SavantIC Semiconductor Product Specification 2SC3858 Silicon NPN Power Transistors DESCRIPTION ·With MT-200 package ·Complement to type 2SA1494 APPLICATIONS ·Audio and general purpose PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (MT-200) and symbol Absolute maximum ratings (Ta=25°C) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Collector-emitter voltage Open base 200 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 17 A IB Base current 5 A PC Collector power dissipation 200 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SC3858 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0 VCEsat Collector-emitter saturation voltage IC=10 A;IB=1 A 2.5 V ICBO Collector cut-off current VCB=200V; IE=0 100 µA IEBO Emitter cut-off current VEB=6V; IC=0 100 µA hFE DC current gain IC=8A ; VCE=4V fT Transition frequency IC=1A ; VCE=12V 20 MHz COB Output capacitance IE=0; VCB=10V;f=1MHz 300 pF 0.50 µs 1.80 µs 0.60 µs 200 UNIT V 50 180 Switching times ton Turn-on time ts Storage time tf Fall time IC=10A;RL=4A IB1=- IB2=1A VCC=40V hFE classifications Y P G 50-100 70-140 90-180 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SC3858 SavantIC Semiconductor Product Specification 2SC3858 Silicon NPN Power Transistors 4