SAVANTIC 2SC1034

SavantIC Semiconductor
Product Specification
2SC1034
Silicon NPN Power Transistors
DESCRIPTION
·With TO-66 package
·High breakdown voltage
APPLICATIONS
·For horizontal deflection output applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=? )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VEBO
Emitter-base voltage
Open collector
VALUE
UNIT
1100
V
13
V
1
A
25
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
?
Tstg
Storage temperature
-65~150
?
TC=25?
SavantIC Semiconductor
Product Specification
2SC1034
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25? unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CBO
Collector-base breakdown voltage
IC=10mA; IE=0
1100
V
V(BR)EBO
Emitter-base breakdown voltage
IE=5mA; IC=0
13
V
VCEsat
Collector-emitter saturation voltage
IC=750mA; IB=75m A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=750mA; IB=75m A
1.4
V
VCB=50V;IE=0
0.2
ICBO
Collector cut-off current
mA
VCB=800V;IE=0
5.0
IEBO
Emitter cut-off current
VEB=8V; IC=0
hFE
DC current gain
IC=750mA ; VCE=3V
fT
Transition frequency
IE=-0.2A ; VCE=10V
5
MHz
Cob
Output capacitance
IE=0 ; VCB=10V;f=1MHz
95
pF
2
4
4
mA
40
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3
2SC1034