SECOS GBJ801

GBJ8005
THRU
GBJ810
VOLTAGE -50V ~ 1000V
-8 .0 AMP Glass Passivated Bridge Rectifiers
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen-free.
4.6 ± 0.2
3.6 ± 0.2
4 ± 0.2
*
* Ldeal For Printed Circuit Board
Reliable Low Cost Construction Utilizing Molded
* Plastic
Technique Results In Inexpensive Product
5
+
2.5 ± 0.2
Low Forward voltage Drop, High Current Capability
2.2 ± 0.2
1± 0.1
Plastic Material Has Underw rites Laboratory
* Flammability
Classification 94V-0
7.5
3.2 ± 0.2
3.5 ± 0.2
17.5 ± 0.5
FEATURES
11± 0.2
20 ± 0.3
30 ± 0.3
0.7 ± 0.1
7.5
2.7 ± 0.2
10 ± 0.2 ± 0.2 ± 0.2
* Rating To 1000V PRV
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
o
Rating 25 C ambient temperature unless otherwise specified.
Resistive or inductive load, 60Hz,
For capacitive load, derate current by 20%.
TYPE NUMBER
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward (with heatsink Note2)
Rectified Current @ TC=100 (without heatsink)
Peak Forward Surge Current, 8.3 ms single
half Sine-wave superimposed
on rated load (JEDEC method)
Maximum Forward Voltage at 4.0A
o
Maximum DC Reverse Current Ta=25 C
o
at Rated DC Blocking Voltage Ta=125 C
I2t Rating for fusing (t<8.3ms)
Typical Junction Capacitance
per element (Note1)
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
VRRM
VRMS
VDC
I(AV)
GBJ
8005
50
35
50
GBJ
801
100
70
100
GBJ
802
200
140
200
GBJ
804
400
280
400
8.0
2.9
GBJ
806
600
420
600
GBJ
808
800
560
800
GBJ
810
UNITS
1000
700
1000
V
V
V
A
IFSM
170
A
VF
1.10
5.0
500
120
0
µA
IR
I2t
CJ
55
RθJC
TJ
TSTG
1.8
- 55 ~ + 150
- 55 ~ + 150
V
A2S
pF
o
Co / W
C
o
C
NOTES:
1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Device mounted on 75mm x 75mm x 1.6mm Cu Plate Heatsink.
ht t p:/ /www. SeCoSGmbH. com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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