SavantIC Semiconductor Product Specification 2SD2401 Silicon NPN Power Transistors DESCRIPTION ·With MT-200 package ·Complement to type 2SB1570 ·DARLINGTON APPLICATIONS ·Audio, series regulator and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (MT-200) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 160 V VCEO Collector-emitter voltage Open base 150 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 12 A IB Base current 1 A PC Collector power dissipation 150 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SD2401 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=30mA; IB=0 VCEsat Collector-emitter saturation voltage IC=7 A;IB=7m A 2.5 V VBEsat Base-emitter saturation voltage IC=7 A;IB=7m A 3.0 V ICBO Collector cut-off current VCB=160V; IE=0 100 µA IEBO Emitter cut-off current VEB=5V; IC=0 100 µA hFE DC current gain IC=7A ; VCE=4V fT Transition frequency IC=2A ; VCE=12V 55 MHz COB Output capacitance IE=0; VCB=10V;f=1MHz 95 pF 0.5 µs 10.0 µs 1.1 µs 150 UNIT V 5000 Switching times ton Turn-on time ts Storage time tf Fall time IC=7A;RL=10C IB1=- IB2=7mA VCC=70V hFE classifications O P Y 5000-12000 6500-20000 15000-30000 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SD2401