HSC226 SILICON SCHOTTKY BARRIER DIODE Features • Low reverse current, low capacitance • Ultra small flat package is suitable for surface mount design PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 W Top View Marking Code: "W" Simplified outline SOD-523 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit VRRM 25 V IF 50 mA IFSM 200 mA Junction Temperature Range Tj 125 O Storage Temperature Range Ts - 55 to + 125 O Symbol Max. Unit Forward Voltage at IF = 1 mA at IF = 5 mA VF 0.33 0.38 V Reverse Current at VR = 20 V IR 0.45 µA Capacitance at VR = 1 V, f = 1 MHz C 2.8 pF Repetitive Peak Reverse Voltage Forward Current Non-Repetitive Peak Forward Surge Current C C Characteristics at Ta = 25 OC Parameter SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 23/11/2006 HSC226 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 23/11/2006 HSC226 PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-523 ALL ROUND C A ∠ HE D E bp A UNIT A bp C D E HE V mm 0.70 0.60 0.4 0.3 0.135 0.127 1.25 1.15 0.85 0.75 1.7 1.5 0.1 ∠ 5 O SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 23/11/2006