SST SST25WF080

8Mbit 1.8V SPI Serial Flash
SST25WF080
SST25VF016B16Mb Serial Peripheral Interface (SPI) flash memory
Advance Information
FEATURES:
• Single Voltage Read and Write Operations
– 1.65-1.95V
• Serial Interface Architecture
– SPI Compatible: Mode 0 and Mode 3
• High Speed Clock Frequency
– 75 MHz
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Ultra-Low Power Consumption:
– Active Read Current: 2 mA (typical @ 33 MHz)
– Standby Current: 5 µA (typical)
• Flexible Erase Capability
– Uniform 4 KByte sectors
– Uniform 32 KByte overlay blocks
– Uniform 64 KByte overlay blocks
• Fast Erase and Byte-Program:
– Chip-Erase Time: 35 ms (typical)
– Sector-/Block-Erase Time: 18 ms (typical)
– Byte-Program Time: 14 µS (typical)
• Auto Address Increment (AAI) Programming
– Decrease total chip programming time over
Byte-Program operations
• End-of-Write Detection
– Software polling the BUSY bit in Status Register
– Busy Status readout on SO pin
• Reset Pin (RST#) or Programmable Hold Pin
(HOLD#) option
– Hardware Reset pin as default
– Hold pin option to suspend a serial sequence
without deselecting the device
• Write Protection (WP#)
– Enables/Disables the Lock-Down function of the
status register
• Software Write Protection
– Write protection through Block-Protection bits in
status register
• Temperature Range
– Industrial: -40°C to +85°C
• Packages Available
– 8-lead SOIC (150 mils)
– 8-bump XFBGA
• All devices are RoHS compliant
PRODUCT DESCRIPTION
The SST25WF080 is a member of the Serial Flash 25
Series family and features a four-wire, SPI-compatible
interface that allows for a low pin-count package which
occupies less board space and ultimately lowers total system costs. SST25WF080 SPI serial flash memory is manufactured with SST proprietary, high-performance CMOS
SuperFlash technology. The split-gate cell design and
thick-oxide tunneling injector attain better reliability and
manufacturability compared with alternate approaches.
The SST25WF080 significantly improves performance and
reliability, while lowering power consumption. The device
writes (Program or Erase) with a single power supply of
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1.65-1.95V for SST25WF080. The total energy consumed
is a function of the applied voltage, current, and time of
application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a
shorter erase time, the total energy consumed during any
Erase or Program operation is less than alternative flash
memory technologies.
The SST25WF080 is offered in both an 8-lead, 150 mils
SOIC package and an 8-bump XFBGA package. See Figures 2 and 3 for the pin assignments.
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
8Mbit 1.8V SPI Serial Flash
SST25WF080
Advance Information
X - Decoder
Address
Buffers
and
Latches
SuperFlash
Memory
Y - Decoder
I/O Buffers
and
Data Latches
Control Logic
Serial Interface
CE#
SCK
SI
SO
WP#
RST#/HOLD#
1203 F01.0
Note: In AAI mode, the SO pin functions as an RY/BY# pin when configured as a ready/busy
status pin. See “End-of-Write Detection” on page 12 for more information.
FIGURE 1: Functional Block Diagram
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8Mbit 1.8V SPI Serial Flash
SST25WF080
Advance Information
PIN DESCRIPTION
Top View
CE#
1
8
VDD
SO
2
7
RST#/HOLD#
WP#
3
6
SCK
VSS
4
5
SI
1203.25WF 08-soic-P0.0
FIGURE 2: Pin Assignment for 8-Lead SOIC
Top View
(Balls Facing Down)
2
SI
SCK
RST#/
HOLD#
VDD
VSS
WP#
SO
CE#
A
B
C
D
1
1328.25WF 8-xfbga P1.0
FIGURE 3: Pin Assignment for 8-bump XFBGA
TABLE 1: Pin Description
Symbol
SCK
Pin Name
Serial Clock
SI
Serial Data Input
SO
Serial Data Output
CE#
Chip Enable
WP#
RST#/HOLD#
Write Protect
Reset
Hold
VDD
VSS
Power Supply
Ground
Functions
To provide the timing of the serial interface.
Commands, addresses, or input data are latched on the rising edge of the clock input,
while output data is shifted out on the falling edge of the clock input.
To transfer commands, addresses, or data serially into the device.
Inputs are latched on the rising edge of the serial clock.
To transfer data serially out of the device.
Data is shifted out on the falling edge of the serial clock.
Flash busy status pin in AAI mode if SO is configured as a hardware RY/BY# pin. See
“End-of-Write Detection” on page 12 for more information.
The device is enabled by a high to low transition on CE#. CE# must remain low for the
duration of any command sequence.
The Write Protect (WP#) pin is used to enable/disable BPL bit in the status register.
To reset the operation of the device and the internal logic. The device powers on with
RST# pin functionality as default.
To temporarily stop serial communication with SPI Flash memory while device is
selected. This is selected by an instruction sequence; see “Reset/Hold Mode” on page 5.
To provide power supply voltage: 1.65-1.95V for SST25WF080
T1.0 1203
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8Mbit 1.8V SPI Serial Flash
SST25WF080
Advance Information
MEMORY ORGANIZATION
The SST25WF080 support both Mode 0 (0,0) and Mode 3
(1,1) of SPI bus operations. The difference between the
two modes, as shown in Figure 4, is the state of the SCK
signal when the bus master is in Stand-by mode and no
data is being transferred. The SCK signal is low for Mode 0
and SCK signal is high for Mode 3. For both modes, the
Serial Data In (SI) is sampled at the rising edge of the SCK
clock signal and the Serial Data Output (SO) is driven after
the falling edge of the SCK clock signal.
The SST25WF080 SuperFlash memory arrays are organized in uniform 4 KByte sectors with 16 KByte, 32 KByte,
and 64 KByte overlay erasable blocks.
DEVICE OPERATION
The SST25WF080 are accessed through the SPI (Serial
Peripheral Interface) bus compatible protocol. The SPI bus
consist of four control lines; Chip Enable (CE#) is used to
select the device, and data is accessed through the Serial
Data Input (SI), Serial Data Output (SO), and Serial Clock
(SCK).
