BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C General Purpose Transistor PNP Silicon COLLECTOR 3 MARKING DIAGRAM 3 3 1 1 BASE 2 SOT-23 XX = Device Code (See 2 Table Below) 1 2 EMITTER Maximum Ratings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage BC856 BC857 BC858,BC859 BC856 BC857 BC858,BC859 Symbol VCEO Value -65 -45 -30 -80 -50 -30 -5.0 -100 VCBO Emitter-Base VOltage Collector Current-Continuous VEBO IC Unit V V V mAdc Thermal Characteristics Characteristics Total Device Dissipation FR-5 Board (1) (Note 1.)TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Symbol Junction and Storage, Temperature Unit 225 1.8 mW mW/ C C/W PD R θJA 556 PD 300 2.4 R θJA 417 mW mW/ C C/W TJ,Tstg -55 to +150 C Total Device Dissipation Alumina Substrate, (Note 2.) TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Max 1.F R -5=1.0 x 0.75 x 0.062 in. 2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina. Electrical Characteristics (TA=25 C Unless Otherwise noted) Symbol Characteristics Min Typ Max Unit Off Characteristics Collector-Emitter Breakdown Voltage (IC= -10mA) BC856 Series BC857 Series BC858, BC859 Series V(BR)CEO -65 -45 -30 - - V Collector-Emitter Breakdown Voltage (IC=-10 µA ,VEB=0) BC856 Series BC857 Series BC858, BC859 Series V(BR)CES -80 -50 -30 - - V Collector-Base Breakdown Voltage (IC=-10 µA) BC856 Series BC857 Series BC858, BC859 Series V(BR)CBO -80 -50 -30 - - V Emitter-Base Breakdown Voltage (IE=-1.0 µA) BC856 Series BC857 Series BC858, BC859 Series V(BR)EBO -5.0 -5.0 -5.0 - - V ICBO - - -15 -4.0 nA mA Collector Cutoff Current (VCB=-30V) (VCB=-30V, TA=150 C) WEITRON http://www.weitron.com.tw 1/4 Rev A 12-Apr-05 BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C Electrical Characteristics WE IT R ON (TA=25 C Unless Otherwise noted) Characteristics Symbol Min Typ Max 125 220 420 90 150 270 180 290 520 250 475 800 -0.3 -0.65 Unit On Characteristics DC Current Gain (IC= -10uA, VCE=-5.0V) (IC= -2.0mA,VCE=-5.0V) hFE BC856A, BC857A, BC858A BC856B, BC857B, BC858B BC858C BC856A, BC857A, BC858A BC856B, BC857B, BC858B, BC859B BC857C, BC858C, BC859C Collector-Emitter Saturation Voltage (IC= -10mA, IB=-0.5mA) (IC= -100mA, IB=-5.0mA) VCE(sat) - - Base-Emitter Saturation Voltage (IC= -10mA, IB=-0.5mA) (IC= -100mA, IB=-5.0mA) VBE(sat) - -0.7 -0.9 Base-Emitter On Voltage (IC= -10mA, IB=-0.5mA) (IC= -100mA, IB=-5.0mA) VBE(on) -0.6 - fT 100 Cobo - - V V - - -0.75 -0.82 - - - 4.5 V Small-signal Characteristics Current-Gain-Bandwidth Product (IC= -10mA, VCE= -5.0VDC, f=100MHz) Output Capacitance (VCB= -10V, f=1.0MHz) Noise Figure (IC= -0.2mA, VCE= -5.0Vdc, Rs=2.0k Ω , f=1.0kHz, BW=200Hz) BC856, BC857, BC858 Series BC859, Series MHz pF dB NF - - 10 4.0 Device Marking