1N4149...1N4454 SILICON EPITAXIAL PLANAR DIODES for general purpose and switching Max. 0.5 Max. 0.45 Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. Black "ST" Brand Min. 27.5 Max. 1.9 Black Cathode Band XXX Black Part No. Max. 3.9 ST XXX Min. 27.5 Max. 2.9 Min. 27.5 Glass Case DO-34 Dimensions in mm Glass Case DO-35 Dimensions in mm Absolute Maximum Ratings and Characteristics (Ta = 25 OC unless otherwise specified.) Type Peak Reverse Voltage Max. Average Rectified Current VRM (V) IO (mA) 2) Max. Max. Power Dissipation Junction Temp. at 25 OC Ptot (mW) 2) Max. Forward Voltage Max. Reverse Current Max. Reverse Recovery Time Tj (OC) VF (V) at IF (mA) IR (nA) at VR (V) trr (ns) Conditions 100 150 500 200 1 10 25 20 4 IF = 10 mA, VR = 6 V, RL = 100 Ω, to IR = 1 mA 1N4151 75 150 500 200 1 50 50 50 2 IF = 10 mA, VR = 6 V, RL = 100 Ω, to IR = 1 mA 1N4152 40 150 400 175 0.55 0.1 50 30 2 IF = 10 mA, VR = 6 V, RL = 100 Ω, to IR = 1 mA 1N4154 35 150 500 200 1 30 100 25 2 IF = 10 mA, VR = 6V, RL = 100 Ω, to IR = 1 mA 1N4149 1) 1N4447 1) 100 150 500 200 1 20 25 20 4 IF = 10 mA, VR = 6 V, RL = 100 Ω, to IR = 1 mA 1N4449 1) 100 150 500 200 1 30 25 20 4 IF = 10 mA, VR = 6 V, RL = 100 Ω, to IR = 1 mA 1N4450 40 150 400 175 0.54 0.5 50 30 4 IF = IR = 10 mA , to IR = 1 mA 1N4451 40 150 400 175 0.5 0.1 50 30 10 IF = IR = 10 mA , to IR = 1 mA 1N4453 30 150 400 175 0.55 0.01 50 20 - - 1N4454 75 150 400 175 1 10 100 50 4 IF = IR = 10 mA , to IR = 1 mA 1) 2) These diodes are also available in glass case DO-34. Parameter for diodes in case DO-34: Ptot = 300 mW, Tj = 175 OC Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature. SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/06/2007