1SS77WS SILICON EPITAXIAL PLANAR BAND SWITCHING DIODE For band switching application PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 PN Top View Marking Code: "PN" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Reverse Voltage VR 35 V Forward Current IF 100 mA Topr - 25 to + 85 O Ts - 55 to + 150 O Symbol Max. Unit VF 1 V IR 0.1 µA CD 1.2 pF rf 0.85 Ω Operating Ambient Temperature 1) Storage Temperature Range 1) C C Maximum ambient temperature during operation Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 100 mA Reverse Current at VR = 33 V Diode Capacitance at VR = 6 V, f = 1 MHz Forward Dynamic Resistance at IF = 2 mA, f = 100 MHz SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 01/09/2006 1SS77WS SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 01/09/2006 1SS77WS PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-323 A c HE A D E bp UNIT A bp C D E HE mm 1.10 0.80 0.40 0.25 0.15 0.00 1.80 1.60 1.35 1.15 2.80 2.30 SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 01/09/2006