MDS1100 1100 Watts, 50 Volts Pulsed Avionics at 1030 MHz GENERAL DESCRIPTION CASE OUTLINE 55TU-1 The MDS1100 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems at 1030 MHz, with the pulse width and duty required for MODE-S applications. The device has gold thin-film metalization and emitter ballasting for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation 8750 Device Dissipation @ 25°C1 Maximum Voltage and Current Collector to Base Voltage (BVces) 65 Emitter to Base Voltage (BVebo) 4.5 Collector Current (Ic) 100 Maximum Temperatures Storage Temperature -65 to +200 Operating Junction Temperature +200 W V V A °C °C ELECTRICAL CHARACTERISTICS @ 25°C SYMBOL CHARACTERISTICS Pout Power Out Pg ηc Power Gain Collector Efficiency RL Return Loss Tr Rise Time Pd Pulse Droop VSWR TEST CONDITIONS MIN F = 1030 MHz, Vcc = 50 Volts 1000 W Note 2 8.9 45 dB % 11 dB F = 1030 MHz, Vcc = 50 Volts Note 2 1 TYP MAX UNITS 100 nS 0.7 dB 4.0:1 Load Mismatch Tolerance FUNCTIONAL CHARACTERISTICS @ 25°C BVebo BVces hFE θjc1 NOTES: Emitter to Base Breakdown Collector to Emitter Breakdown DC – Current Gain Thermal Resistance Ie = 50 mA Ic = 100 mA Vce = 5V, Ic = 5A 3.5 65 20 V V 0.02 °C/W 1. At rated output power and pulse conditions 2. 128 µs burst, 0.5 µs on/0.5 µs off, 6.4 ms period, Pin = 130 Watts Rev B, September 2005 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. Efficiency vs. Output Power Gain vs. Output Power 48 9.6 46 Efficiency (%) Gain (dBm) 9.4 9.2 9 8.8 8.6 8.4 44 42 40 38 36 34 32 8.2 0 200 400 600 800 1000 1200 30 200 400 600 800 1000 1200 Pout (W) Pout (W) Zin Zcl R (ohms) jX (ohms) Zin 1.75 +j2.37 Zcl 0.60 -j1.62 Frequency = 1030 MHz, Vcc = 50V, Pin = 130W Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. MDS1100 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. MDS1100 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct.