SILIKRON SSF2312

SSF2312
D
DESCRIPTION
The SSF2312 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 2.5V. This device is suitable
for use as a Battery protection or in other Switching
application.
G
S
Schematic diagram
GENERAL FEATURES
● VDS = 20V,ID = 4.5A
RDS(ON) < 40mΩ @ VGS=2.5V
RDS(ON) < 33mΩ @ VGS=4.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
3
D
2312
G 1
2 S
Marking and pin Assignment
Application
●Battery protection
●Load switch
●Power management
SOT-23
top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
2312
SSF2312
SOT-23
Ø180mm
8 mm
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±8
V
ID
4.5
A
IDM
13.5
A
PD
1.25
W
TJ,TSTG
-55 To 150
℃
RθJA
100
℃/W
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
20
V
Zero Gate Voltage Drain Current
IDSS
VDS=20V,VGS=0V
1
μA
Gate-Body Leakage Current
IGSS
VGS=±8V,VDS=0V
±100
nA
ON CHARACTERISTICS (Note 3)
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SSF2312
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
Drain-Source On-State Resistance
RDS(ON)
Forward Transconductance
gFS
0.5
0.65
1.2
V
VGS=2.5V, ID=4.5A
33
40
mΩ
VGS=4.5V, ID=5A
27
33
mΩ
VDS=10V,ID=5A
10
S
500
PF
300
PF
PF
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
VDS=8V,VGS=0V,
F=1.0MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
140
Turn-on Delay Time
td(on)
20
40
nS
Turn-on Rise Time
tr
18
40
nS
60
108
nS
SWITCHING CHARACTERISTICS (Note 4)
Turn-Off Delay Time
VDD=10V,ID=1A
VGS=4.5V,RGEN=6Ω
td(off)
Turn-Off Fall Time
tf
28
56
nS
Total Gate Charge
Qg
10
15
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=10V,ID=5A,VGS=4.5V
2.3
nC
2.9
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
Diode Forward Current (Note 2)
IS
VGS=0V,IS=1A
1.2
V
1
A
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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SSF2312
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ton
tr
Vdd
td(on)
Rl
Vin
Vgs
Rgen
D
toff
tf
td(off)
90%
Vout
VOUT
90%
INVERTED
10%
10%
G
90%
VIN
S
50%
50%
10%
PULSE WIDTH
Figure 2:Switching Waveforms
Normalized Effective
Transient Thermal Impedance
Figure 1: Switching Test Circuit
Square Wave Pluse Duration(sec)
Figure 3: Normalized Maximum Transient Thermal Impedance
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SSF2312
SOT-23 PACKAGE INFORMATION
Dimensions in Millimeters (UNIT:mm)
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions in Millimeters
MIN.
MAX.
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950TYP
1.800
2.000
0.550REF
0.300
0.500
0°
8°
NOTES
1. All dimensions are in millimeters.
2. Tolerance ±0.10mm (4 mil) unless otherwise specified
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
©Silikron Semiconductor CO.,LTD.
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SSF2312
ATTENTION:
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Any and all Silikron products described or contained herein do not have specifications that can handle applications that require
extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can
be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron
representative nearest you before using any Silikron products described or contained herein in such applications.
Silikron assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in
products specifications of any and all Silikron products described or contained herein.
Specifications of any and all Silikron products described or contained herein stipulate the performance, characteristics, and
functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and
functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that
cannot be evaluated in an independent device, the customer should always evaluate and test devices
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Any and all information described or contained herein are subject to change without notice due to
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This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change without notice.
©Silikron Semiconductor CO.,LTD.
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