SAVANTIC 2SC1618

SavantIC Semiconductor
Product Specification
2SC1618
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High current capacity
·Wide safe oprating area
·
APPLICATIONS
·For audio frequency output applications
PINNING(see fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
80
V
VCEO
Collector-emitter voltage
Open base
60
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
6
A
ICM
Collector current-peak
10
A
PC
Collector power dissipation
50
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SC1618
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA; IB=0
60
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA; IC=0
6
V
VCEsat
Collector-emitter saturation voltage
IC=4A;IB=0.4 A
2.0
V
VBEsat
Base-emitter saturation voltage
IC=4A;IB=0.4 A
2.5
V
ICBO
Collector cut-off current
VCB=80V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=6V; IC=0
0.1
mA
hFE
DC current gain
IC=3A ; VCE=4V
Transition frequency
IC=0.5A ; VCE=12V
fT
CONDITIONS
2
MIN
TYP.
20
MAX
UNIT
180
10
MHz
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SC1618