SavantIC Semiconductor Product Specification 2SC1161 Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·Low collector saturation voltage APPLICATIONS ·For low frequency high voltage power amplifier TV vertical deflection output applications. PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=? ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Collector-emitter voltage Open base 120 V VEBO Emitter-base voltage Open collector 6 V 1 A 15 W IC Collector current PD Total power dissipation Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? TC=25? SavantIC Semiconductor Product Specification 2SC1161 Silicon NPN Power Transistors CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 120 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 6 V VCEsat Collector-emitter saturation voltage IC=500mA; IB=50mA 1.5 V VBE sat Base-emitter saturation voltage IC=500mA; IB=50mA 2.0 V ICBO Collector cut-off current VCB=120V; IE=0 1.0 µA IEBO Emitter cut-off current VEB=6V; IC=0 1.0 µA hFE DC current gain IC=200mA ; VCE=5V 30 Transition frequency IC=200mA ; VCE=10V 5 fT CONDITIONS 2 MIN TYP. MAX UNIT 200 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 2SC1161