CE#
SCK
SI
MODE 3
MODE 3
MODE 0
MODE 0
Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0
MSB
SO
HIGH IMPEDANCE
DON'T CARE
Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0
MSB
1203 F03.0
FIGURE 4: SPI Protocol
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8Mbit 1.8V SPI Serial Flash
SST25WF080
Advance Information
Reset/Hold Mode
mode. The RST# pin must be driven low for a minimum of
TRST time to reset the device. The SO pin is in high impedance state while the device is in reset. A successful reset will
reset the status register to its power-up state. See Table 4
for default power-up modes. A device reset during an active
Program or Erase operation aborts the operation and data
of the targeted address range may be corrupted or lost due
to the aborted erase or program operation. The device exits
AAI Programming Mode in progress and places the SO pin
in high impedance state.
The RST#/HOLD# pin provides either a hardware reset or
a hold pin. From power-on, the RST#/HOLD# pin defaults
as a hardware reset pin (RST#). The Hold mode for this pin
is a user selected option where an Enable-Hold instruction
enables the Hold mode. Once selected as a hold pin
(HOLD#), the RST#/HOLD# pin will be configured as a
HOLD# pin, and goes back to RST# pin only after a poweroff and power-on sequence.
Reset
If the RST#/HOLD# pin is used as a reset pin, RST# pin
provides a hardware method for resetting the device. Driving
the RST# pin high puts the device in normal operating
CE#
TRECR
TRECP
TRECE
SCK
TRST
RST#
TRHZ
SO
SI
1203 F04.0
FIGURE 5: Reset Timing Diagram
TABLE 2: Reset Timing Parameters
Symbol
Parameter
Min
TRST1
Reset Pulse Width
100
Max
Units
TRHZ
Reset to High-Z Output
107
ns
TRECR
Reset Recovery from Read
100
ns
TRECP
Reset Recovery from Program
10
µs
TRECE
Reset Recovery from Erase
1
ms
ns
T2.1203
1. For reset while in a Programming or Erase mode, the reset pulse must be >5µs
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8Mbit 1.8V SPI Serial Flash
SST25WF080
Advance Information
Hold
Hold mode when the SCK next reaches the active low
state. Similarly, if the rising edge of the HOLD# signal does
not coincide with the SCK active low state, then the device
exits Hold mode when the SCK next reaches the active low
state. See Figure 6 for Hold Condition waveform.
The Hold operation enables the hold pin functionality of the
RST#/HOLD# pin. Once set to hold pin mode, the RST#/
HOLD# pin continues functioning as a hold pin until the
device is powered off and then powered on. After a poweroff and power-on, the pin functionality returns to a reset pin
(RST#) mode. See “Enable-Hold (EHLD)” on page 18 for
detailed timing of the Hold instruction.
Once the device enters Hold mode, SO will be in highimpedance state while SI and SCK can be VIL or VIH.
In the hold mode, serial sequences underway with the SPI
Flash memory are paused without resetting the clocking
sequence. To activate the HOLD# mode, CE# must be in
active low state. The HOLD# mode begins when the SCK
active low state coincides with the falling edge of the
HOLD# signal. The Hold mode ends when the rising edge
of the HOLD# signal coincides with the SCK active low
state. If the falling edge of the HOLD# signal does not coincide with the SCK active low state, then the device enters
If CE# is driven active high during a Hold condition, the
device returns to standby mode. The device can then be
re-initiated with the command sequences listed in Table 6.
As long as HOLD# signal is low, the memory remains in
the Hold condition. To resume communication with the
device, HOLD# must be driven active high, and CE# must
be driven active low. See Figure 6 for Hold timing.
SCK
HOLD#
Active
Hold
Active
Hold
Active
1203 F05.0
FIGURE 6: Hold Condition Waveform
Write Protection
Write Protect Pin (WP#)
SST25WF080 provide software Write protection. The
Write Protect pin (WP#) enables or disables the lock-down
function of the status register. The Block-Protection bits
(BP3, BP2, BP1, BP0, and BPL) in the status register provide Write protection to the memory array and the status
register. See Table 5 for the Block-Protection description.
The Write Protect (WP#) pin enables the lock-down function of the BPL bit (bit 7) in the status register. When WP#
is driven low, the execution of the Write-Status-Register
(WRSR) instruction is determined by the value of the BPL
bit (see Table 3). When WP# is high, the lock-down function of the BPL bit is disabled.
TABLE 3: Conditions to execute Write-Status-Register (WRSR) Instruction
WP#
BPL
Execute WRSR Instruction
L
1
Not Allowed
L
0
Allowed
H
X
Allowed
T3.0 1203
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8Mbit 1.8V SPI Serial Flash
SST25WF080
Advance Information
Status Register
Program operation, the status register may be read only to
determine the completion of an operation in progress.
Table 4 describes the function of each bit in the software
status register.
The software status register provides status on whether the
flash memory array is available for any Read or Write operation, whether the device is Write enabled, and the state of
the Memory Write protection. During an internal Erase or
TABLE 4: Software Status Register
Default at
Power-up
Read/Write
1 = Internal Write operation is in progress
0 = No internal Write operation is in progress
0
R
WEL
1 = Device is memory Write enabled
0 = Device is not memory Write enabled
0
R
2
BP0
Indicate current level of block write protection (See Table 5)
1
R/W
3
BP1
Indicate current level of block write protection (See Table 5)
1
R/W
4
BP2
Indicate current level of block write protection (See Table 5)
1
R/W
5
BP3
Indicate current level of block write protection (See Table 5)
0
R/W
6
AAI
Auto Address Increment Programming status
1 = AAI programming mode
0 = Byte-Program mode
0
R
7
BPL
1 = BP3, BP2, BP1 and BP0 are read-only bits
0 = BP3, BP2, BP1 and BP0 are read/writable
0
R/W
Bit
Name
Function
0
BUSY
1
T4.1 1203
Busy
Auto Address Increment (AAI)
The Busy bit determines whether there is an internal Erase
or Program operation in progress. A ‘1’ for the Busy bit indicates the device is busy with an operation in progress. A ‘0’
indicates the device is ready for the next valid operation.
The Auto Address Increment Programming-Status bit provides status on whether the device is in AAI programming
mode or Byte-Program mode. The default at power up is
Byte-Program mode.
Write Enable Latch (WEL)
The Write-Enable-Latch bit indicates the status of the internal Write-Enable-Latch memory. If the WEL bit is set to ‘1’,
it indicates the device is Write enabled. If the bit is set to ‘0’
(reset), it indicates the device is not Write enabled and
does not accept any Write (Program/Erase) commands.
