MICROSEMI 1075MP

1075MP
75 Watts, 50 Volts, Class C
Avionics 1025 - 1150 MHz
GENERAL DESCRIPTION
CASE OUTLINE
55FW-1
The 1075MP is a COMMON BASE bipolar transistor. It is designed for pulsed
systems in the frequency band 1025-1150 MHz. The device has gold thin-film
metallization for proven highest MTTF. The transistor includes input prematch for
broadband capability. Low thermal resistance package reduces junction
temperature, extends life.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC2
250 Watts Pk
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
BVebo
Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
65 Volts
3.5 Volts
6.5 Amps Pk
- 65 to + 150oC
+ 200oC
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL
CHARACTERISTICS
POUT
PIN
PG
Power Out
Power Input
Power Gain
Efficiency
Load Mismatch Tolerance
ηc
VSWR1
TEST CONDITIONS
F= 1025-1150 MHz
Vcc = 50 Volts
PW = 10 µsec, DF = 1%
MIN
TYP
MAX
UNITS
75
W
W
dB
%
13
7.6
8.5
40
F = 1090 MHz
20:1
FUNCTIONAL CHARACTERISTICS @ 25°C
BVebo
Emitter to Base Breakdown
BVces
Collector to Emitter Breakdown
Hfe
DC Current Gain
Cob
Output Capacitance
Thermal Resistance
θjc1
Note 1: At rated pulse conditions
Ie = 5 mA
Ic = 15mA
Vce = 5V, Ic = 100 mA
Vcb = 50 V, f = 1 MHz
3.5
65
20
V
V
12
0.6
pF
C/W
o
Rev A: Dec 2009
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit
our web site at www.microsemi.com or contact our factory direct.
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit
our web site at www.microsemi.com or contact our factory direct.
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit
our web site at www.microsemi.com or contact our factory direct.