1075MP 75 Watts, 50 Volts, Class C Avionics 1025 - 1150 MHz GENERAL DESCRIPTION CASE OUTLINE 55FW-1 The 1075MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC2 250 Watts Pk Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 65 Volts 3.5 Volts 6.5 Amps Pk - 65 to + 150oC + 200oC ELECTRICAL CHARACTERISTICS @ 25°C SYMBOL CHARACTERISTICS POUT PIN PG Power Out Power Input Power Gain Efficiency Load Mismatch Tolerance ηc VSWR1 TEST CONDITIONS F= 1025-1150 MHz Vcc = 50 Volts PW = 10 µsec, DF = 1% MIN TYP MAX UNITS 75 W W dB % 13 7.6 8.5 40 F = 1090 MHz 20:1 FUNCTIONAL CHARACTERISTICS @ 25°C BVebo Emitter to Base Breakdown BVces Collector to Emitter Breakdown Hfe DC Current Gain Cob Output Capacitance Thermal Resistance θjc1 Note 1: At rated pulse conditions Ie = 5 mA Ic = 15mA Vce = 5V, Ic = 100 mA Vcb = 50 V, f = 1 MHz 3.5 65 20 V V 12 0.6 pF C/W o Rev A: Dec 2009 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct.