MICROSEMI 2N4150S

TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/394
Devices
Qualified Level
2N4150
2N4150S
2N5237
2N5237S
JAN
JANTX
JANTXV
2N5238
2N5238S
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ TA = +250C(1)
@ TC = +1000C(2)
Operating & Storage Junction Temp. Range
2N4150 2N5237 2N5238
Symbol 2N4150S 2N5237S 2N5238S Unit
VCEO
VCBO
VEBO
IC
70
100
PT
TJ, Tstg
120
150
10
10
1.0
5.0
-65 to +200
170
200
Vdc
Vdc
Vdc
Adc
TO- 5*
2N4150, 2N5237,
2N5238
W
0
C
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
Junction-to-Ambient
1)
2)
Symbol
RθJC
RθJA
Max.
0.020
Unit
0
0.175
C/mW
Derate linearly @ 5.7 mW/0C for TA > +250C
Derate linearly @ 50 mW/0C for TC > +250C
TO-39*
(TO-205AD)
2N4150S, 2N5237S,
2N5238S
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
V(BR)EBO
7.0
Vdc
2N4150, 2N4150S
2N5237, 2N5237S
2N5238, 2N5238S
V(BR)CEO
70
120
170
Vdc
2N4150, 2N4150S
2N5237, 2N5237S
2N5238, 2N5238S
ICEX
OFF CHARACTERISTICS
Emitter-Base Breakdown Voltage
IE = 10 µAdc
Collector-Emitter Breakdown Voltage
IC = 0.1 Adc
Collector-Emitter Cutoff Current
VEB = 0.5 Vdc, VCE = 60 Vdc
VEB = 0.5 Vdc, VCE = 110 Vdc
VEB = 0.5 Vdc, VCE = 160 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
10
10
10
µAdc
120101
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2N4150, 2N4150S, 2N5237, 2N5237S, 2N5238, 2N5238S JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
OFF CHARACTERISTICS (con’t)
Collector-Base Cutoff Current
VCE = 60 Vdc
VCE = 110 Vdc
VCE = 160 Vdc
Emitter-Base Cutoff Current
VBE = 7.0 Vdc
VBE = 5.0 Vdc
Collector-Base Cutoff Current
VCB = 100 Vdc
VCB = 150 Vdc
VCB = 200 Vdc
VCB = 80 Vdc
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 1.0 Adc, VCE = 5.0 Vdc
Symbol
2N4150, 2N4150S
2N5237, 2N5237S
2N5238, 2N5238S
2N4150, 2N4150S
2N5237, 2N5237S
2N5238, 2N5238S
All Types
2N4150, 2N4150S
2N5237, 2N5237S
2N5238, 2N5238S
All Types
All Types
IC = 5.0 Adc, VCE = 5.0 Vdc
IC = 10 Adc, VCE = 5.0 Vdc
Collector-Emitter Saturation Voltage
IC = 5.0 Adc, IB = 0.5 Adc
IC = 10 Adc, IB = 1.0 Adc
Base-Emitter Saturation Voltage
IC = 5.0 Adc, IB = 0.5 Adc
IC = 10 Adc, IB = 1.0 Adc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 0.2 Adc, VCE = 10 Vdc, f = 10 MHz
Forward Current Transfer Ratio
IC = 50 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz 2N4150, 2N4150S
2N5237, 2N5237S
2N5238, 2N5238S
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
SWITCHING CHARACTERISTICS
Delay Time
VCC = 20 Vdc, VBB = 5.0 Vdc,
Rise Time
IC = 5.0 Adc, IB1 = 0.5 Adc
Storage Time
VCC = 20 Vdc, VBB = 5.0 Vdc,
Fall Time
IC = 5.0 Adc, IB1 = -IB2 = 0.5 Adc
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t = 1.0 s
Test 1
VCE = 40 Vdc, IC = 0.22 Adc
Test 2
VCE = 70 Vdc, IC = 90 mAdc
Test 3
VCE = 120 Vdc, IC = 15 mAdc
2N5237, 2N5237S
VCE = 170 Vdc, IC = 3.5 mAdc
2N5238, 2N5238S
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Max.
Unit
ICEO
10
10
10
µAdc
IEBO
10
0.1
µAdc
ICBO
10
10
10
0.1
hFE
Min.
50
50
50
40
10
µAdc
200
225
225
120
-
VCE(sat)
0.6
2.5
Vdc
VBE(sat)
1.5
25
Vdc
hfe
1.5
7.5
hfe
40
40
40
160
160
250
Cobo
t
d
r
t
s
t
f
t
350
pF
50
500
1.5
500
µs
µs
µs
µs
120101
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