SKYWORKS SKY65051

DATA SHEET
SKY65051-377LF: 0.45-6.0 GHz Low Noise Transistor
Applications
x Wireless infrastructure: WLAN, WiMAX, broadband, cellular base
stations
x Test instrumentation
x LNA for GPS receivers
x Satellite receivers
Figure 1. SKY65051-377LF Block Diagram
x Externally matched for wideband operation
x Noise Figure = 0.45 dB @ 2.4 GHz of device only
x Noise Figure = 0.65 dB @ 2.4 GHz including matching network
loss
x Gain = 15.5 dB @ 2.4 GHz
x OIP3 = +24 dBm @ 2.4 GHz
x P1dB = +12 dBm @ 2.4 GHz
x Adjustable supply current from 5 to 55 mA
The SKY65051-377LF is a high performance, n-channel lownoise transistor. The device is fabricated from Skyworks
advanced depletion mode pHEMT process and is provided in a
2 x 2 mm, 4-pin Quad Flat No-Lead (QFN) package.
The transistor’s low Noise Figure (NF), high gain, and excellent 3rd
Order Intercept Point (IP3) allow the device to be used in various
receiver and transmitter applications.
A functional block diagram is shown in Figure 1. The pin
configuration and package are shown in Figure 2. Signal pin
assignments and functional pin descriptions are provided in
Table 1.
1
2
4
3
SOURCE
GATE
DRAIN
x Small, QFN (4-pin, 2 x 2 mm) Pb-free package (MSL1, 260 qC
per JEDEC J-STD-020)
Description
SOURCE
Features
Figure 2. SKY65051-377LF Pinout – 4-Pin QFN
(Bottom View)
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DATA SHEET • SKY65051-377LF LOW NOISE TRANSISTOR
Table 1. SKY65051-377LF Signal Descriptions
Pin #
Name
Description
Pin #
Name
Description
1
DRAIN
RF output. Requires external matching
network for optimum performance. Supply
voltage required through external RF choke.
3
GATE
RF input. Requires external matching
network for optimum performance.
2
SOURCE
Source lead. Provides DC self-biasing point
and AC ground.
4
SOURCE
Source lead. Provides DC self-biasing point
and AC ground.
Table 2. Self-Biasing Resistors
Resistor Value (Ω)
Drain Current (mA)
130
5
47
10
27
15
20
20
15
25
10
30
Functional Description
The SKY65051-377LF is a depletion mode pHEMT designed for
low noise, high frequency applications. The SKY65051-377LF has
a typical NF of 0.65 dB tested at the 2.4 GHz wireless LAN
frequency band. A gain of 15.5 dB typical is achieved using the
same circuit. If the frequency of operation is lowered to the 1 GHz
range, NF performance of the device can approach 0.5 dB
including input matching network losses.
De-embedded scattering and noise parameters are provided in
addition to typical circuit topologies for commonly used frequency
bands. With an appropriate circuit, the SKY65051-377LF can be
used for many applications from 450 MHz up to 6 GHz. The 2 x 2
mm QFN package makes the SKY65051-377LF an ideal low noise
and low cost solution.
Biasing
To properly bias a depletion mode pHEMT, both the gate and
drain of the device must be properly biased. At VGS = 0 V and
VDS ≥ 2 V, the device is in a saturated state and draws the
maximum amount of current, IDSS. The device typically achieves
the best noise performance at VDS = 3 V and IDSS = 15 mA. To
control IDS, VGS must be biased with a negative voltage supply.
To eliminate the need for a negative DC supply, self-biasing
should be used when a resistor is placed between one of the
source leads and ground. A bypass capacitor should be placed in
parallel to this resistor to provide an RF ground and to ensure
performance remains unchanged at the operating frequency.
desired negative VGS value. This simplifies the design by
eliminating the need for a second DC supply.
Table 2 provides the resistor values used to properly bias the
SKY65051-377LF.
RF Matching Networks
The SKY65051-377LF Evaluation Board assembly diagram is
shown in Figure 12 and a circuit schematic is provided in
Figure 13. The schematic shows the recommended RF matching
network used for the 2.4 GHz wireless LAN frequency band. The
network was designed using de-embedded s- and n-parameters.
The circuit was primarily tuned for gain, NF, and input and output
return loss, while maintaining proper stability.
Optimal noise performance is attained when the impedance
presented to the input of the amplifier is equal to its minimum NF
impedance point. Components C1, C2, C3, L1, and L2 shown in
Figures 12 and 13 provide the necessary impedance match for NF
and input return loss. Circuit board and input matching structure
losses on the input of the amplifier directly add to the overall NF
of the amplifier. It is critical to minimize RF trace lengths and to
use high-Q components to achieve optimal NF performance.