The Write-Enable-Latch bit is automatically reset under the
following conditions:
•
•
•
•
•
•
•
•
•
Device Reset
Power-up
Write-Disable (WRDI) instruction completion
Byte-Program instruction completion
Auto Address Increment (AAI) programming is
completed or reached its highest unprotected
memory address
Sector-Erase instruction completion
Block-Erase instruction completion
Chip-Erase instruction completion
Write-Status-Register instructions
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8Mbit 1.8V SPI Serial Flash
SST25WF080
Advance Information
Block-Protection (BP3, BP2, BP1, BP0)
Block Protection Lock-Down (BPL)
The Block-Protection (BP3, BP2, BP1, BP0) bits define the
size of the memory area to be software protected against
any memory Write (Program or Erase) operation, see
Table 5. The Write-Status-Register (WRSR) instruction is
used to program the BP3, BP2, BP1 and BP0 bits as long
as WP# is high or the Block-Protect-Lock (BPL) bit is ‘0’.
Chip-Erase can only be executed if Block-Protection bits
are all ‘0’. After power-up, BP3, BP2, BP1 and BP0 are set
to defaults. See Table 4 for defaults at power-up.
When the WP# pin is driven low (VIL), it enables the BlockProtection-Lock-Down (BPL) bit. When BPL is set to ‘1’, it
prevents any further alteration of the BPL, BP3, BP2, BP1,
and BP0 bits. When the WP# pin is driven high (VIH), the
BPL bit has no effect and its value is ‘Don’t Care’. After
power-up, the BPL bit is reset to ‘0’.
TABLE 5: Software Status Register Block Protection for SST25WF080
Status Register Bit
Protection Level
BP31
BP22
BP12
Protected Memory Address
BP02
8 Mbit
None
X
0
0
0
None
1 (Upper 16th Memory, Blocks 30 and 31)
X
0
0
1
F0000H-FFFFFH
2 (Upper 8th Memory, Blocks 28 to 31)
X
0
1
0
E0000H-FFFFFH
3 (Upper Quarter Memory, Blocks 24 to 31)
X
0
1
1
C0000H-FFFFFH
4 (Upper Half Memory, Blocks 16 to 31)
X
1
0
0
80000H-FFFFFH
5 (Full Memory, Blocks 0 to 31)
X
1
0
1
00000H-FFFFFH
X
1
1
0
X
1
1
1
T5.1 1203
1. X = Don’t Care (Reserved), default is ‘0’.
2. Default at power-up for BP2, BP1 and BP0 is ‘11’.
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8Mbit 1.8V SPI Serial Flash
SST25WF080
Advance Information
INSTRUCTIONS
significant bit. CE# must be driven low before an instruction
is entered and must be driven high after the last bit of the
instruction has been shifted in (except for Read, Read-ID,
and Read-Status-Register instructions). Any low-to-high
transition on CE#, before receiving the last bit of an instruction bus cycle, will terminate the instruction in progress and
return the device to standby mode. Instruction commands
(Op Code), addresses, and data are all input from the most
significant bit (MSB) first.
Instructions are used to read, write (Erase and Program),
and configure the SST25WF080. The instruction bus
cycles are 8 bits each for commands (Op Code), data, and
addresses. The Write-Enable (WREN) instruction must be
executed prior to Byte-Program, Auto Address Increment
(AAI) programming, Sector-Erase, Block-Erase, Write-Status-Register, or Chip-Erase instructions. The complete
instructions are provided in Table 6. All instructions are synchronized off a high-to-low transition of CE#. Inputs will be
accepted on the rising edge of SCK starting with the most
TABLE 6: Device Operation Instructions for SST25WF080
Instruction
Description
Op Code Cycle1
Address
Cycle(s)2
Dummy
Data
Maximum
Cycle(s) Cycle(s) Frequency
Read
Read Memory
0000 0011b (03H)
3
0
1 to ∞
High-Speed Read
Read Memory at Higher Speed
0000 1011b (0BH)
3
1
1 to ∞
4 KByte Sector-Erase3 Erase 4 KByte of memory array
0010 0000b (20H)
3
0
0
32 KByte Block-Erase4 Erase 32 KByte block
of memory array
0101 0010b (52H)
3
0
0
64 KByte Block-Erase5 Erase 64 KByte block
of memory array
1101 1000b (D8H)
3
0
0
Chip-Erase
Erase Full Memory Array
0110 0000b (60H) or
1100 0111b (C7H)
0
0
0
Byte-Program
To Program One Data Byte
0000 0010b (02H)
3
0
1
AAI-Word-Program6
Auto Address Increment
Programming
1010 1101b (ADH)
3
0
2 to ∞
RDSR7
Read-Status-Register
0000 0101b (05H)
0
0
1 to ∞
EWSR8
Enable-Write-Status-Register
0110 0000b (50H)
0
0
0
WRSR
Write-Status-Register
0000 0001b (01H)
0
0
1
WREN8
Write-Enable
0000 0110b (06H)
0
0
0
WRDI
Write-Disable
0000 0100b (04H)
0
0
0
RDID9
Read-ID
1001 0000b (90H) or
1010 1011b (ABH)
3
0
1 to ∞
EBSY
Enable SO to output RY/BY# sta- 0111 0000b (70H)
tus during AAI programming
0
0
0
DBSY
Disable SO to output RY/BY# sta- 1000 0000b (80H)
tus during AAI programming
0
0
0
JEDEC-ID
JEDEC ID read
1001 1111b (9FH)
0
0
3 to ∞
EHLD
Enable HOLD# pin functionality of 1010 1010b (AAH)
the RST#/HOLD# pin
0
0
0
33 MHz
75 MHz
T6.0 1203
1.
2.
3.
4.
5.
6.
One bus cycle is eight clock periods.
Address bits above the most significant bit of each density can be VIL or VIH.
4 KByte Sector-Erase addresses: use AMS-A12, remaining addresses are don’t care but must be set either at VIL or VIH.
32 KByte Block-Erase addresses: use AMS-A15, remaining addresses are don’t care but must be set either at VIL or VIH.
64 KByte Block-Erase addresses: use AMS-A16, remaining addresses are don’t care but must be set either at VIL or VIH.
To continue programming to the next sequential address location, enter the 8-bit command, ADH, followed by 2 bytes of data to be
programmed. Data Byte 0 will be programmed into the initial address [A23-A1] with A0=0, Data Byte 1 will be programmed into the
initial address [A23-A1] with A0 = 1.
7. The Read-Status-Register is continuous with ongoing clock cycles until terminated by a low to high transition on CE#.
8. Either EWSR or WREN followed by WRSR will write to the Status register. The EWSR-WRSR sequence provides backward compatibility to the SST25VF/LF series. The WREN-WRSR sequence is recommended for new designs.
