RB521S-40 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE for rectifying small power applications Features • Ultra small mold type • Low forward voltage • High reliability PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 Z Top View Marking Code: "Z" Simplified outline SOD-523 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Repetitive Peak Reverse Voltage VRM 45 V Reverse Voltage VR 40 V Mean Rectifying Current IO 200 mA IFSM 1 A Junction Temperature Tj 150 O Storage Temperature Range Ts - 55 to + 150 O Peak Forward Surge Current (60Hz for Cyc.) C C Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Forward Voltage at IF = 10 mA at IF = 100 mA at IF = 200 mA VF 0.16 0.31 0.41 0.3 0.45 0.54 Reverse Current at VR = 10 V at VR = 40 V IR - 20 90 SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 30/01/2007 Unit V μA RB521S-40 SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 30/01/2007 RB521S-40 PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-523 ALL ROUND C A ∠ HE D E bp A UNIT A bp C D E HE V mm 0.70 0.60 0.4 0.3 0.135 0.127 1.25 1.15 0.85 0.75 1.7 1.5 0.1 ∠ 5 O SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 30/01/2007