SILAN SVD5N60AF

SVD5N60AT/SVD5N60AF
5A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD5N60AT/F is an N-channel enhancement mode power MOS
field effect transistor which is produced using Silan proprietary
S-RinTM structure DMOS technology. The improved planar stripe
cell and the improved guarding ring terminal have been especially
tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC
converters and H-bridge PWM motor drivers.
FEATURES
∗ 5A,600V,RDS(on) typ =2.0Ω@VGS=10V
∗ Low gate charge
∗ Low Crss
∗ Fast switching
∗ Improved dv/dt capability
ORDERING SPECIFICATIONS
Part No.
Package
Marking
Shipping
SVD5N60AT
TO-220-3L
SVD5N60AT
50Unit/Tube
SVD5N60AF
TO-220F-3L
SVD5N60AF
50Unit/Tube
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Parameter
Symbol
SVD5N60AF
SVD5N60AT
Unit
Drain-Source Voltage
VDS
600
V
Gate-Source Voltage
VGS
±30
V
ID
5.0
A
Drain Current
Power Dissipation(TC=25°C)
-Derate above 25°C
PD
100
33
W
0.8
0.26
W/°C
Single Pulsed Avalanche Energy (Note 1)
EAS
330
mJ
Repetitive Avalanche Energy (Note 2)
EAR
7.3
mJ
Operation Junction Temperature
Storage Temperature
TJ
-55
+150
°C
Tstg
-55
+150
°C
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
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REV:1.0
2009.07.09
Page 1 of 7
SVD5N60AT/SVD5N60AF
THERMAL CHARACTERISTICS
Symbol
SVD5N60AT
SVD5N60AF
Unit
Thermal Resistance, Junction-to-Case
R JC
1.25
3.79
°C/W
Thermal Resistance, Junction-to-Ambient
R JA
62.5
62.5
°C/W
Parameter
ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted)
Parameter
Min.
Typ.
Max.
Unit
BVDSS
VGS=0V, ID=250µA
600
--
--
V
Drain-Source Leakage Current
IDSS
VDS=600V, VGS=0V
--
--
10
µA
Gate-Source Leakage Current
IGSS
VGS=±30V, VDS=0V
--
--
±100
nA
VGS(th)
VGS= VDS, ID=250µA
2.0
--
4.0
V
RDS(on)
VGS=10V, ID=2A
--
2.0
2.4
Ω
--
672
--
--
66
--
--
4.7
--
--
27
--
--
19
--
--
160
--
--
22
--
Drain -Source Breakdown Voltage
Gate Threshold Voltage
Static Drain- Source On State
Resistance
Symbol
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
Turn-off Delay Time
td(off)
Test conditions
VDS=25V,VGS=0V,
f=1.0MHZ
VDD=300V,ID=4.4A,
RG=25Ω
pF
ns
(Note 3,4)
Turn-off Fall Time
tf
Total Gate Charge
Qg
VDS=480V,ID=4.4A,
--
19.8
--
Gate-Source Charge
Qgs
VGS=10V
--
4
--
Gate-Drain Charge
Qgd
--
7.2
--
Min.
Typ.
Max.
--
--
5.0
--
--
16
(Note 3,4)
nC
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Parameter
Continuous Source Current
Symbol
IS
Test conditions
Integral Reverse P-N
Junction Diode in the
Unit
A
Pulsed Source Current
ISM
Diode Forward Voltage
VSD
IS=5.0A,VGS=0V
--
--
1.4
V
Reverse Recovery Time
Trr
IS=5.0A,VGS=0V,
--
300
--
ns
Reverse Recovery Charge
Qrr
dIF/dt=100A/µs (Note 3)
--
2.2
--
µC
MOSFET
Notes:
1.
L=30mH,IAS=4.4A,VDD=85V,RG=25Ω,starting TJ=25°C;
2.
Repetitive Rating: Pulse width limited by maximum junction temperature;
3.
Pulse Test: Pulse width 300 s,Duty cycle 2%;
4.
Essentially independent of operating temperature.
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2009.07.09
Page 2 of 7
SVD5N60AT/SVD5N60AF
NOMENCLATURE
TYPICAL CHARACTERISTICS
Figure 2. Transfer Characteristics
Figure 1. On-Region Characteristics
100
Va r i ab l e
VGS=4 . 0V
VGS=4 . 5V
VGS=5 . 0V
10.0
T=-55
T=25
VGS=5 . 5V
VGS=6 . 0V
T=150
10
VGS=6 . 5V
VGS=7 . 0V
VGS=7 . 5V
VGS=8 . 0V
VGS=10V
1.0
1
VGS=15V
Notes :
1. VDS = 50V
2. 250 s Pulse Test
No t es :
1 . 250 s Pu l se Tes t
2 . TC = 25
0.1
0.1
1.0
0.1
10.0
0
1
2
3
4
5
6
7
8
9
VDS Drain-Source Voltage [V]
VGS Gate-Source Voltage [V]
Figure 3. On-Resitance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs.
Source Current and Temperature
10
10
2.6
VGS= 10.0V
VGS= 20.0V
2.4
T=25
T=150
2.2
2
1
1.8
1.6
Notes :
1. VGS = 0V
2. 250 s Pulse Test
1.4
1.2
Note : TJ = 25
1
-2
0
2
4
6
8
10
ID Drain Current [A]
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
0.1
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD Source-Drain Voltage [V]
REV:1.0
2009.07.09
Page 3 of 7
SVD5N60AT/SVD5N60AF
TYPICAL CHARACTERISTICS (continued)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2009.07.09
Page 4 of 7
SVD5N60AT/SVD5N60AF
TYPICAL TEST CIRCUIT
Gate Charge Test Circuit & Waveform
Same Type
as DUT
50
VDS
200nF
12V
VGS
Qg
10V
300nF
Qgs
Qgd
VGS
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveform
RL
VDS
VDS
90%
VGS
VDD
RG
10%
VGS
DUT
10V
td(on)
tr
ton
td(off)
tf
toff
Unclamped Inductive Switching Test Circuit & Waveform
L
EAS =
VDS
BVDSS
1
2
2 LIAS BVDSS - VDD
BVDSS
ID
IAS
VDD
RG
ID(t)
10V
DUT
tp
VDS(t)
VDD
Time
tp
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2009.07.09
Page 5 of 7
SVD5N60AT/SVD5N60AF
PACKAGE OUTLINE
UNIT: mm
TO-220-3L Two
UNIT: mm
13.1±0.5
3.95MAX
15.1~15.9
6.10~6.80
TO-220-3L(One)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2009.07.09
Page 6 of 7
SVD5N60AT/SVD5N60AF
PACKAGE OUTLINE (continued)
UNIT: mm
L
12.6~13.8
12.4±0.4
A
6.70±0.20
TO-220F-3L(One)
TO-220F-3L(Two)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
UNIT: mm
REV:1.0
2009.07.09
Page 7 of 7