SS6563 Versatile DC/DC Converter FEATURES DESCRIPTION The SS6563 is a monolithic control circuit that Operates from 3V to 30V input voltage Internal 2A peak current switch. Continuous output current of 1.5A Bootstrapped driver. High-side current sense capability. High efficiency (up to 90%). provides the primary functions required for DC to DC converters and high-side-sensed constant current sources. The device consists of an internal temperature compensated reference, comparator, controlled duty-cycle oscillator with an Internal ±2% reference. Low quiescent current at 1.6mA. Operating frequency from 100Hz to 100KHz. active current-sense circuit, bootstrapped driver, and high-current output switch. This device is specifically designed to construct a constant current source for battery chargers with a minimum APPLICATIONS number of external components. A bootstrapped Constant Current Source for Battery Chargers. Saver for Cellular phones. Step-Down DC/DC Converter Module. driver can drive the NPN output switch to saturation for higher efficiency and less heat dissipation. The SS6563 can deliver 1.5A continuous current without requiring a heat sink. TYPICAL APPLICATION CIRCUIT D3 R1 When VIN>15V make R1=1K 470 D2 + 1N4148 RS 0.22 8V~25V 300µH BOOST DC IS DE VCC CF 7 6 + C1 100µF L1 1µF 8 VIN 1N4148 C3 5 GND FB D1 1N5819 1 2 3 4 + 5V/1A C4 470µF R2 390K C2 1000pF SS6563 RB RA 1K 3K R3 2.2M Line Regulation VIN = 10V~20V @ IO=1A 40mV Load Regulation VIN = 15V, @ IO=100mA~1A 20mV Short Circuit Current VIN =15V, @ RL = 0.1Ω 1.3A Step-Down Converter Rev.2.02 4/06/2004 www.SiliconStandard.com 1 of 10 SS6563 ORDERING INFORMATION PIN CONFIGURATION SS6563-CXXX PDIP-8, SO-8 Packing TR: Tape and reel TB: Tubes TOP VIEW DC Package type DE N: PDIP-8 (only available in tubes) CF S: SO-8 GND Example: SS6563CSTR 1 8 BOOST 2 7 3 6 IS VCC 4 5 FB à in SO-8 package shipped in tape and reel ABSOLUTE MAXIMUM RATINGS Supply Voltage ..............................................................……………............................. 30V Comparator Input Voltage Range ............................................………….......... -0.3V~30V Switch Collector Voltage ....................................................……………......................... 30V Switch Emitter Voltage ......................................................……………......................... 30V Switch Collector to Emitter Voltage ..................................…………............................. 30V Driver Collector Voltage ....................................................…………….......................... 30V Switch Current ................................................………………......................................... 2A Power Dissipation and Thermal Characteristics DIP Package Ta= 25°C ............................…………................................ 1.0W Thermal Resistance .............…………......................... 100°C/W SO Package Ta= 25°C......................……………............................... 625mW Thermal Resistance ...................………...................... 160°C/W Operating Junction Temperature .....................................................………............. 125°C Operating Ambient Temperature Range .......................……………......................... 0~70°C Storage Temperature Range ...................................