1SS413 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE for high speed switching application PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 Q Top View Marking Code: "Q" Simplified outline SOD-523 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Peak Reverse Voltage VRM 25 V Reverse Voltage VR 20 V Peak Forward Current IFM 100 mA Average Forward Current IO 50 mA Surge Current (10 ms) IFSM 1 A Power Dissipation Ptot 100 mW Junction Temperature TJ 125 O Storage Temperature Ts - 55 to + 125 O C C Characteristics at Ta = 25 OC Parameter Symbol Typ. Max. Unit Forward Voltage at IF = 50 mA VF - 0.55 V Reverse Current at VR = 20 V IR - 0.5 µA Total Capacitance at VR = 0 V, f = 1 MHz CT 3.9 - pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 23/11/2006 1SS413 PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-523 ALL ROUND C A ∠ HE D E bp A UNIT A bp C D E HE V mm 0.70 0.60 0.4 0.3 0.135 0.127 1.25 1.15 0.85 0.75 1.7 1.5 0.1 ∠ 5 O SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 23/11/2006