SEMTECH_ELEC SD784WS

SD784WS
SILICON SCHOTTKY BARRIER DIODE
Applications
• Low voltage high speed switching
PINNING
DESCRIPTION
PIN
1
Cathode
2
Anode
2
1
MD
Top View
Marking Code: "MD"
Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Peak Reverse Voltage
VRM
30
V
Reverse Voltage
VR
30
V
Average Forward Current
IO
100
mA
Peak Forward Current
IFM
300
mA
Peak Forward Surge Current
IFSM
1
A
Power Dissipation
PD
Junction Temperature Range
Tj
125
O
Storage Temperature Range
Ts
- 55 to + 125
O
1)
200
1)
mW
C
C
Mounted on a glass epoxy circuit of board of 20 X 20 mm, pad dimension of 4 X 4 mm.
Characteristics at Ta = 25 OC
Parameter
Symbol
Typ.
Max.
-
0.35
0.4
0.55
Unit
Forward Voltage
at IF = 1 mA
at IF = 5 mA
at IF = 100 mA
VF
Reverse Current
at VR = 30 V
IR
-
15
µA
Total Capacitance
at VR = 1 V, f = 1 MHz
CT
40
-
pF
V
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 01/09/2006
SD784WS
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 01/09/2006
SD784WS
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD-323
A
c
HE
A
D
E
bp
UNIT
A
bp
C
D
E
HE
mm
1.10
0.80
0.40
0.25
0.15
0.00
1.80
1.60
1.35
1.15
2.80
2.30
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 01/09/2006