BAP64-05W PIN DIODES FEATURES SOT-323 z High voltage, current controlled z RF resistor for RF attenuators and switches z Low diode capacitance z Low diode forward resistance z Low series inductance z For applications up to 3 GHz z RF attenuators and switches Marking: 5W Maximum Ratings @TA=25℃ Parameter Symbol Limits Unit Continuous reverse voltage VR 175 V Continuous Forward Current IF 100 mA Power Dissipation PD 200 mW RθJA 625 ℃/W Junction temperature Tj 150 ℃ Storage temperature TSTG -65~+150 ℃ Thermal Resistance Junction to Ambient ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Reverse voltage leakage current IR Forward voltage VF Diode capacitance Diode forward resistance Cd rD Test conditions MIN TYP MAX VR=175V 10 VR=20V 1 IF=50mA 1.1 VR=0, f=1MHz 0.52 VR=1V, f=1MHz 0.37 VR=20V, f=1MHz 0.23 0.35 IF=0.5mA, f=100MHz;note1 20 40 IF=1mA, f=100MHz ;note1 10 20 IF=10mA, f=100MHz;note1 2 3.8 IF=100mA, f=100MHz;note1 0.7 1.35 UNIT µA V pF Ω when switched from Charge carrier life time τL IF = 10 mA to IR = 6 mA; RL = 1.55 μS 100 Ω; measured at IR =3mA Series inductance LS IF=100mA, f=100MHz Note 1. Guaranteed on AQL basis: inspection level S4,AQL 1.0. １ JinYu semiconductor www.htsemi.com 1.4 nH BAP64-05W ２ JinYu semiconductor www.htsemi.com