SAVANTIC 2SA483

SavantIC Semiconductor
Product Specification
2SA483
Silicon PNP Power Transistors
DESCRIPTION
·With TO-66 package
·Complement to type 2SC783
·High voltage: VCEO=-150V(min)
APPLICATIONS
·Power amplifier applications
·Vertical output applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-150
V
VCEO
Collector-emitter voltage
Open base
-150
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-1.5
A
IE
Emitter current
1.5
A
PC
Collector power dissipation
20
W
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150
TC=25
SavantIC Semiconductor
Product Specification
2SA483
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA ;IB=0
-150
V
V(BR)CBO
Collector-base breakdown voltage
IC=-0.5mA ;IE=0
-150
V
VCEsat
Collector-emitter saturation voltage
IC=-0.5A; IB=-50mA
-1.8
V
VBE
Base-emitter on voltage
IC=-0.5A ; VCE=-10V
-1.8
V
ICBO
Collector cut-off current
VCB=-150V; IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-0.1
mA
hFE
DC current gain
IC=-0.1A ; VCE=-10V
COB
Output capacitance
IE=0 ; VCB=-10V;f=1.0MHz
50
pF
fT
Transition frequency
IC=-0.1A ; VCE=-10V
10
MHz
hFE Classifications
R
O
Y
30-80
70-140
120-240
2
MIN
TYP.
30
MAX
UNIT
240
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3
2SA483