SCS520DS 0.1 A, 30 V Silicon Epitaxial Planar Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION ● Silicon epitaxial planar Schottky barrier Diodes ● Small surface mounting type ● High reliability ● Low reverse current and low forward voltage DFNWB APPLICATION ● High speed switching For Detection ● For portable equipment: (i.e. Mobile phone, MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) 1 2 Anode Cathode PACKAGE INFORMATION REF. Weight: 0.0123 g (approximately) MARKING CODE E Cathode - A B C D Millimeter Min. Max. 0.55 0.65 0.95 1.050.4 0.5 0 0.05 REF. E F G H Millimeter Min. Max. 0.15 0.35 0.05REF 0.4 0.6 0.65TYP +Anode MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Single diode at TA = 25°C) Parameter DC Reverse Voltage Mean Rectifying Current Peak Forward Surge Current Junction, Storage Temperature Symbol Limits Unit VR 30 V IO 100 mA IFSM 500 mA TJ, TSTG +125, -40 ~ +125 ℃ ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise specified) Symbol Min. Typ. Max. Unit Forward Voltage Parameters VF - - 0.45 V IF = 10mA Reverse Current IR - - 0.5 uA VR = 10V 11-Nov-2009 Rev. B Test Conditions Page 1 of 2 SCS520DS Elektronische Bauelemente 0.1 A, 30 V Silicon Epitaxial Planar Schottky Barrier Rectifiers RATINGS AND CHARACTERISTIC CURVES 11-Nov-2009 Rev. B Page 2 of 2