BC856A=3A; BC856B=3B; BC857A=3E; BC857B=3F; BC857C=3G BC858A=3J; C858B=3K; BC858C=3L; BC859B=4B; BC859C=4C WEITRON http://www.weitron.com.tw 2/4 Rev A 12-Apr-05 BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C WE IT R ON -1.0 2.0 -0.9 1.5 VCE=10V TA=25 C 1.0 V, VOLTAGE (VOLTS) hFE,NORMALIZED DC CURRENT GAIN BC857/BC858/BC859 Series 0.7 0.5 TA=25 C -0.7 VBE(ON)@VCE= -10V -0.6 -0.5 -0.4 -0.3 -0.2 0.3 0.2 VCE(sat)@IC/BC=10 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 0 -0.1 -100 -200 -0.2 -0.5 IC, COLLECTOR CURRENT (mAdc) -1.6 -1.2 -0.8 IC= -200mA IC= -20mA IC= -100mA -0.4 0 -0.02 -0.1 -1.0 IB, BASE CURRENT (mA) -10 -20 qVB, TEMPERATURE COEFFICIENT (mV/ C) TA=25 C IC= -50mA C,CAPACITANCE (pF) TA=25 C 5.0 Cob 2.0 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40 fT, CURRENT-GAIN-BANDWIDTH PRODUCT (MHz) Cib 1.0 -0.4 -0.6 Figure 5. Capacitances http://www.weitron.com.tw -20 -50 -100 -55 C to +125 C 1.2 1.6 2.0 2.4 2.8 -0.2 -1.0 -10 IC, COLLECTOR CURRENT (mA) -100 400 300 200 VCE= -10V TA= 25 C 150 100 80 60 40 30 20 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50 IC, COLLECTOR CURRENT (mAdc) VR, REVERSE VOLTAGE (VOLTS) WEITRON -10 Figure 4. Base-Emitter Temperature Coefficient 10 3.0 -5.0 1.0 Figure 3. Collector Saturation Region 7.0 -2.0 Firure2. "Saturation" And "On" Voltage -2.0 IC= -10mA -1.0 IC, COLLECTOR CURRENT (mAdc) Figure1.Normalized DC Current Gain VCE, COLLECTOR- EMITTER VOLTAGE (V) VBE(sat)@IC/BC=10 -0.8 Figure 6. Current-Gain- Bandwidth Product 3/4 Rev A 12-Apr-05 BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C WE IT R ON -1.0 TJ=25 C VCE= -5.0V TA= 25 C -0.8 2.0 V,Voltage (Volts) hFE,DC CURRENT GAIN (NORMALIZED) BC856 Series 1.0 0.5 VBE(sat)@IC/IB=10 -0.6 VBE@VCE=-5.0V -0.4 -0.2 0.2 VCE(sat)@IC/IB=10 -0.1 -0.2 -1.0 -2.0 -5.0 -10 -20 0 -50 -100 -200 -0.2 -0.5 -1.0 IC, COLLECTOR CURRENT (AMP) -2.0 -1.6 IC= -10mA -20mA -100mA -50mA -200mA -0.8 -0.4 TJ=25 C 0 -0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -1.8 -55 C to 125 C -2.6 -3.3 -0.5 -1.0 fT, CURRENT-GAIN-BANDWIDTH PRODUCT C. CAPACTIANCE (pF) Cob 4.0 -5.0 -10 -20 -10 -20 -50 -100 -200 VCE=-5.0V 200 100 50 20 -10 -100 IC, COLLECTOR CURRENT (mA) Figure 12.Current-Gain-Bandwidth Product Figure 11. Capacitance http://www.weitron.com.tw 500 -1.0 -50 -100 VR, REVERSE VOLTAGE (VOLTS) WEITRON -5.0 Figure 10. Base-Emitter Temperature Coefficient 10 8.0 -2.0 -2.0 IC, COLLECTOR CURRENT (mA) Cib -1.0 -100 -200 qVB for VBE -0.2 TJ=25 C -0.5 -50 -2.2 -20 40 2.0 -0.1 -0.2 -20 -1.4 Figure 9. Collector Saturation Region 6.0 -10 -1.0 IB, BASE CURRENT (mA) 20 -5.0 Figure 8. "ON" Voltage qVB TEMPERATURE COEFFICIENT (mV/= C) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. DC Current Gain -1.2 -2.0 IC, COLLECTOR CURRENT(mA) 4/4 Rev A 12-Apr-05