SAVANTIC 2SD551

SavantIC Semiconductor
Product Specification
2SD551
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·Complement to type 2SB681
·Wide area of safe operation
APPLICATIONS
·For audio frequency power amplifier
applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
150
V
VCEO
Collector-emitter voltage
Open base
150
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
12
A
ICM
Collector current-peak
15
A
PC
Collector power dissipation
100
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SD551
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=50mA ;IB=0
150
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
5
V
Collector-emitter saturation voltage
IC=5A; IB=0.5A
2.5
V
VBE
Base-emitter on voltage
IC=1A ; VCE=5V
1.5
V
ICBO
Collector cut-off current
VCB=150V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.1
mA
hFE-1
DC current gain
IC=1A ; VCE=5V
40
hFE-2
DC current gain
IC=6A ; VCE=5V
20
COB
Collector output capacitance
IE=0; VCB=10V;f=1MHz
250
pF
Transition frequency
IC=1A ; VCE=5V
15
MHz
VCEsat
fT
CONDITIONS
hFE Classifications
O
R
40-80
70-140
2
MIN
TYP.
MAX
UNIT
140
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
2SD551