………….................... - 65°C ~ 150°C Rev.2.02 4/06/2004 www.SiliconStandard.com 2 of 10 SS6563 TEST CIRCUIT R1 VCC 1K 50mA Current Source 4.55V @VCC=5V 1A Current Source 1 BOOST 8 DC 2 3 2V/0V IDISCHG/ ICHG DE IS CF VCC 4 FB GND 4.75V 7 6 VCC 5 1.275V 1.225V SS6563 CT 1nF ELECTRICAL CHARACTERISTICS PARAMETER (VCC= 5V, T A=25°C, unless otherwise specified.) TEST CONDITIONS SYMBOL MIN. TYP. MAX. UNIT Oscillator Charging Current 5.0V≤VCC≤30V ICHG 10 25 40 µA Discharge Current 5.0V≤VCC≤30V IDISCHG 100 150 200 µA Voltage Swing PIN 3 Discharge to Charge Current Ratio VIS =VCC Current Limit Sense Voltage ICHG=IDISCHG VOSC 0.6 IDISCHG / ICHG 6.0 VCC – VIS 250 V 300 350 mV Output Switch Saturation Voltage, Emitter Follower Connection IDE=1.0A; VBOOST =VDC = VCC VCE(SAT) 1.5 1.8 V Saturation Voltage IDC=1.0A; IBOOST =50mA, (Forced β≅20) VCE (SAT) 0.4 0.7 V DC Current Gain ISC =1.0A; VCE=5.0V Collector Off-State Current VCE=30V Rev.2.02 4/06/2004 hFE IC(OFF) www.SiliconStandard.com 35 120 10 nA 3 of 10 SS6563 ELECTRICAL CHARACTERISTICS PARAMETER (VCC= 5V, TA=25°C, unless otherwise specified.) TEST CONDITIONS SYMBOL MIN. TYP. MAX. UNIT 1.275 V 1.29 V Comparator Threshold Voltage TA=25°C 0°C ≤ TA ≤ 70°C Threshold Voltage Line Regulation 3.0V≤VCC≤30V Input Bias Current Supply Current 1.225 VFB 1.21 1.25 REGLINE 0.1 0.3 mV/V VIN=0V IIB 0.4 1 µA VIS =VCC, pin 5>VFB 5.0V≤ VCC ≤30V CT=1nF PIN 2=GND Remaining pins open ICC 1.6 3 mA ICC, Supply Current (mA) ON -TIME 100 1000 2 VCC=5V VIS =VCC PIN 5=GND 10 OFF-TIME 1.6 CT = 1nF VIS = VCC PIN 2 =GND 1.2 0.8 0.4 1 tON-OFF, Output Switch ON-OFF Time (µS) TYPICAL PERFORMANCE CHARACTERISTICS 1 0.1 10 CT, Oscillator Timing Capacitor (nF) Fig. 1 Output Switch ON-OFF Time vs. Oscillator Timing Capacitor Rev.2.02 4/06/2004 100 0 0 5 10 15 20 25 30 VCC, Supply Voltage (V) Fig. 2 Standby Supply Current vs. Supply Voltage www.SiliconStandard.com 4 of 10 SS6563 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 350 1.3 VFB, Threshold Voltage (V) VCC-VIS Threshold Voltage ( mV) VCC = 5V, CT = 1nF, PIN 2 = GND 1.28 1.26 1.24 1.22 1.2 0 10 20 30 40 50 60 70 80 VCC = 5V, CT = 1nF, PIN 2 = GND 340 330 320 310 300 290 280 270 260 250 0 10 20 Temperature (°C) Fig. 4 Fig. 3 VFB, Threshold Voltage vs. Temperature 0.8 VCE(SAT), Saturation Voltage (V) VCE(SAT), Saturation Voltage (V) 1.8 VCC = 5V PIN 1, 7, 8 = VCC PIN 3, 5 = GND 1.7 1.6 1.5 1.4 1.3 1.2 0 0.5 1 40 50 60 70 80 VCC = 5V PIN 7 = VCC PIN 2, 3, 5 = GND 0.6 0.4 Forced Beta = 20 0.2 0 0 1.5 30 Temperature (°C) IS Threshold Voltage vs. Temperature 0.5 IE, Emitter Current (A) 1 1.5 IC, Collector Current (A) Fig. 6 Common Emitter Configuration Output Switch Saturation Voltage vs. Collector Current Fig. 5 Emitter Follower Configuration Output Switch Saturation Voltage vs. Emitter Current BLOCK DIAGRAM 1 DC 8 Q2 Q1 BOOST QS R 80 2 DE 7 IS Is CT Oscillator CF 6 3 VCC Comparator 1.25V Reference Voltage GND Rev.2.02 4/06/2004 + - 4 5 FB www.SiliconStandard.com 5 of 10 SS6563 PIN DESCRIPTIONS PIN 1: DC - The collector of the switch - 2A. PIN 5: FB - Feedback comparator inverting input. PIN 2: DE - Darlington switch emitter. PIN 6: VCC - Power supply input. PIN 3: CF - Oscillator timing capacitor. PIN 7: IS - Highside current sense input. VCC - VIS=300mV. PIN 4: GND - Power ground. PIN 8: BOOST - Bootstrapped driver collector. APPLICATION INFORMATION DESIGN FORMULA TABLE CALCULATION t ON t OFF (tON + tOFF) MAX STEP-DOWN STEP-UP VOUT + VF VIN(MIN) - VSAT - VOUT 1 FMIN VOUT + VF - VIN(MIN) VIN(MIN) - VSAT 1 FMIN -5 CT 4x10 tON IC (SWITCH) 2IOUT(MAX) RS 2IOUT(MAX) ( 0.3/IC(SWITCH) L(MIN) Co ( The following power supply characteristics must be chosen: VIN - Nominal input voltage. VOUT - Desired output voltage, VOUT = 1.25 (1 + RB/RA) t ON + t OFF ) t OFF 0.3/ IC (SWITCH) VIN(MIN) - VSAT - VOUT )tON(MAX) IC(SWITCH) IC( SWITCH) (t ON + t OFF) 8V RIPPLE( P - P ) VSAT = Saturation voltage of the output switch. VF = Forward voltage of the ringback rectifier IOUT -5 4 x 10 tON FMIN ( VIN(MIN) - VSAT )tON(MAX) IC(SWITCH) IOUT tON VRIPPLE(P - P) - Minimum desired switching frequency at selected values for VIN and IOUT . VRIPPLE (P-P) - Desired peak-to-peak output ripple voltage. In practice, the calculated value will need to be increased due to the capacitor equivalent series resistance and board layout. The ripple voltage should be kept to a low value since it will directly affect the line and load regulation. - Desired output current. Rev.2.02 4/06/2004 www.SiliconStandard.com 6 of 10 SS6563 APPLICATION EXAMPLES D1 R2 1K D2 L1 IN4148 C5 C4 220µF U1 3 4 C1 BOOST IS + GND FB 470P C10 C7 0.1µF 47nF MPS2222A ICON VBT 3 LED2 DIS 680 4 LED1 VTS GND VCC 6 BAT1 C3 220µF SS6563 2 R15 Q1 91K VCC 5 DSW 5 RS 0.3/1W 6 CF 4.7µF 1N5819 IN4148 7 DE D4 D3 8 DC RX R7 THERMISTOR 2 C9 R9 100K 1 PEAK + RY R14 C11 C6 0.1µF 7 200K + 100µF C8 R12 U2 YELLOW 0.1µF **BATTERY 1 R4 PB SW R10 100K R8 300K LED3 LED2 20/5W IN5819 + 1µF R5 120/0.5W 390K 270 LED1 220µH C2 SW1 R3 R1 R6 8 50K 0.1µF R11 SEL1 ADJ SEL3 SEL2 TMR MODE GREEN RED R16 R17 680 680 16 15 14 13 12 11 10 9 SS6781 100K U3 VIN 11~15V 78L05 VIN + R13 470K C12 VOUT Q2 MMBT2222A + C13 GND 1µF 10µF **3~5 NiMH/NiCd cells. Note: Charge Current=0.3/RS Ampere Safety Timer: 80min Fig. 1 Battery Charger Circuit for Fluctuating Charging Current Applications R1 220µH 1K C3 1µF R2 120 D2 D3 1N5819 (%) V IN = 16V, V O= 12V D1 1N5821 1N4148 220µF DC + + DE C1 470pF CF CT CO GND SS6563 90 C5 10µF BOOST 220µF IO L + VIN 100 *RS IS V IN= 16V, V O= 8V 80 VCC RB FB RA 5.6K 33K 70 0 *IO=300mV/RS 0.5 1 1.5 2 Io (A ) Efficiency vs Output Current Fig. 2 Battery Charge Circuit Rev.2.02 4/06/2004 www.SiliconStandard.com 7 of 10 SS6563 APPLICATION EXAMPLES (Continued) C3 D1 L1 + 5V 1N5819 300µH 1µF 8 RS 0.22 VIN BOOST DC IS DE VCC CF 7 6 16V~25V + 5 C1 100µF GND FB D1 1N5819 1 + 12V/1A C4 470µF 2 3 4 RB C2 470pF RA 1K SS6563 13K Fig. 3 Step-Down Converter with External 5V Bootstrap D1 200µH VOUT L1 1N5819 R1 150 RS 0.22 VIN 8~16V C1 + 100µF 28V/200mA + 8 BOOST DC 1 7 IS DE 2 6 VCC CF 3 220µF C0 GND 4 5 FB CT 680pF SS6563 RA RB 2K2 47K Line Regulation VIN = 8V~16V @ IO=200mA 100mV Load Regulation VIN = 12V, @ IO=80mA~200mA 40mV Fig. 4 Step-Up Converter Rev.2.02 4/06/2004 www.SiliconStandard.com 8 of 10 SS6563 APPLICATION EXAMPLES (Continued) D1 L VOUT R1 + 8 BOOST DC IS DE 7 RS VIN 6 CF VCC + 5 C1 FB GND C0 1 2 Q1 3 R2 4 CT SS6563 RA RB Fig. 5 Step-Up Converter with External NPN Switch 1 2 L1 BOOST DE IS CF VCC 3 100µH D1 DC 7 0.26 RS 6 4 CT 560pF 8 5 GND FB VIN 4.5V~6V + 100µF C1 1N5819 SS6563 VOUT -12V/100mA + 953 RB C0 RA 8.2K 470µF Line Regulation VIN = 4.5V~6V @ IO=100mA 20mV Load Regulation VIN = 5V, @ IO=10mA~100mA 100mV Fig. 6 Inverting Converter Rev.2.02 4/06/2004 www.SiliconStandard.com 9 of 10 SS6563 PHYSICAL DIMENSIONS 8 LEAD PLASTIC SO (unit: mm) D SYMBOL MIN MAX A 1.35 1.75 A1 0.10 0.25 B 0.33 0.51 C 0.19 0.25 D 4.80 5.00 E 3.80 4.00 H E e e A A1 C B 1.27(TYP) H 5.80 6.20 L 0.40 1.27 L 8 LEAD PLASTIC DIP (unit: mm) D E1 E A2 A1 MAX A1 0.381 — A2 2.92 4.96 b 0.35 0.56 C 0.20 0.36 D 9.01 10.16 E 7.62 8.26 E1 6.09 7.12 e eB e MIN C L b SYMBOL 2.54 (TYP) eB — 10.92 L 2.92 3.81 Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. Rev.2.02 4/06/2004 www.SiliconStandard.com 10 of 10