9. Manufacturer’s ID is read with A0=0, and Device ID is read with A0=1. All other address bits are 00H. The Manufacturer’s ID and
device ID output stream is continuous until terminated by a low-to-high transition on CE#.
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8Mbit 1.8V SPI Serial Flash
SST25WF080
Advance Information
Read (33 MHz)
around) of the address space. For example, for 8 Mbit density, once the data from the address location FFFFFH is
read, the next output is from address location 000000H.
The Read instruction is initiated by executing an 8-bit command, 03H, followed by address bits A23-A0. CE# must
remain active low for the duration of the Read cycle. See
Figure 7 for the Read sequence.
The Read instruction, 03H, supports up to 33 MHz Read.
The device outputs a data stream starting from the specified address location. The data stream is continuous
through all addresses until terminated by a low-to-high transition on CE#. The internal address pointer automatically
increments until the highest memory address is reached.
Once the highest memory address is reached, the address
pointer automatically increments to the beginning (wrap-
CE#
MODE 3
SCK
0 1 2 3 4 5 6 7 8
23 24
15 16
31 32
39 40
47
48
55 56
63 64
70
MODE 0
ADD.
03
SI
ADD.
ADD.
MSB
MSB
N
DOUT
HIGH IMPEDANCE
SO
N+1
DOUT
N+2
DOUT
N+3
DOUT
N+4
DOUT
MSB
1203 F06.0
FIGURE 7: Read Sequence
High-Speed-Read (75 MHz)
addresses until terminated by a low-to-high transition on
CE#. The internal address pointer will automatically increment until the highest memory address is reached. Once
the highest memory address is reached, the address
pointer will automatically increment to the beginning (wraparound) of the address space. For example, for 2 Mbit density, once the data from address location 7FFFFH is read,
the next output will be from address location 000000H.
The High-Speed-Read instruction supporting up to 75 MHz
Read is initiated by executing an 8-bit command, 0BH, followed by address bits [A23-A0] and a dummy byte. CE#
must remain active low for the duration of the High-SpeedRead cycle. See Figure 8 for the High-Speed-Read
sequence.
Following a dummy cycle, the High-Speed-Read instruction outputs the data starting from the specified address
location. The data output stream is continuous through all
CE#
MODE 3
SCK
0 1 2 3 4 5 6 7 8
15 16
23 24
31 32
39 40
47 48
55 56
63 64
80
71 72
MODE 0
0B
SI
ADD.
ADD.
ADD.
X
MSB
SO
N
DOUT
HIGH IMPEDANCE
MSB
N+1
DOUT
N+2
DOUT
N+3
DOUT
N+4
DOUT
1203 F07.0
FIGURE 8: High-Speed-Read Sequence
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8Mbit 1.8V SPI Serial Flash
SST25WF080
Advance Information
Byte-Program
Program instruction is initiated by executing an 8-bit command, 02H, followed by address bits [A23-A0]. Following the
address, the data is input in order from MSB (bit 7) to LSB
(bit 0). CE# must be driven high before the instruction is
executed. The user may poll the Busy bit in the software
status register or wait TBP for the completion of the internal
self-timed Byte-Program operation. See Figure 9 for the
Byte-Program sequence.
The Byte-Program instruction programs the bits in the
selected byte to the desired data. The selected byte must
be in the erased state (FFH) when initiating a Program
operation. A Byte-Program instruction applied to a protected memory area will be ignored.
Prior to any Write operation, the Write-Enable (WREN)
instruction must be executed. CE# must remain active low
for the duration of the Byte-Program instruction. The Byte-
CE#
MODE 3
SCK
0 1 2 3 4 5
6 7 8
15 16
23 24
31 32
39
MODE 0
SI
02
ADD.
ADD.
MSB
SO
ADD.
DIN
MSB LSB
HIGH IMPEDANCE
1203 F08.0
FIGURE 9: Byte-Program Sequence
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8Mbit 1.8V SPI Serial Flash
SST25WF080
Advance Information
Auto Address Increment (AAI) Word-Program
Hardware End-of-Write Detection
The AAI program instruction allows multiple bytes of data to
be programmed without re-issuing the next sequential
address location. This feature decreases total programming time when multiple bytes or the entire memory array
is to be programmed. An AAI Word program instruction
pointing to a protected memory area will be ignored. The
selected address range must be in the erased state (FFH)
when initiating an AAI Word Program operation. While
within AAI Word Programming sequence, the only valid
instructions are AAI Word (ADH), RDSR (05H), or WRDI
(04H). Users have three options to determine the completion of each AAI Word program cycle: hardware detection
by reading the Serial Output, software detection by polling
the BUSY bit in the software status register or wait TBP.
Refer to End-Of-Write Detection section for details.
The Hardware End-of-Write detection method eliminates
the overhead of polling the Busy bit in the Software Status
Register during an AAI Word program operation. The 8-bit
command, 70H, configures the Serial Output (SO) pin to
indicate Flash Busy status during AAI Word programming,
as shown in Figure 10. The 8-bit command, 70H, must be
executed prior to executing an AAI Word-Program instruction. Once an internal programming operation begins,
asserting CE# will immediately drive the status of the internal flash status on the SO pin. A ‘0’ indicates the device is
busy and a ‘1’ indicates the device is ready for the next
instruction. De-asserting CE# will return the SO pin to tristate.
The 8-bit command, 80H, disables the Serial Output (SO)
pin to output busy status during AAI-Word-program operation, and re-configures SO as an output pin. In this state,
the SO pin will function as a normal Serial Output pin. At
this time, the RDSR command can poll the status of the
Software Status Register. This is shown in Figure 11.
Prior to any write operation, the Write-Enable (WREN)
instruction must be executed. The AAI Word Program
instruction is initiated by executing an 8-bit command,
ADH, followed by address bits [A23-A0]. Following the
addresses, two bytes of data are input sequentially, each
one from MSB (Bit 7) to LSB (Bit 0). The first byte of data
(D0) will be programmed into the initial address [A23-A1]
with A0 = 0, the second byte of Data (D1) will be programmed into the initial address [A23-A1] with A0 = 1. CE#
must be driven high before the AAI Word Program instruction is executed. The user must check the BUSY status
before entering the next valid command. Once the device
indicates it is no longer busy, data for the next two sequential addresses may be programmed and so on. When the
last desired byte had been entered, check the busy status
using the hardware method or the RDSR instruction and
execute the Write-Disable (WRDI) instruction, 04H, to terminate AAI. Check the busy status after WRDI to determine if the device is ready for any command. See Figures
12 and 13 for AAI Word programming sequence.