Components R2 and C14 provide self biasing for the device and
RF grounding for one of the two source leads. Components C5
and L3 are placed on the opposing source lead and are used to
tune the transistor’s source inductance.
When current flows from drain to source and through the resistor,
the source voltage becomes biased above DC ground. The gate
pin of the device should be left unbiased at 0 V, which creates the
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DATA SHEET • SKY65051-377LF LOW NOISE TRANSISTOR
Electrical and Mechanical Specifications
The effect of source inductance varies with frequency. Too little
source inductance increases gain and high frequency stability, but
at the cost of decreased in-band stability. Too much source
inductance decreases high frequency stability and gain, but
increases in-band stability. It is very important to find the
optimum tuning of source inductance that balances all of these
variables.
The absolute maximum ratings of the SKY65051-377LF are
provided in Table 3. The recommended operating conditions are
specified in Table 4 and electrical specifications are provided in
Table 5.
Performance characteristics for the SKY65051-377LF are
illustrated in Figures 3 through 11.
The output matching topology is typical for an RF transistor.
Component L3 is the RF choke that prevents RF signals from
reaching the DC supply. Component C4 is the DC blocking
capacitor. Components C10 and C11 improve output return loss
and 3rd Order Output Intercept Point (OIP3) performance.
Table 3. SKY65051-377LF Absolute Maximum Ratings
Parameter
Symbol
Minimum
Typical
Maximum
Units
+10
dBm
+20
dBm
Input power
PIN
Output power
POUT
Drain source voltage
VDS
Gate source voltage
VGS
–5.0
V
Gate drain voltage
VGD
–5.0
V
Drain current
IDS
55
mA
Gate current
IGS
100
μA
Power dissipation
PDIS
240
mW
Channel temperature
TCHAN
150
qC
Storage temperature
TSTG
–65
+125
qC
Operating temperature
TOP
–40
+85
qC
Note:
6.0
V
Exposure to maximum rating conditions for extended periods may reduce device reliability. There is no damage to device with only one parameter set at the limit and all other
parameters set at or below their nominal value.
CAUTION: Although this device is designed to be as robust as possible, Electrostatic Discharge (ESD) can damage this device. This device
must be protected at all times from ESD. Static charges may easily produce potentials of several kilovolts on the human body
or equipment, which can discharge without detection. Industry-standard ESD precautions should be used at all times.
Table 4. SKY65051-377LF Recommended Operating Conditions
Minimum
Typical
Maximum
Units
Supply voltage
Parameter
VDD
Symbol
2
3
5
V
Supply current
IDD
5
20
50
mA
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DATA SHEET • SKY65051-377LF LOW NOISE TRANSISTOR
Table 5. SKY65051-377LF Electrical Specifications (Note 1)
(TOP = +25 qC, Characteristic Impedance [ZO] = 50 Ω, VDD = 3 V, IDD = 20 mA, Parameters Include a 2.4 GHz Matching Network, Unless
Otherwise Noted)
Parameter
Symbol
Test Condition
Min
Saturated drain current
IDSS
VDS = 2 V, VGS = 0 V
Pinchoff voltage
VP
VDS = 2 V, IDS = 2.5% of
IDSS
Transconductance
gM
VDS = 2 V,
gM = ΔIDS/ΔVGS,
measured at IDS = 20 % of
IDSS
Gate leakage current
IGSS
VGD = VGS = –3 V
Noise Figure
NF1 (Note 2)
@ 2.4 GHz
Typical
|S21|
Units
40
55
70
mA
–0.95
–0.80
–0.65
V
40
80
120
mS
1
200
μA
0.40
0.85
NF2 (Note 3)
Gain
Max
dB
0.65
@ 2.4 GHz
13.5
dB
15.5
17.5
dB
Input return loss
|S11|
@ 2.4 GHz
–25
dB
Output return loss
|S22|
@ 2.4 GHz
–8
dB
Reverse isolation
|S12|
@ 2.4 GHz
–23.5
dB
3 Order Output Intercept Point
OIP3
POUT = –10 dBm/tone,
ΔF = 1 MHz, @ 2.4 GHz
+24.0
dBm
3rd Order Input Intercept Point
IIP3
POUT = –10 dBm/tone,
ΔF = 1 MHz, @ 2.4 GHz
+8.5
dBm
rd
1 dB Output Compression Point
OP1dB
@ 2.4 GHz
+12.0
dBm
1 dB Input Compression Point
IP1dB
@ 2.4 GHz
–2.5
dBm
>1
K
Stability
Unconditionally stable,
DC – 18 GHz
Note 1: Performance is guaranteed only under the conditions listed in this Table and is not guaranteed over the full operating or storage temperature ranges. Exceeding any of the conditions
listed here may result in permanent damage to the device. Operation at elevated temperatures may reduce reliability of the device.
