SAVANTIC 2SD1243

SavantIC Semiconductor
Product Specification
2SD1243
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PN package
·Wide area of safe operation
APPLICATIONS
·Audio frequency power amplifier
·High frequency power amplifier
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
60
V
VCEO
Collector-emitter voltage
Open base
60
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
10
A
ICM
Collector current-peak
15
A
PC
Collector power dissipation
100
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SD1243
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=50mA ;IB=0
60
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ;IE=0
60
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
5
V
VCEsat
Collector-emitter saturation voltage
IC=5A ;IB=0.5A
1.5
V
VBEsat
Base-emitter saturation voltage
IC=5A ;IB=0.5A
2.0
V
ICBO
Collector cut-off current
VCB=60V; IE=0
50
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
50
µA
hFE
DC current gain
IC=3A ; VCE=3V
2
MIN
50
TYP.
MAX
UNIT
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3
2SD1243