SEMTECH_ELEC HSC226

HSC226
SILICON SCHOTTKY BARRIER DIODE
Features
• Low reverse current, low capacitance
• Ultra small flat package is suitable for surface
mount design
PINNING
DESCRIPTION
PIN
1
Cathode
2
Anode
2
1
W
Top View
Marking Code: "W"
Simplified outline SOD-523 and symbol
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
VRRM
25
V
IF
50
mA
IFSM
200
mA
Junction Temperature Range
Tj
125
O
Storage Temperature Range
Ts
- 55 to + 125
O
Symbol
Max.
Unit
Forward Voltage
at IF = 1 mA
at IF = 5 mA
VF
0.33
0.38
V
Reverse Current
at VR = 20 V
IR
0.45
µA
Capacitance
at VR = 1 V, f = 1 MHz
C
2.8
pF
Repetitive Peak Reverse Voltage
Forward Current
Non-Repetitive Peak Forward Surge Current
C
C
Characteristics at Ta = 25 OC
Parameter
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/11/2006
HSC226
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/11/2006
HSC226
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD-523
ALL ROUND
C
A
∠
HE
D
E
bp
A
UNIT
A
bp
C
D
E
HE
V
mm
0.70
0.60
0.4
0.3
0.135
0.127
1.25
1.15
0.85
0.75
1.7
1.5
0.1
∠
5
O
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/11/2006