CE#
MODE 3
SCK
0 1 2 3 4 5 6 7
MODE 0
70
SI
MSB
SO
HIGH IMPEDANCE
1203 F09.0
FIGURE 10: Enable SO as Hardware RY/BY#
during AAI Programming
There is no wrap mode during AAI programming; once the
highest unprotected memory address is reached, the
device will exit AAI operation and reset the Write-EnableLatch bit (WEL = 0) and the AAI bit (AAI = 0).
CE#
MODE 3
SCK
0 1 2 3 4 5 6 7
MODE 0
End-of-Write Detection
80
SI
There are three methods to determine completion of a program cycle during AAI Word programming: hardware
detection by reading the Serial Output, software detection
by polling the BUSY bit in the Software Status Register or
wait TBP.
MSB
SO
HIGH IMPEDANCE
1203 F10.0
FIGURE 11: Disable SO as Hardware RY/BY#
during AAI Programming
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8Mbit 1.8V SPI Serial Flash
SST25WF080
Advance Information
CE#
MODE 3
SCK
0
7 8
15 16
23 24
31 32
39 40
47
0
7 8
15 16
23
0
7 8
15 16
23
0
7
0
7 8
15
MODE 0
AD
SI
A
A
A
D0
D1
AD
D2
D3
AD
Dn-1
Dn
Last 2
Data Bytes
Load AAI command, Address, 2 bytes data
WRDI
RDSR
WDRI to exit
AAI Mode
SO
DOUT
Wait TBP or poll
Software Status register
to load any command
Check for Flash Busy Status to load next valid1 command
Note:
1. Valid commands during AAI programming: AAI command or WRDI command
2. User must configure the SO pin to output Flash Busy status during AAI programming
1203 F11.0
FIGURE 12: Auto Address Increment (AAI) Word Program Sequence
with Hardware End-of-Write Detection
Wait TBP or poll Software Status
register to load next valid1 command
CE#
MODE 3
SCK
SI
0
7 8
15 16 23 24
31 32 39 40 47
0
7 8
15 16 23
0
7 8
15 16 23
0
7
0
7 8
15
MODE 0
AD
A
A
A
D0
D1
AD
D2
D3
AD
Dn-1
Last 2
Data Bytes
Load AAI command, Address, 2 bytes data
Dn
WRDI
RDSR
WDRI to exit
AAI Mode
DOUT
SO
Note:
1. Valid commands during AAI programming: AAI command or WRDI command
Wait TBP or poll
Software Status register
to load any command
1203 F12.0
FIGURE 13: Auto Address Increment (AAI) Word Program Sequence
with Software End-of-Write Detection
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8Mbit 1.8V SPI Serial Flash
SST25WF080
Advance Information
Sector-Erase
The Sector-Erase instruction clears all bits in the selected 4
KByte sector to FFH. A Sector-Erase instruction applied to
a protected memory area will be ignored. Prior to any Write
operation, the Write-Enable (WREN) instruction must be
executed. CE# must remain active low for the duration of
any command sequence. The Sector-Erase instruction is
initiated by executing an 8-bit command, 20H, followed by
address bits [A23-A0]. Address bits [AMS-A12] (AMS = Most
Significant address) are used to determine the sector
address (SAX), remaining address bits can be VIL or VIH.
CE# must be driven high before the instruction is executed.
The user may poll the Busy bit in the software status register or wait TSE for the completion of the internal self-timed
Sector-Erase cycle. See Figure 14 for the Sector-Erase
sequence.
CE#
MODE 3
SCK
0 1 2 3 4 5 6 7 8
15 16
23 24
31
MODE 0
ADD.
20
SI
MSB
ADD.
ADD.
MSB
SO
HIGH IMPEDANCE
1203 F13.0
FIGURE 14: Sector-Erase Sequence
32-KByte Block-Erase
address bits [A23-A0]. Address bits [AMS-A15] (AMS = Most
Significant Address) are used to determine block address
(BAX), remaining address bits can be VIL or VIH. CE# must
be driven high before the instruction is executed. Poll the
Busy bit in the software status register or wait TBE for the
completion of the internal self-timed Block-Erase. See Figure 15 for the Block-Erase sequences.
The Block-Erase instruction clears all bits in the selected 32
KByte block to FFH. A Block-Erase instruction applied to a
protected memory area is ignored. Prior to any Write operation, the Write-Enable (WREN) instruction must be executed. CE# must remain active low for the duration of any
command sequence. The Block-Erase instruction is initiated by executing an 8-bit command, 52H, followed by
CE#
MODE 3
SCK
0 1 2 3 4 5 6 7 8
15 16
23 24
31
MODE 0
ADDR
52
SI
MSB
SO
ADDR
ADDR
MSB
HIGH IMPEDANCE
1203 F14.0
FIGURE 15: 32-KByte Block-Erase Sequence
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8Mbit 1.8V SPI Serial Flash
SST25WF080
Advance Information
64-KByte Block-Erase
address bits [A23-A0]. Address bits [AMS-A16] (AMS = Most
Significant Address) are used to determine block address
(BAX), remaining address bits can be VIL or VIH. CE# must
be driven high before the instruction is executed. Poll the
Busy bit in the software status register or wait TBE for the
completion of the internal self-timed Block-Erase. See Figure 16 for the Block-Erase sequences.
The Block-Erase instruction clears all bits in the selected 64
KByte block to FFH. A Block-Erase instruction applied to a
protected memory area is ignored. Prior to any Write operation, the Write-Enable (WREN) instruction must be executed. CE# must remain active low for the duration of any
command sequence. The Block-Erase instruction is initiated by executing an 8-bit command, D8H, followed by
CE#
MODE 3
SCK
0 1 2 3 4 5 6 7 8
15 16
23 24
31
MODE 0
ADDR
D8
SI
MSB
ADDR
ADDR
MSB
SO
HIGH IMPEDANCE
1203 F15.0
FIGURE 16: 64-KByte Block-Erase Sequence
Chip-Erase
by executing an 8-bit command, 60H or C7H. CE# must be
driven high before the instruction is executed. The user may
poll the Busy bit in the software status register or wait TCE
for the completion of the internal self-timed Chip-Erase
cycle. See Figure 17 for the Chip-Erase sequence.
