SD784WS SILICON SCHOTTKY BARRIER DIODE Applications • Low voltage high speed switching PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 MD Top View Marking Code: "MD" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Peak Reverse Voltage VRM 30 V Reverse Voltage VR 30 V Average Forward Current IO 100 mA Peak Forward Current IFM 300 mA Peak Forward Surge Current IFSM 1 A Power Dissipation PD Junction Temperature Range Tj 125 O Storage Temperature Range Ts - 55 to + 125 O 1) 200 1) mW C C Mounted on a glass epoxy circuit of board of 20 X 20 mm, pad dimension of 4 X 4 mm. Characteristics at Ta = 25 OC Parameter Symbol Typ. Max. - 0.35 0.4 0.55 Unit Forward Voltage at IF = 1 mA at IF = 5 mA at IF = 100 mA VF Reverse Current at VR = 30 V IR - 15 µA Total Capacitance at VR = 1 V, f = 1 MHz CT 40 - pF V SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 01/09/2006 SD784WS SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 01/09/2006 SD784WS PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-323 A c HE A D E bp UNIT A bp C D E HE mm 1.10 0.80 0.40 0.25 0.15 0.00 1.80 1.60 1.35 1.15 2.80 2.30 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 01/09/2006