BAP64-05 Small Signal General Purpose Pin Diode Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES z z z z z z z Low diode capacitance Low diode forward resistance Low series inductance High voltage, current controlled RF resistor for RF attenuators and switches For applications up to 3 GHz RF attenuators and switches A 3 1 1 K 2 E 2 D PACKAGING INFORMATION F Weight: 0.0078 g (Approximate) 1 A B C D E F 2 H G REF. 5K C B Top View 3 MARKING CODE L 3 Millimeter Min. Max. 2.80 3.04 2.10 2.55 1.20 1.40 0.89 1.15 1.80 2.00 0.30 0.50 REF. G H J K L J Millimeter Min. Max. 0.09 0.18 0.45 0.60 0.08 0.177 0.6 REF. 0.89 1.02 MAXIMUM RATINGS (at Ta = 25°C unless otherwise specified) Parameter Symbol Ratings Continuous Reverse Voltage VR 175 V Continuous Forward Current IF 100 mA Power Dissipation PD 250 mW TJ, TSTG 150, -65 ~ +150 °C Junction, Storage Temperature Unit ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified) Symbol Min. Typ. Max. Unit Forward Voltage VF - - 1.1 V IF = 50 mA Reverse Voltage Leakage Current IR - - μA VR = 175 V VR = 20 V - 0.52 Parameters Diode Capacitance Diode Forward Resistance CD rD 10 1 - - 0.37 - - 0.23 0.35 - 20 40 - 10 20 - 2 3.8 - 0.7 1.35 VR = 0, f = 1 MHz pF VR = 20 V, f = 1 MHz Ω tL - 1.55 - μS Series Inductance LS - 1.4 - nH 01-Jun-2005 Rev. A VR = 1 V, f = 1 MHz IF = 0.5 mA, f = 100 MHz Charge Carrier Life Time http://www.SeCoSGmbH.com/ Test Conditions IF = 1 mA, f = 100 MHz IF = 10 mA, f = 100 MHz IF = 100 mA, f = 100 MHz When switched from IF = 10 mA to IR = 6 mA; RL = 100 Ω; measured at IR =3mA Any changes of specification will not be informed individually. Page 1 of 2 BAP64-05 Elektronische Bauelemente Small Signal General Purpose Pin Diode RATINGS AND CHARACTERISTIC CURVES BAP64-05 http://www.SeCoSGmbH.com/ 01-Jun-2005 Rev. A Any changes of specification will not be informed individually. Page 2 of 2