PS5G04S Through-hole Phototransistor/φ5 Type Features φ5 Type, Water clear epoxy Package Product features ・High Photo Current : 12.0mA TYP. (VCE=5V,Ee=1.0mW/cm2) ・Narrow distribution ・Lead–free soldering compatible ・RoHS compliant Peak Sensitivity Wavelength 880nm Half Intensity Angle 20 deg. Die materials Si Soldering methods TTW (Through The Wave) soldering and manual soldering ※Please refer to Soldering Conditions about soldering. ESD 2kV (HBM) Packing Bulk : 200pcs(MIN.) Recommended Applications Electric Household Appliances, OA/FA, PC/Peripheral Equipment, Other General Applications 2009.3.23 Page 1 PS5G04S Through-hole Phototransistor/φ5 Type Absolute Maximum Ratings (Ta=25℃) Item Symbol Absolute Maximum Ratings Unit Collector Dissipation Pc 75 mW Collector-Emitter Voltage VCEO 30 V Emitter-Collector Voltage VECO 5 V Collector Current Ic 30 mA Operating Temperature Topr -30～ +85 ℃ Storage Temperature Tstg -30～ +100 ℃ Electro-Optical Characteristics Item Photo Current (Ta=25℃) Symbol Conditions VCE=5V, Ee=1mW/cm2 ※1 Ic Characteristics Unit Min. 1.5 mA TYP. 12 mA Max. 24 mA Response Time VCE =10V, Ic=2mA, RL=100Ω tr/tf TYP. 5/5 μs Dark Current VCEO=10V ICEO Max. 0.2 μA Peak Sensitivity Wavelength VCE=5V λp TYP. 880 nm Collector-Emitter Saturation Voltage Ic=0.5mA, Ee=10mW/cm2 V C E ( SA T) TYP. 0.1 V Spatial Half Width - ⊿θ TYP. 20 deg. ※ 1 Color temperature is 2,856K. Employs a standard tungsten lamp. 2009.3.23 Page 2 PS5G04S Through-hole Phototransistor/φ5 Type Photo Current Rank (Ta=25℃) Ic(mA) Rank Condition MIN. MAX. A 1.5 3.0 B 2.4 4.8 C 4.0 8.0 D 7.0 14.0 E 12.0 24.0 VCE = 5V Ee = 1mW/cm2 ※Please contact our sales staff concerning rank designation. 2009.3.23 Page 3 PS5G04S Through-hole Phototransistor/φ5 Type Technical Data Wavelength vs. Relative Sensitivity Spatial Distribution Example Condition : Ta = 25℃, Vce = 0V Relative Sensitivity (%) Condition : Ta = 25℃ Relative Photo Current (%) Wavelength [nm] Irradiance vs. Relative Photo Current Collector-Emitter Voltage vs. Photo Current Irradiance Ee(mW/cm2) It is based on Ee=1mW/cm2. Employs a standard tungsten lamp of 2,856K. 2009.3.23 Condition : Ta = 25℃ Photo Current Ic (mA) Relative Photo Current Ic Condition : Ta = 25℃, Vce = 5V Collector-Emitter Voltage VCE(V) Employs a standard tungsten lamp of 2,856K. Page 4 PS5G04S Through-hole Phototransistor/φ5 Type Technical Data Response Time Measuring Circuit Ambient Temperature vs. Relative Photo Current Response Time (μs) Condition : VCE=10V, Ic=2mA, Ta=25℃ tr -- -- -- -- -- -tf Load Resistance : RL(Ω) Ambient Temperature vs. Collector Dissipation Ambient Temperature vs. Dark Current Dark Current : ICEO(μA) Collector Dissipation : Pc(mW) Condition : VCEO = 10V Ambient Temperature : Ta(℃) 2009.3.23 Ambient Temperature : Ta(℃) Page 5 PS5G04S Through-hole Phototransistor/φ5 Type Technical Data Ambient Temperature vs. Relative Photo Current Relative Photo Current Condition : VCE = 5V Ambient Temperature : Ta(℃) 2009.3.23 Page 6 PS5G04S Through-hole Phototransistor/φ5 Type Package Dimensions 2009.3.23 (Unit: mm) Page 7 PS5G04S Through-hole Phototransistor/φ5 Type TTW (Through The Wave) soldering Conditions Pre-heating 100 ℃ (MAX.) Resin surface temperature Solder Bath Temp. 265 ℃ (MAX.) Dipping Time Position 5 s (MAX.) At least 3.0 mm away from the root of lead 1) The dip soldering process shall be twice maximum. 2) The product shall be cooled to normal temperature before the second dipping process. ※The detail is described to LED and Photodetector handling precautions of home page: "Mounting through-hole Type Devices“ and "Soldering", and use it after the confirmation, please. Manual Soldering Conditions Iron tip temp. Soldering time and frequency Position 400 ℃ 3 s 1 time (MAX.) (30 W Max.) (MAX.) (MAX.) At least 3.0 mm away from the root of lead ※The detail is described to LED and Photodetector handling precautions of home page: "Mounting through-hole Type Devices“ and "Soldering", and use it after the confirmation, please. 