC=0 -50 µA hFE-1 DC current gain IC=-1A ; VCE=-5V 40 hFE-2 DC current gain IC=-3A ; VCE=-5V 20 Transition frequency IC=-1A ; VCE=-5V 20 VCEsat fT CONDITIONS 2 MIN TYP. MAX UNIT 200 MHz SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 2SB979