SCS521DS 0.1 A, 30 V Silicon Epitaxial Planar Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION ● Silicon epitaxial planar Schottky barrier Diodes ● Small surface mounting type ● High reliability WBFBP02C APPLICATION ● High speed switching For Detection ● For portable equipment: L C (i.e. Mobile phone, MP3, MD,CD-ROM, D J M DVD-ROM, Note book PC, etc.) B 1 K A Anode M G E F 2 Cathode H 1 2 PACKAGE INFORMATION REF. Weight: 0.0123 g (approximately) A B C D E F MARKING CODE F +Anode Cathode - Millimeter Min. Max. 0.950 1.050 0.550 0.650 0.450 0.550 0.450 REF. 0.400 REF. 0.275 0.325 REF. G H J K L M Millimeter Min. Max. 0.275 0.325 0.275 0.325 0.275 0.325 0.675 0.725 0.010 0.070 0.010 REF. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Single diode at TA = 25°C) Parameter Symbol Limits Unit DC Reverse Voltage VR 30 V Mean Rectifying Current IO 100 mA Peak Forward Surge Current Junction, Storage Temperature IFSM 1.0 A TJ, TSTG +125, -40 ~ +125 ℃ ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise specified) Symbol Min. Typ. Max. Unit Forward Voltage Parameters VF - - 0.35 V IF = 10mA Reverse Current IR - - 10 uA VR = 10V 01-June-2008 Rev. A Test Conditions Page 1 of 2 SCS521DS Elektronische Bauelemente 0.1 A, 30 V Silicon Epitaxial Planar Schottky Barrier Rectifiers RATINGS AND CHARACTERISTIC CURVES 01-June-2008 Rev. A Page 2 of 2