SVD5N60AT/SVD5N60AF 5A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD5N60AT/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure DMOS technology. The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. FEATURES ∗ 5A,600V,RDS(on) typ =2.0Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability ORDERING SPECIFICATIONS Part No. Package Marking Shipping SVD5N60AT TO-220-3L SVD5N60AT 50Unit/Tube SVD5N60AF TO-220F-3L SVD5N60AF 50Unit/Tube ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Parameter Symbol SVD5N60AF SVD5N60AT Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V ID 5.0 A Drain Current Power Dissipation(TC=25°C) -Derate above 25°C PD 100 33 W 0.8 0.26 W/°C Single Pulsed Avalanche Energy (Note 1) EAS 330 mJ Repetitive Avalanche Energy (Note 2) EAR 7.3 mJ Operation Junction Temperature Storage Temperature TJ -55 +150 °C Tstg -55 +150 °C HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2009.07.09 Page 1 of 7 SVD5N60AT/SVD5N60AF THERMAL CHARACTERISTICS Symbol SVD5N60AT SVD5N60AF Unit Thermal Resistance, Junction-to-Case R JC 1.25 3.79 °C/W Thermal Resistance, Junction-to-Ambient R JA 62.5 62.5 °C/W Parameter ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted) Parameter Min. Typ. Max. Unit BVDSS VGS=0V, ID=250µA 600 -- -- V Drain-Source Leakage Current IDSS VDS=600V, VGS=0V -- -- 10 µA Gate-Source Leakage Current IGSS VGS=±30V, VDS=0V -- -- ±100 nA VGS(th) VGS= VDS, ID=250µA 2.0 -- 4.0 V RDS(on) VGS=10V, ID=2A -- 2.0 2.4 Ω -- 672 -- -- 66 -- -- 4.7 -- -- 27 -- -- 19 -- -- 160 -- -- 22 -- Drain -Source Breakdown Voltage Gate Threshold Voltage Static Drain- Source On State Resistance Symbol Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Test conditions VDS=25V,VGS=0V, f=1.0MHZ VDD=300V,ID=4.4A, RG=25Ω pF ns (Note 3,4) Turn-off Fall Time tf Total Gate Charge Qg VDS=480V,ID=4.4A, -- 19.8 -- Gate-Source Charge Qgs VGS=10V -- 4 -- Gate-Drain Charge Qgd -- 7.2 -- Min. Typ. Max. -- -- 5.0 -- -- 16 (Note 3,4) nC SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Parameter Continuous Source Current Symbol IS Test conditions Integral Reverse P-N Junction Diode in the Unit A Pulsed Source Current ISM Diode Forward Voltage VSD IS=5.0A,VGS=0V -- -- 1.4 V Reverse Recovery Time Trr IS=5.0A,VGS=0V, -- 300 -- ns Reverse Recovery Charge Qrr dIF/dt=100A/µs (Note 3) -- 2.2 -- µC MOSFET Notes: 1. L=30mH,IAS=4.4A,VDD=85V,RG=25Ω,starting TJ=25°C; 2. Repetitive Rating: Pulse width limited by maximum junction temperature; 3. Pulse Test: Pulse width 300 s,Duty cycle 2%; 4. Essentially independent of operating temperature. HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2009.07.09 Page 2 of 7 SVD5N60AT/SVD5N60AF NOMENCLATURE TYPICAL CHARACTERISTICS Figure 2. Transfer Characteristics Figure 1. On-Region Characteristics 100 Va r i ab l e VGS=4 . 0V VGS=4 . 5V VGS=5 . 0V 10.0 T=-55 T=25 VGS=5 . 5V VGS=6 . 0V T=150 10 VGS=6 . 5V VGS=7 . 0V VGS=7 . 5V VGS=8 . 0V VGS=10V 1.0 1 VGS=15V Notes : 1. VDS = 50V 2. 250 s Pulse Test No t es : 1 . 250 s Pu l se Tes t 2 . TC = 25 0.1 0.1 1.0 0.1 10.0 0 1 2 3 4 5 6 7 8 9 VDS Drain-Source Voltage [V] VGS Gate-Source Voltage [V] Figure 3. On-Resitance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 10 10 2.6 VGS= 10.0V VGS= 20.0V 2.4 T=25 T=150 2.2 2 1 1.8 1.6 Notes : 1. VGS = 0V 2. 250 s Pulse Test 1.4 1.2 Note : TJ = 25 1 -2 0 2 4 6 8 10 ID Drain Current [A] HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn 0.1 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD Source-Drain Voltage [V] REV:1.0 2009.07.09 Page 3 of 7 SVD5N60AT/SVD5N60AF TYPICAL CHARACTERISTICS (continued) HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2009.07.09 Page 4 of 7 SVD5N60AT/SVD5N60AF TYPICAL TEST CIRCUIT Gate Charge Test Circuit & Waveform Same Type as DUT 50 VDS 200nF 12V VGS Qg 10V 300nF Qgs Qgd VGS DUT 3mA Charge Resistive Switching Test Circuit & Waveform RL VDS VDS 90% VGS VDD RG 10% VGS DUT 10V td(on) tr ton td(off) tf toff Unclamped Inductive Switching Test Circuit & Waveform L EAS = VDS BVDSS 1 2 2 LIAS BVDSS - VDD BVDSS ID IAS VDD RG ID(t) 10V DUT tp VDS(t) VDD Time tp HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2009.07.09 Page 5 of 7 SVD5N60AT/SVD5N60AF PACKAGE OUTLINE UNIT: mm TO-220-3L Two UNIT: mm 13.1±0.5 3.95MAX 15.1~15.9 6.10~6.80 TO-220-3L(One) HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2009.07.09 Page 6 of 7 SVD5N60AT/SVD5N60AF PACKAGE OUTLINE (continued) UNIT: mm L 12.6~13.8 12.4±0.4 A 6.70±0.20 TO-220F-3L(One) TO-220F-3L(Two) HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn UNIT: mm REV:1.0 2009.07.09 Page 7 of 7