SavantIC Semiconductor Product Specification 2SC3461 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High breakdown voltage and high reliability. ·Fast switching speed ·Wide ASO(Safe Operating Area) APPLICATIONS ·800V/8A switching regulator applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1100 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 8 A ICM Collector current-peak 25 A IB Base current 4 A PC Collector power dissipation 140 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SC3461 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;RBE=< 800 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 1100 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7 V VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.8A 2.0 V VBEsat Base-emitter saturation voltage IC=4A; IB=0.8A 1.5 V ICBO Collector cut-off current VCB=800V; IE=0 10 µA IEBO Emitter cut-off current VEB=5V; IC=0 10 µA hFE-1 DC current gain IC=0.6A ; VCE=5V 10 hFE-2 DC current gain IC=3A ; VCE=5V 8 Cob Output capacitance IE=0 ; VCB=10V;f=1MHz 155 pF fT Transition frequency IC=0.6A ; VCE=10V 15 MHz 40 Switching times ton Turn-on time tstg Storage time tf IC=6A;RL=66.7C IB1=1.2A; IB2=-2.4A VCC=400V Fall time hFE-1 Classifications K L M 10-20 15-30 20-40 2 0.5 µs 3.0 µs 0.3 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 2SC3461 SavantIC Semiconductor Product Specification 2SC3461 Silicon NPN Power Transistors 4