1N4148M SILICON EPITAXIAL PLANAR DIODE Fast switching diode Max. 0.45 Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. XXX Max. 2.9 Min. 27.5 Glass Case DO-34 Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Reverse Voltage VR 50 V Peak Reverse Voltage VRM 60 V IO 130 mA Surge Forward Current at t < 1 s IFSM 500 mA Power Dissipation Ptot Rectified Current (Average), Half Wave Rectification with Resist. Load at f ≥ 50 Hz 400 1) mW Junction Temperature Tj 200 O Storage Temperature Range TS - 65 to + 200 O 1) C C Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature. Characteristics at Tj = 25 OC Parameter Symbol Min. Max. Unit Forward Voltage at IF = 100 mA VF - 1.1 V Reverse Leakage Current at VR = 50 V IR - 0.5 μA V(BR)R 60 - V Ctot - 3 pF trr - 4 ns Reverse Breakdown Voltage tested with 100 µA Pulses Capacitance at VF = VR = 0 Reverse Recovery Time from IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Ω SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 23/06/2007 1N4148M Dynamic forward resistance versus forward current Forward characteristics 10 1N 4148M 1N 4148M 3 10 4 Tj=25 oC f=1KHz 5 2 10 2 o Tj=100 C iF 10 3 o Tj=25 C rf 10 5 2 10 2 5 1 2 10 10 -1 5 2 10 -2 0 1 2V 1 10 -1 10 -2 1 10 2 mA 10 VF IF Admissible power dissipation versus ambient temperature Relative capacitance versus reverse voltage Valid provided that electrodes are kept at ambient temperature mW 1000 1N 4148M Tj=25 oC f=1MHz 900 1.1 800 P tot 1N 4148M Ctot(VR ) Ctot(0V) 700 1.0 600 500 0.9 400 300 0.8 200 0.7 100 0 0 200 oC 100 0 0 Tamb 2 4 6 8 10 V VR SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 23/06/2007