SY SD101CWS

SD101AWS-SD101CWS
SCHOTTKY DIODES
SOD-323
FEATURES
1.35(0.053)
1.26(.050)
1.15(0.045)
1.24(.048)
2.70(0.106)
2.70(0.106)
1.80(0.071)
2.30(0.091)
2.30(0.091)
1.60(0.063)
Low forward voltage drop
Guard ring construction for transient protection
Negligible reverse recovery time
1.80(0.071)
1.60(0.063)
MECHANICAL DATA
0.4(0.016)
.305(0.012)
.25(0.010)
.295(0.010)
.177(.007)
.089(.003)
1.00(.040)
0.1(0.004)
0.80(.031)
MIN
.72(0.028)
.69(0.027)
.08(.003)
MIN
Case: Molded plastic body
Terminals: Plated leads solderable per MIL-STD-750,
Method 2026
Polarity: Polarity symbols marked on case
Marking: SD101AWS:S1, SD101BWS:S2, SD101CWS:S3
Dimensions in millimeters and (inches)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Maximum ratings and electrical characteristics, Single diode @TA=25 C
PARAMETER
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC Blocking voltage
RMS Reverse voltage
Forward continuous current
Repetitive peak forward current @t<1.0s
@t=10us
Power dissipation
Thermal resistance junction to ambient
Storage temperature
SYMBOLS
SD101AWS
SD101BWS
SD101CWS
UNITS
VRRM
VRMS
VDC
60
50
40
VOLTS
VR(RMS)
42
35
15
50
2.0
200
300
-65 to +125
28
IFM
IFRM
Pd
RΘJA
TSTG
V
mA
mA
A
mW
C/W
C
Electrical ratings @TA=25
PARAMETER
Reverse breakdown voltage
Fowrard voltage
Reverse current
Capacitance between terminals
Reverse recovery time
SYMBOLS
SD101AWS
SD101BWS
SD101CWS
SD101AWS
SD101BWS
SD101CWS
SD101AWS
SD101BWS
SD101CWS
SD101AWS
SD101BWS
SD101CWS
SD101AWS
SD101BWS
SD101CWS
V(BR)R
Min.
60
50
40
Typ.
VF
IRM
CT
trr
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Max.
Unit
V
0.41
0.40
0.39
1.00
0.95
0.90
V
0.2
uA
2.0
2.1
2.2
1.0
pF
ns
Conditions
IR=10uA
IR=10uA
IR=10uA
IF=1.0mA
IF=1.0mA
IF=1.0mA
IF=15mA
IF=15mA
IF=15mA
VR=50V
VR=40V
VR=30V
VR=0V,f=1.0MHz
IF=IR=5mA
Irr=0.1XIR,RL=100
RATINGS AND CHARACTERISTIC CURVES SD101AWS-SD101CWS
FIG. 1- POWER DERATING CURVE
FIG. 2-TYPICAL FORWARD CHARACTERISTIC
10
See Note1
IF,FORWARD CURRENT(mA)
Pd.POWER DISSIPATION (mW)
500
400
300
200
100
0
0
1.0
0.1
0.01
25
50
75
100
125
150
0
0.2
0.4
0.6
0.8
TA,AMBIENT TEMPERATURE( C)
VR REVERSE VOLTAGE.(V)
FIG.3- TYPICAL TOTAL CAPACITANCE
VS REVERSE VOLTAGE
FIG. 4- TYPICAL REVERSE CHARACTERISTICS
1.0
10
2
TA=125 C
Tj=25 C
f=1MHz
C
IR,REVERSE CURRENT(uA)
CT, TOTAL CAPACITANCE(pF)
A
B
C
B
A
1
1
TA =75 C
0.1
TA=25 C
0.01
TA=0 C
0.001
TA =-65 C
0
0
10
20
30
40
50
0.0001
0
10
VR REVERSE VOLTAGE.(V)
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20
30
40
VR REVERSE VOLTAGE.(V)
50
60