SavantIC Semiconductor Product Specification 2SC1367 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Wide area of safe operation APPLICATIONS ·For TV horizontal deflection output applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1000 V VCEO Collector-emitter voltage Open base 600 V VEBO Emitter-base voltage Open collector 5 V 1 A 50 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SC1367 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 V(BR)EBO Emitter-base breakdown votage IE=1mA; IC=0 VCEsat Collector-emitter saturation voltage IC=0.5 A;IB=0.1 A 5.0 V VBEsat Base-emitter saturation voltage IC=0.5 A;IB=0.1 A 1.5 V ICBO Collector cut-off current VCB=1000V;IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE DC current gain IC=0.2A ; VCE=10V Transition frequency IC=0.1A ; VCE=10V fT CONDITIONS 2 MIN TYP. MAX UNIT 600 V 5 V 30 120 6 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SC1367