SECOS BAP64-05

BAP64-05
Small Signal General Purpose Pin Diode
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-23
FEATURES
z
z
z
z
z
z
z
Low diode capacitance
Low diode forward resistance
Low series inductance
High voltage, current controlled
RF resistor for RF attenuators and switches
For applications up to 3 GHz
RF attenuators and switches
A
3
1
1
K
2
E
2
D
PACKAGING INFORMATION
F
Weight: 0.0078 g (Approximate)
1
A
B
C
D
E
F
2
H
G
REF.
5K
C B
Top View
3
MARKING CODE
L
3
Millimeter
Min.
Max.
2.80
3.04
2.10
2.55
1.20
1.40
0.89
1.15
1.80
2.00
0.30
0.50
REF.
G
H
J
K
L
J
Millimeter
Min.
Max.
0.09
0.18
0.45
0.60
0.08
0.177
0.6 REF.
0.89
1.02
MAXIMUM RATINGS (at Ta = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Continuous Reverse Voltage
VR
175
V
Continuous Forward Current
IF
100
mA
Power Dissipation
PD
250
mW
TJ, TSTG
150, -65 ~ +150
°C
Junction, Storage Temperature
Unit
ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Forward Voltage
VF
-
-
1.1
V
IF = 50 mA
Reverse Voltage Leakage Current
IR
-
-
μA
VR = 175 V
VR = 20 V
-
0.52
Parameters
Diode Capacitance
Diode Forward Resistance
CD
rD
10
1
-
-
0.37
-
-
0.23
0.35
-
20
40
-
10
20
-
2
3.8
-
0.7
1.35
VR = 0, f = 1 MHz
pF
VR = 20 V, f = 1 MHz
Ω
tL
-
1.55
-
μS
Series Inductance
LS
-
1.4
-
nH
01-Jun-2005 Rev. A
VR = 1 V, f = 1 MHz
IF = 0.5 mA, f = 100 MHz
Charge Carrier Life Time
http://www.SeCoSGmbH.com/
Test Conditions
IF = 1 mA, f = 100 MHz
IF = 10 mA, f = 100 MHz
IF = 100 mA, f = 100 MHz
When switched from
IF = 10 mA to IR = 6 mA;
RL = 100 Ω;
measured at IR =3mA
Any changes of specification will not be informed individually.
Page 1 of 2
BAP64-05
Elektronische Bauelemente
Small Signal General Purpose Pin Diode
RATINGS AND CHARACTERISTIC CURVES
BAP64-05
http://www.SeCoSGmbH.com/
01-Jun-2005 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 2