1SS369 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE Features • Low forward voltage • Low reverse current PINNING DESCRIPTION PIN Applications • High Speed Switching 1 Cathode 2 Anode 2 1 SU Top View Marking Code: "SU" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Maximum (Peak) Reverse Voltage VRM 45 V Reverse Voltage VR 40 V Average Forward Current IO 100 mA Maximum (Peak) Forward Current IFM 300 mA Surge Forward Current (10 ms) IFSM 1 A Power Dissipation Ptot 150 mW Junction Temperature TJ 125 O Topr - 40 to + 100 O Ts - 55 to + 125 O Symbol Max. Unit Forward Voltage at IF = 100 mA VF 0.6 V Reverse Current at VR = 40 V IR 5 µA Total Capacitance at f = 1 MHz CT 25 pF Operating Temperature Range Storage Temperature Range C C C Characteristics at Ta = 25 OC Parameter SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 01/09/2006 1SS369 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 01/09/2006 1SS369 PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-323 A c HE A D E bp UNIT A bp C D E HE mm 1.10 0.80 0.40 0.25 0.15 0.00 1.80 1.60 1.35 1.15 2.80 2.30 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 01/09/2006