Note 2: NF of device only. Input RF connector, board, and input matching network loss de-embedded from measurement.
Note 3: NF of device and matching network. Input RF connector and board loss de-embedded from measurement.
Typical Performance Characteristics
(TOP = +25 qC, Characteristic Impedance [ZO] = 50 Ω, VDD = 3 V, IDD = 20 mA, Includes a 2.4 GHz Matching Network, Unless Otherwise
Noted)
18
60
0V
17
50
Small Signal Gain (dB)
–0.1 V
40
IDS (mA)
–0.2 V
30
–0.3 V
–0.4 V
20
–0.5 V
10
16
15
14
13
12
11
–0.6 V
–0.7 V
0
0
1
2
3
VDS (V)
Figure 3. Typical IV Curves
4
5
10
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
Figure 4. Small Signal Gain vs Frequency, PIN = –20 dBm
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4
2800
Frequency (MHz)
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DATA SHEET • SKY65051-377LF LOW NOISE TRANSISTOR
0
0
–5
–5
–10
Reverse Isolation (dB)
Input Return Loss (dB)
–10
–15
–20
–25
–30
–35
–15
–20
–25
–30
–40
–35
–45
–50
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
–40
1800
2800
1900
2000
2100
Figure 5. Input Return Loss vs Frequency, PIN = –20 dBm
2300
2400
2500
2600
2700
2800
Figure 6. Reverse Isolation vs Frequency, PIN = –20 dBm
0
1.0
–1
0.9
–2
0.8
–3
0.7
Noise Figure (dB)
Output Return Loss (dB)
2200
Frequency (MHz)
Frequency (MHz)
–4
–5
–6
–7
0.6
0.5
0.4
0.3
–8
0.2
–9
0.1
–10
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
0
2300
2800
2350
2400
2450
2500
Frequency (MHz)
Frequency (MHz)
Figure 7. Output Return Loss vs Frequency, PIN = –20 dBm
Figure 8. NF vs Frequency, Input RF Connector and Board Loss
De-Embedded From Measurement
16.0
2.0
20
14.5
1.8
18
14.0
1.6
16
1.4
14
1.2
12
1.0
10
0.8
8
0.6
6
0.4
4
0.2
2
Minimum NF (dB)
Gain (dB)
15.0
13.5
13.0
12.5
12.0
11.5
11.0
10.5
10.0
–20
–18
–16
–14
–12
–10
–8
–6
–4
–2
0
+2
0
0
0
Input Power (dBm)
Figure 9. Gain vs Input Power, F = 2.4 GHz
Associated Gain (dB)
15.5
1
2
3
4
5
6
Frequency (GHz)
Figure 10. Minimum NF and Associated Gain vs Frequency,
IDD = 15 mA
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2.0
25.0
1.8
22.5
1.6
20.0
1.4
17.5
1.2
15.0
1.0
12.5
0.8
10.0
0.6
7.5
0.4
5.0
0.2
2.5
0
0
10
20
30
40
50
60
Associated Gain (dB)
Minimum Noise Figure (dB)
DATA SHEET • SKY65051-377LF LOW NOISE TRANSISTOR
0
Drain Current (mA)
Figure 11. Minimum NF and Associated Gain vs Drain Current,
F = 2.4 GHz
Evaluation Board Description
Package Dimensions
The SKY65051-377LF Evaluation Board is used to test the
performance of the SKY65051-377LF low noise transistor. An
assembly drawing for the Evaluation Board is shown in Figure 12.
The Evaluation Board schematic diagram is shown in Figure 13.
Table 6 provides the Bill of Materials (BOM) list for Evaluation
Board components.
Package dimensions for the 4-pin QFN are shown in Figure 14,
and tape and reel dimensions are provided in Figure 15.
Package and Handling Information
The board is populated for 2.4 GHz operation and contains a
separate probe footprint for general device testing or source and
load pull characterization. The board is provisioned with two RF
connectors and a 3-pin DC launch. The RF connector and board
loss up to component C1 is approximately 0.15 dB at 2.4 GHz.
Since the device package is sensitive to moisture absorption, it is
baked and vacuum packed before shipping. Instructions on the
shipping container label regarding exposure to moisture after the
container seal is broken must be followed. Otherwise, problems
related to moisture absorption may occur when the part is
subjected to high temperature during solder assembly.
Board material is 10 mil thick VT47 FR4 with 1 oz. copper
cladding. RF input and output traces are 50 Ω.
THE SKY65051-377LF is rated to Moisture Sensitivity Level 1
(MSL1) at 260 qC. It can be used for lead or lead-free soldering.
Caution: Do not ground the exposed pad.
Evaluation Board Test Procedure
Step 1: Connect RF test equipment to amplifier input/output SMA
connectors.
Care must be taken when attaching this product, whether it is
done manually or in a production solder reflow environment.