The Chip-Erase instruction clears all bits in the device to
FFH. A Chip-Erase instruction is ignored if any of the memory area is protected. Prior to any Write operation, the
Write-Enable (WREN) instruction must be executed. CE#
must remain active low for the duration of the Chip-Erase
instruction sequence. The Chip-Erase instruction is initiated
CE#
MODE 3
SCK
0 1 2 3 4 5 6 7
MODE 0
60 or C7
SI
MSB
SO
HIGH IMPEDANCE
1203 F16.0
FIGURE 17: Chip-Erase Sequence
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8Mbit 1.8V SPI Serial Flash
SST25WF080
Advance Information
Read-Status-Register (RDSR)
the device. CE# must be driven low before the RDSR
instruction is entered and remain low until the status data is
read. Read-Status-Register is continuous with ongoing
clock cycles until it is terminated by a low to high transition
of the CE#. See Figure 18 for the RDSR instruction
sequence.
The Read-Status-Register (RDSR) instruction, 05H, allows
reading of the status register. The status register may be
read at any time even during a Write (Program/Erase)
operation. When a Write operation is in progress, the Busy
bit may be checked before sending any new commands to
assure that the new commands are properly received by
CE#
MODE 3
SCK
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
MODE 0
05
SI
MSB
SO
HIGH IMPEDANCE
Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0
MSB
Status
Register Out
1203 F17.0
FIGURE 18: Read-Status-Register (RDSR) Sequence
Write-Enable (WREN)
the Write-Enable-Latch bit in the Status Register will be
cleared upon the rising edge CE# of the WRSR instruction.
CE# must be driven high before the WREN instruction is
executed. See Figure 19 for the WREN instruction
sequence.
The Write-Enable (WREN) instruction, 06H, sets the WriteEnable-Latch bit in the Status Register to 1 allowing Write
operations to occur. The WREN instruction must be executed prior to any Write (Program/Erase) operation. The
WREN instruction may also be used to allow execution of
the Write-Status-Register (WRSR) instruction; however,
CE#
MODE 3
SCK
0 1 2 3 4 5 6 7
MODE 0
06
SI
MSB
SO
HIGH IMPEDANCE
1203 F18.0
FIGURE 19: Write Enable (WREN) Sequence
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8Mbit 1.8V SPI Serial Flash
SST25WF080
Advance Information
Write-Disable (WRDI)
program operation in progress may continue up to TBP after
executing the WRDI instruction. CE# must be driven high
before the WRDI instruction is executed. See Figure 20 for
the WRDI instruction sequence.
The Write-Disable (WRDI) instruction, 04H, resets the
Write-Enable-Latch bit and AAI to 0 disabling any new
Write operations from occurring. The WRDI instruction will
not terminate any programming operation in progress. Any
CE#
MODE 3
SCK
0 1 2 3 4 5 6 7
MODE 0
04
SI
MSB
SO
HIGH IMPEDANCE
1203 F19.0
FIGURE 20: Write Disable (WRDI) Sequence
Enable-Write-Status-Register (EWSR)
sequence of the WRSR instruction is entered and driven
high before the WRSR instruction is executed. See Figure
21 for EWSR or WREN and WRSR instruction sequences.
The Enable-Write-Status-Register (EWSR) instruction
arms the Write-Status-Register (WRSR) instruction and
opens the status register for alteration. The Write-StatusRegister instruction must be executed immediately after the
execution of the Enable-Write-Status-Register instruction.
This two-step instruction sequence of the EWSR instruction followed by the WRSR instruction works like SDP (software data protection) command structure which prevents
any accidental alteration of the status register values. CE#
must be driven low before the EWSR instruction is entered
and must be driven high before the EWSR instruction is
executed. See Figure 21 for EWSR instruction followed by
WRSR instruction.
Executing the Write-Status-Register instruction will be
ignored when WP# is low and BPL bit is set to ‘1’. When
the WP# is low, the BPL bit can only be set from ‘0’ to ‘1’ to
lock-down the status register, but cannot be reset from ‘1’ to
‘0’. When WP# is high, the lock-down function of the BPL
bit is disabled and the BPL, BP0, BP1, BP2, and BP3 bits
in the status register can all be changed. As long as BPL bit
is set to ‘0’ or WP# pin is driven high (VIH) prior to the lowto-high transition of the CE# pin at the end of the WRSR
instruction, the bits in the status register can all be altered
by the WRSR instruction. In this case, a single WRSR
instruction can set the BPL bit to ‘1’ to lock down the status
register as well as altering the BP0, BP1, BP2, and BP3
bits at the same time. See Table 3 for a summary description of WP# and BPL functions.
Write-Status-Register (WRSR)
The Write-Status-Register instruction writes new values to
the BP3, BP2, BP1, BP0, and BPL bits of the status register. CE# must be driven low before the command
CE#
MODE 3
SCK
0 1 2 3 4 5 6 7
MODE 0
MODE 3
MODE 0
50 or 06
SI
01
MSB
SO
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
MSB
STATUS
REGISTER IN
7 6 5 4 3 2 1 0
MSB
HIGH IMPEDANCE
1203 F20.0
FIGURE 21: Enable-Write-Status-Register (EWSR) or Write-Enable (WREN) and Write-Status-Register
(WRSR) Sequence
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8Mbit 1.8V SPI Serial Flash
SST25WF080
Advance Information
Enable-Hold (EHLD)
The 8-bit command, AAH, Enable-Hold instruction enables
the HOLD functionality of the RST#/HOLD# pin. CE# must
remain active low for the duration of the Enable-Hold
instruction sequence. CE# must be driven high before the
instruction is executed. See Figure 22 for the Enable-Hold
instruction sequence.
CE#
MODE 3
SCK
0 1 2 3 4 5 6 7
MODE 0
AA
SI
MSB
SO
HIGH IMPEDANCE
1203 F21.0
FIGURE 22: Enable-Hold Sequence
Read-ID
TABLE 7: Product Identification
The Read-ID instruction identifies the manufacturer as SST
and the device as SST25WF080. Use the Read-ID instruction to identify SST device when using multiple manufacturers in the same socket. See Table 7.
The device information is read by executing an 8-bit command, 90H or ABH, followed by address bits [A23-A0]. Following the Read-ID instruction, the manufacturer’s ID is
located in address 000000H and the device ID is located in
address 000001H. Once the device is in Read-ID mode,
the manufacturer’s and device ID output data toggles
between address 000000H and 000001H until terminated
by a low to high transition on CE#.
