SAVANTIC 2SC4429

SavantIC Semiconductor
Product Specification
2SC4429
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PML package
·High breakdown voltage, high reliability.
·Fast switching speed.
·Wide area of safe operation
APPLICATIONS
·Switching regulator applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Aabsolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1100
V
VCEO
Collector-emitter voltage
Open base
800
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
8
A
ICM
Collector current-peak
25
A
IB
Base current
4
A
PC
Collector power dissipation
TC=25
60
W
3
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SC4429
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CBO
Collector-base breakdown voltage
IC=1mA; IE=0
1100
V
V(BR)CEO
Collector-emitter breakdown voltage
IC=5mA; RBE==
800
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA; IC=0
7
V
VCEsat
Collector-emitter saturation voltage
IC=4A;IB=0.8A
2.0
V
VBEsat
Base-emitter saturation voltage
IC=4A;IB=0.8A
1.5
V
ICBO
Collector cut-off current
VCB=800V; IE=0
10
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
µA
hFE-1
DC current gain
IC=0.6A ; VCE=5V
10
hFE-2
DC current gain
IC=3A ; VCE=5V
8
fT
Transition frequency
IC=0.6A ; VCE=10V
15
MHz
COB
Output capacitance
VCB=10V;f=1MHz
155
pF
40
Switching times
ton
tstg
tf
Turn-on time
IC=6A;RL=66.7B
IB1=1.2A;- IB2=2.4A
VCC=400V
Storage time
Fall time
hFE-1 classifications
K
L
M
10-20
15-30
20-40
2
0.5
µs
3.0
µs
0.3
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SC4429
SavantIC Semiconductor
Product Specification
2SC4429
Silicon NPN Power Transistors
4