2009.3.23 Page 8 PS5G04S Through-hole Phototransistor/φ5 Type Reliability Testing Result Reliability Testing Result Applicable Standard Room Temp. Operating Life Resistance to Soldering Heat EIAJ ED4701/100(101) EIAJ ED4701/300(302) Temperature Cycling EIAJ ED4701/100(105) Wet High Temp. Storage Life High Temp. Storage Life EIAJ ED4701/100(103) EIAJ ED4701/200(201) Low Temp. Storage Life EIAJ ED4701/200(202) EIAJ ED4701/400(401) Lead Tension Vibration, Variable Frequency EIAJ ED4701/400(403) Testing Conditions Duration Ta = 25℃, Pc = Maxium Rated Power Dissipation Failure 1,000 h 0/16 5s 0/16 Minimum Rated Storage Temperature(30min) ～Normal Temperature(15min) ～Maximum Rated Storage Temperature(30min) ～Normal Temperature(15min) 5 cycles 0/16 Ta = 60±2℃, RH = 90±5% 1,000 h 0/16 Ta = Maximum Rated Storage Temperature 1,000 h 0/16 Ta = Minimum Rated Storage Temperature 1,000 h 0/16 10N,1time (□0.4 and Flat Package : 5N) 10s 0/16 2h 0/16 265±5℃, 3mm from package base 2 98.1m/s (10G), 100 ～ 2KHz sweep for 20min., XYZ each direction Failure Criteria Items Symbols Conditions Failure criteria Photo Current IC EE Value of each product Irradiance of Photo Current VCE Value of each product Collector-emitter Voltage of Photo Current Testing Max. Value ≧Initial Value x 1.3 Testing Min. Value ≦ Initial Value x 0.7 Dark Current ICEO VCEO Value of each product Collector-emitter Voltage of Dark Current Testing Max. Value ≧ Spec. Max. Value x 1.2 Cosmetic Appearance - - Occurrence of notable decoloration, deformation and cracking 2009.3.23 Page 9 PS5G04S Through-hole Phototransistor/φ5 Type Special Notice to Customers Using the Products and Technical Information Shown in This Data Sheet 1) The technical information shown in the data sheets are limited to the typical characteristics and circuit examples of the referenced products. It does not constitute the warranting of industrial property nor the granting of any license. 2) For the purpose of product improvement, the specifications, characteristics and technical data described in the data sheets are subject to change without prior notice. Therefore it is recommended that the most updated specifications be used in your design. 3) When using the products described in the data sheets, please adhere to the maximum ratings for operating voltage, heat dissipation characteristics, and other precautions for use. We are not responsible for any damage which may occur if these specifications are exceeded. 4) The products that have been described to this catalog are manufactured so that they will be used for the electrical instrument of the benchmark (OA equipment, telecommunications equipment, AV machine, home appliance and measuring instrument). The application of aircrafts, space borne application, transportation equipment, medical equipment and nuclear power control equipment, etc. needs a high reliability and safety, and the breakdown and the wrong operation might influence the life or the human body. Please consult us beforehand if you plan to use our product for the usages of aircrafts, space borne application, transportation equipment, medical equipment and nuclear power control equipment, etc. except OA equipment, telecommunications equipment, AV machine, home appliance and measuring instrument. 5) In order to export the products or technologies described in this data sheet which are under the “Foreign Exchange and Foreign Trade Control Law,” it is necessary to first obtain an export permit from the Japanese government. 6) No part of this data sheet may be reprinted or reproduced without prior written permission from Stanley Electric Co., Ltd. 7) The most updated edition of this data sheet can be obtained from the address below: http://www.stanley-components.com 2009.3.23 Page 10