Address
Data
Manufacturer’s ID
000000H
BFH
Device ID
SST25WF080
000001H
05H
T7.1203
CE#
MODE 3
SCK
0 1 2 3 4 5 6 7 8
23 24
15 16
31 32
39 40
47 48
55 56
63
MODE 0
90 or AB
SI
00
MSB
00
ADD
MSB
HIGH IMPEDANCE
SO
BF
Device ID
BF
Device ID
HIGH
IMPEDANCE
MSB
Note: 1. The manufacturer's and device ID output stream is continuous until terminated by a low to high transition on CE#.
2. 00H will output the manfacturer's ID first and 01H will output device ID first before toggling between the two.
1203 F22.0
FIGURE 23: Read-ID Sequence
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8Mbit 1.8V SPI Serial Flash
SST25WF080
Advance Information
JEDEC Read-ID
the type of memory in the first byte and the memory capacity of the device in the second byte. See Figure 24 for the
instruction sequence. The JEDEC Read ID instruction is
terminated by a low to high transition on CE# at any time
during data output.
The JEDEC Read-ID instruction identifies the device as
SST25WF080 and the manufacturer as SST. The device
information can be read from executing the 8-bit command,
9FH. Following the JEDEC Read-ID instruction, the 8-bit
manufacturer’s ID, BFH, is output from the device. After
that, a 16-bit device ID is shifted out on the SO pin. The
Device ID is assigned by the manufacturer and contains
CE#
MODE 3
SCK
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34
MODE 0
SI
SO
9F
HIGH IMPEDANCE
25
BF
MSB
05H
MSB
1203 F23.0
FIGURE 24: JEDEC Read-ID Sequence
TABLE 8: JEDEC Read-ID Data-Out
Device ID
Manufacturer’s ID (Byte 1)
BFH
Memory Type
(Byte 2)
Memory Capacity
(Byte 3)
25H
05H
T8.0 1203
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8Mbit 1.8V SPI Serial Flash
SST25WF080
Advance Information
ELECTRICAL SPECIFICATIONS
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum
Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these conditions or conditions greater than those defined in the operational sections of this data
sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)
Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0V to VDD+2.0V
Package Power Dissipation Capability (TA = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds
Output Short Circuit Current1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
1. Output shorted for no more than one second. No more than one output shorted at a time.
Operating Range
AC Conditions of Test
Range
Ambient Temp
VDD
Industrial
-40°C to +85°C
1.65-1.95V
Input Rise/Fall Time . . . . . . . . . . . . . . . 5 ns
Output Load . . . . . . . . . . . . . . . . . . . . . CL = 30 pF
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8Mbit 1.8V SPI Serial Flash
SST25WF080
Advance Information
Power-Up Specifications
All functionalities and DC specifications are specified for a VDD ramp rate of greater than 1V per 100 ms (0V to 1.8V
in less than 180 ms). If the VDD ramp rate is slower than 1V/100 ms, a hardware reset is required. The recommended VDD power-up to RESET# high time should be greater than 100 µs to ensure a proper reset. See Table 9
and Figures 25 and 26 for more information.
TABLE 9: Recommended System Power-up Timings
Symbol
Parameter
TPU-READ1
Minimum
Units
VDD Min to Read Operation
100
µs
TPU-WRITE1
VDD Min to Write Operation
100
µs
T9.0 1203
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TPU-READ
VDD min
VDD
0V
VIH
RESET#
TRECR
CE#
1203 F37.0
Note: See Table 2 on page 5 for TRECR parameter.
FIGURE 25: Power-Up Reset Diagram
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8Mbit 1.8V SPI Serial Flash
SST25WF080
Advance Information
VDD
VDD Max
Chip selection is not allowed.
Commands may not be accepted or properly
interpreted by the device.
