SavantIC Semiconductor Product Specification 2SD845 Silicon NPN Power Transistors DESCRIPTION ·With MT-200 package ·Complement to type 2SB755 ·High transition frequency ·High breakdown voltage :VCEO=150V(min) APPLICATIONS ·For power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (MT-200) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage Open base 150 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 12 A IB Base current 1.2 A PC Collector power dissipation 120 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SD845 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=0.1A; IB=0 150 V V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0 5 V Collector-emitter saturation voltage IC=5 A;IB=0.5 A 2.0 V VBE Base-emitter on voltage IC=5A ; VCE=5V 1.5 V ICBO Collector cut-off current VCB=150V; IE=0 -50 µA IEBO Emitter cut-off current VEB=5V; IC=0 -50 µA hFE DC current gain IC=1A ; VCE=5V Transition frequency IC=1A ; VCE=10V VCEsat fT CONDITIONS hFE classifications R O 55-110 80-160 2 MIN TYP. 55 MAX UNIT 160 20 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SD845