BLV830 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified BVDSS 500V • Fast Switching RDS(ON) 1.5Ω Ω • Simple Drive Requirements ID 4.5A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unless otherwise noted ) Symbol Parameter Value Units VDS Drain-Source Voltage 500 V VGS Gate-Source Voltage + 20 V Continuous Drain Current 4.5 A Continuous Drain Current ( TC=100 oC) 2.85 A Drain Current (pulsed) (Note 1) 18 A Power Dissipation 75 W Linear Derating Factor 0.59 W/℃ EAS Single Pulsed Avalanche Energy (Note2) 250 mJ IAR Avalanche Current 4.5 A EAR Repetitive Avalanche Energy 7.5 mJ ID IDM PD Tj TSDG Operating Junction Temperature Range Storage Temperature Range -55 to +150 o -55 to +150 o C C Thermal Characteristics Symbol Parameter Rth j-c Thermal Resistance, Junction to case Rth j-a Thermal Resistance, Junction to Ambient Page 1/6 Max. Max. Value Units 1.67 ℃/ W 62.5 ℃/ W BLV830 N-channel Enhancement Mode Power MOSFET Electrical Characteristics ( TC=25C unless otherwise noted ) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 500 - - V ∆BVDSS /∆TJ Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.6 - V/℃ RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=2.7A - - 1.5 Ω VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V g fs Forward Transconductance(note3) VDS=50V, ID=2.7A 2.5 - - S IDSS Drain-Source Leakage Current Drain-Source Leakage Current Tc=125℃ VDS=500V, VGS=0V - - 1 uA VDS=400V, VGS=0V - - 100 uA IGSS Gate-Source Leakage Current VGS= ± 20V - - ±100 nA Qg Total Gate Charge - - 38 nC Qgs Gate-Source Charge - - 5 nC Qgd Gate-Drain Charge VDD=400V ID=4.5A VGS=10V note3 - - 22 nC t (on) Turn-on Delay Time - 8.2 - ns tr Turn-on Rise Time - 46 - ns t (off) Turn-off Delay Time - 90 - ns tf Turn-off Fall Time - 45 - ns Ciss Input Capacitance - 800 - pF Coss Output Capacitance - 100 - pF Crss Reverse Transfer Capacitance - 50 - pF Min. Typ. Max. Units VDD=250V ID=4.5A RG=25Ω note3 VDS=25V VGS=0V f = 1MHz Source-Drain Diode Characteristics Symbol Parameter Test Conditions IS Continuous Source Diode Forward Current - - 4.5 A ISM Pulsed Source Diode Forward Current (note1) - - 18 A VSD Forward On Voltage VGS=0V, IS=4.5A - - 1.6 V trr Reverse Recovery Time VGS=0V, IS=4.5A - 320 - ns Qr r Reverse Recovery Charge dIF/dt = 100A/us - 1 - uC Note： (1) Repetitive Rating: Pulse width limited by maximum junction temperature (2) L=25mH, Ias=4.5A，Vdd=50V，Rg=25Ω，staring Tj=25C (3) Pulse width ≤ 300 us; duty cycle ≤ 2% Page 2/6 BLV830 N-channel Enhancement Mode Power MOSFET Typical Characteristics Fig 1. Typical Output Characteristics Fig 3. Normalized BVdss vs. Junction Temperature Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance vs. Junction Temperature Page 3/6 BLV830 N-channel Enhancement Mode Power MOSFET Typical Characteristics （continued） ） Fig 5. On-Resistance Variation vs. Drain Current and Gate Voltage Fig 7. Gate Charge Characteristics Fig 6. Body Diode Forward Voltage Variation vs. Source Current and Temperature Fig 8. Capacitance Characteristics Page 4/6 BLV830 N-channel Enhancement Mode Power MOSFET Typical Characteristics （continued） ） Fig 9. Maximum Safe Operating Area Fig 10. Transient Thermal Response Curve Page 5/6 BLV830 N-channel Enhancement Mode Power MOSFET Test Circuit and Waveform Fig 11. Gate Charge Circuit Fig 12. Gate Charge Waveform Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Unclamped Inductive Switching Test Circuit Fig 16. Unclamped Inductive Switching Waveforms Page 6/6