VDD Min
TPU-READ
TPU-WRITE
Device fully accessible
Time
1203 F27.0
FIGURE 26: Power-up Timing Diagram
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8Mbit 1.8V SPI Serial Flash
SST25WF080
Advance Information
DC Characteristics
TABLE 10: DC Operating Characteristics
Limits
Typ1
Max
Units
Read Current
2
5
mA
CE#=0.1 VDD/0.9 VDD@33 MHz, SO=open
Read Current
4
9
mA
CE#=0.1 VDD/0.9VDD@75 MHz, SO=open
6
10
mA
CE#=VDD
5
20
µA
CE#=VDD, VIN=VDD or VSS
Input Leakage Current
1
µA
VIN=GND to VDD, VDD=VDD Max
Output Leakage Current
1
µA
VOUT=GND to VDD, VDD=VDD Max
0.3
V
VDD=VDD Min
V
VDD=VDD Max
V
IOL=100 µA, VDD=VDD Min
V
IOH=-100 µA, VDD=VDD Min
Symbol
Parameter
IDDR
IDDR2
IDDW
Program and Erase Current
ISB
Standby Current
ILI
ILO
VIL
Input Low Voltage
VIH
Input High Voltage
VOL
Output Low Voltage
VOH
Output High Voltage
Min
0.7 VDD
0.2
VDD-0.2
Test Conditions
T10.0 1203
1. Value characterized, not fully tested in production.
TABLE 11: Capacitance (TA = 25°C, f=1 Mhz, other pins open)
Parameter
COUT
1
CIN1
Description
Output Pin Capacitance
Input Capacitance
Test Condition
Maximum
VOUT = 0V
12 pF
VIN = 0V
6 pF
T11.0 1203
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 12: Reliability Characteristics
Symbol
NEND
1
Parameter
Minimum Specification
Units
Endurance
10,000
Cycles
JEDEC Standard A117
100
Years
JEDEC Standard A103
100 + IDD
mA
TDR1
Data Retention
ILTH1
Latch Up
Test Method
JEDEC Standard 78
T12.0 1203
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
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8Mbit 1.8V SPI Serial Flash
SST25WF080
Advance Information
AC Characteristics
TABLE 13: AC Operating Characteristics
Symbol
Parameter
Limits - 33 MHz
Limits - 75 MHz
Min
Min
Max
Max
Units
75
MHz
1
Serial Clock Frequency
TSCKH
Serial Clock High Time
13
TSCKL
Serial Clock Low Time
13
TSCKR
Serial Clock Rise Time
TSCKF
Serial Clock Fall Time
TCES2
CE# Active Setup Time
12
5
ns
TCEH2
CE# Active Hold Time
12
5
ns
TCHS2
CE# Not Active Setup Time
10
5
ns
FCLK
TCHH
2
33
6
ns
6
0.1
0.1
ns
0.1
v/ns
0.1
v/ns
CE# Not Active Hold Time
10
5
ns
TCPH
CE# High Time
50
25
ns
TCHZ
CE# High to High-Z Output
TCLZ
SCK Low to Low-Z Output
0
0
ns
TDS
Data In Setup Time
5
2
ns
TDH
Data In Hold Time
5
4
ns
THLS
HOLD# Low Setup Time
10
6
ns
THHS
HOLD# High Setup Time
10
6
ns
THLH
HOLD# Low Hold Time
15
6
ns
THHH
HOLD# High Hold Time
10
6
ns
THZ
HOLD# Low to High-Z Output
20
7
ns
TLZ
HOLD# High to Low-Z Output
20
7
ns
TOH
Output Hold from SCK Change
TV
Output Valid from SCK
12
6
ns
TSE
Sector-Erase
30
30
ms
TBE
Block-Erase
30
30
ms
TSCE
Chip-Erase
60
60
ms
Byte-Program
25
25
TBP
3
20
0
7
0
ns
ns
µs
T13.2 1203
1. Maximum clock frequency for Read instruction, 03H, is 33 MHz
2. Relative to SCK
3. AAI-Word Program TBP maximum specification is also at 25 µs maximum time
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8Mbit 1.8V SPI Serial Flash
SST25WF080
Advance Information
TCPH
CE#
TCES
TCHH
TCHS
TCEH
SCK
TDS
TDH
TSCKR
MSB
SI
LSB
HIGH-Z
HIGH-Z
SO
TSCKF
1203 F24.0
FIGURE 27: Serial Input Timing Diagram
CE#
TSCKL
TSCKH
SCK
TOH
TCLZ
SO
TCHZ
MSB
LSB
TV
SI
1203 F25.0
FIGURE 28: Serial Output Timing Diagram
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8Mbit 1.8V SPI Serial Flash
SST25WF080
Advance Information
CE#
THHH
THLS
THHS
SCK
THLH
THZ
TLZ
SO
SI
HOLD#
1203 F26.0
FIGURE 29: Hold Timing Diagram
VIHT
VHT
INPUT
VHT
REFERENCE POINTS
OUTPUT
VLT
VLT
VILT
1203 F28.0
AC test inputs are driven at VIHT (0.9VDD) for a logic ‘1’ and VILT (0.1VDD) for a logic ‘0’. Measurement reference points for
inputs and outputs are VHT (0.6VDD) and VLT (0.4VDD). Input rise and fall times (10% ↔ 90%) are <5 ns.
Note: VHT - VHIGH Test
VLT - VLOW Test
VIHT - VINPUT HIGH Test
VILT - VINPUT LOW Test
FIGURE 30: AC Input/Output Reference Waveforms
©2010 Silicon Storage Technology, Inc.
S71203-03-000
26
04/10
8Mbit 1.8V SPI Serial Flash
SST25WF080
Advance Information
PRODUCT ORDERING INFORMATION
SST
25 WF
XX XX
XXX
XXX
- 75
- XX
- 4I - SA
- XX - XX
F
X
Environmental Attribute
E1 = non-Pb
F2 = non-Pb / non-Sn contact (lead) finish:
Nickel plating with Gold top (outer) layer
Package Modifier
A = 8 leads
Package Type
Z = XFBGA
S = SOIC 150 mil body width
Temperature Range
I = Industrial = -40°C to +85°C
Minimum Endurance
4 = 10,000 cycles
Operating Frequency
75 = 75 MHz
Device Density
080 = 8 Mbit
Voltage
W= 1.65-1.95V
Product Series
25 = Serial Peripheral Interface flash memory
1. Environmental suffix “E” denotes non-Pb solder.
SST non-Pb solder devices are “RoHS Compliant”.
2. Environmental suffix “F” denotes non-Pb/non-SN solder.
SST non-Pb/non-Sn solder devices are “RoHS Compliant”.
Valid combinations for SST25WF080
SST25WF080-75-4I-SAF
SST25WF080-75-4I-ZAE
Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales
representative to confirm availability of valid combinations and to determine availability of new combinations.
©2010 Silicon Storage Technology, Inc.
S71203-03-000
27
04/10
8Mbit 1.8V SPI Serial Flash
SST25WF080
Advance Information
PACKAGING DIAGRAMS
Pin #1
Identifier
TOP VIEW
SIDE VIEW
7°
4 places
0.51
0.33
5.0
4.8
1.27 BSC
END VIEW
4.00
3.80
6.20
5.80
45°
0.25
0.10
1.75
1.35
7°
4 places
0.25
0.19
Note: 1. Complies with JEDEC publication 95 MS-012 AA dimensions,
although some dimensions may be more stringent.
2. All linear dimensions are in millimeters (max/min).
3. Coplanarity: 0.1 mm
4. Maximum allowable mold flash is 0.15 mm at the package ends and 0.25 mm between leads.
0°
8°
08-soic-5x6-SA-8
1.27
0.40
1mm
FIGURE 31: 8-lead Small Outline Integrated Circuit (SOIC) 200 mil body width (5mm x 8mm)
SST Package Code: SA
Note: For more information about the ZA package, including a copy of the package diagram, please contact your
SST representative.
©2010 Silicon Storage Technology, Inc.
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04/10
8Mbit 1.8V SPI Serial Flash
SST25WF080
Advance Information
TABLE 14: Revision History
Number
Description
Date
00
•
Initial release of data sheet
Sep 2007
01
•
Apr 2009
•
•
•
•
•
•
•
Revised Active Read Current, Standby Current, Chip-Erase Time, and Sector-/
Block-Erase Time in Features on page 1
Added a footnote to Table 2 Reset Timing Parameters
Revised Table 6 on page 9
Revised Table 10 on page 23
Revised Table 13 on page 24
Revised Figure 12 and Figure 13
Revised Product Ordering Information and Valid Combinations
Revised THLS, THHS, THLH, and THHH in Table 13 on page 24 from 5 ns to 6ns.
02
•
•
Changed Standby Current: from 5 mA to 5 µA in Features on page 1
Added the Z1A package
May 2009
03
•
•
•
Removed Z1AE package information
Added ZAE package information
Updated SST address information on page 29
Apr 2010
Silicon Storage Technology, Inc.
www.SuperFlash.com or www.sst.com
©2010 Silicon Storage Technology, Inc.
S71203-03-000
29
04/10