Production quantities of this product are shipped in a standard
tape and reel format. For packaging details, refer to the Skyworks
Application Note, Discrete Devices and IC Switch/Attenuators
Tape and Reel Package Orientation, document number 200083.
Step 2: Connect DC ground.
Step 3: Connect VDD to a +3 V supply with a current limit of
60 mA. Verify that the board draws approximately 20 mA.
Step 4: Apply RF signal or noise source and verify performance
detailed in Table 5.
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DATA SHEET • SKY65051-377LF LOW NOISE TRANSISTOR
R2
C15
C14
C3
C2 L2
C13
L5
C9
C1
L1
C4
C11
L4
C10
C8
C7
L3
C5
C12
R1
C6
VDD
OUT
Caution: Do not ground the exposed pad.
S1412
Figure 12. SKY65051-377LF Evaluation Board Assembly Diagram
C9
C11
L5
RF Output
C10
C12
L4
C1
L2
RF Input
C8
C3
C2
L1
C7
C4
L3
R2
C14
C15
R1
C5
C6
VDD
S1406
Figure 13. SKY65051-377LF Evaluation Board Schematic
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DATA SHEET • SKY65051-377LF LOW NOISE TRANSISTOR
Table 6. SKY65051-377LF (QFN Package) Evaluation Board Bill of Materials
Component
Value
Size
Manufacturer
Part Number
C1
20 pF
SMT 0402
Murata
GJM Series
C2
8.2 nH
SMT 0402
Coilcraft
CS Series
C3
0.2 pF
SMT 0402
Murata
GJM Series
C4, C6, C7, C12, C13, C15
DNP
C5
1000 pF
SMT 0402
Murata
GRM Series
C8
22 pF
SMT 0402
C9
1.8 pF
SMT 0402
Murata
GRM Series
C10
0.5 pF
SMT 0402
Murata
GRM Series
C11
3.3 nH
SMT 0402
TDK
MLG Series
C14
1000 pF
SMT 0402
Murata
GRM Series
C15
20 Ω
SMT 0402
Panasonic
L1
1.5 pF
SMT 0402
Murata
GJM Series
L2
3.3 nH
SMT 0402
Coilcraft
CS Series
L3
1.6 nH
SMT 0402
TDK
MLG Series
L4
3.3 nH
SMT 0402
TDK
MLG Series
L5
0Ω
SMT 0402
Panasonic
R1
0Ω
SMT 0402
Panasonic
R2
DNP
4X 0.600
2X 0.300
See Detail A for
Solderable Area
2X 0.600
0.650
1.250
1.300
0.600
Pin 1
See Detail B for
Solderable Area
Package Outline
0.55
0.55
0.40
0.30
Detail B
Detail A (3X)
Caution: Do not ground the exposed pad.
S1416
Figure 14. SKY65051-377LF PCB Layout Footprint
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DATA SHEET • SKY65051-377LF LOW NOISE TRANSISTOR
C
2.00
0.6+0.1/–0.15
(0.300)
A
0.02+0.03/–0.02
B
Exposed Pad
Detail B
1.2+0.1/–0.15
2X 0.65
1.25
2.00
0.10 C
0.10 C
Detail A
0.55+0.05/–0.04
4X 0.20 Min
4X
0.08 C
0.10 C
3
0.4 ± 0.1
0.4 ± 0.1
0.4 ± 0.05
0.3 ± 0.05
0.10 M C A B
Detail A
Scale: 100X
5
Detail B
Scale: 100X
3 Places
R 0.15
S1411
Figure 15. SKY65051-377LF 4-Pin QFN Package Dimensions
∅1.50+ 0.10/–0.00
0.30 ± 0.05 (T)
Pin #1
4.00 ± 0.10
2.00 ± 0.05
4.00 (see Note 4)
1.75 ± 0.10
B
A
B
∅1.00 Min.
1.00 (Ko)
2.30 (Ao)
8.00 +0.30/–0.10
A
2.30 (Bo)
2X
Pin 1
Indicator
3.50 ± 0.05
2X
1.30
(0.600)
R0.30 Max
B
A
Notes:
1. Carrier tape: black conductive polystyrene.
2. Cover tape material: transparent conductive HSA.
3. Cover tape size: 5.40 mm width.
4. Ten sprocket hole pitch cumulative tolerance = ±0.20 mm.
5. All measurements are in millimeters.
S1601
Figure 16. SKY65051-377LF Tape and Reel Dimensions
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com
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DATA SHEET • SKY65051-377LF LOW NOISE TRANSISTOR
Ordering Information
Model Name
SKY65051-377LF Low Noise Transistor
Manufacturing Part Number
SKY65051-377LF (Pb-free package)
Evaluation Kit Part Number
SKY65051-377LF (2400 MHz)
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