LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN/PNP Duals • We declare that the material of product compliance with RoHS requirements. LBC817-16DPMT1G LBC817-25DPMT1G LBC817-40DPMT1G MAXIMUM RATING - NPN Rating Symbol Value Unit Collector − Emitter Voltage VCEO 45 V Collector − Base Voltage VCBO 50 V Emitter − Base Voltage VEBO 5.0 V IC 500 mAdc Collector Current − Continuous MAXIMUM RATING - PNP SC-74 Rating Symbol Value Unit Collector − Emitter Voltage VCEO −45 V Collector − Base Voltage VCBO −50 V Emitter − Base Voltage VEBO −5.0 V IC −500 mAdc Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board, (Note 1) TA = 25°C Derate above 25°C PD 225 1.8 mW mW/°C 556 °C/W 300 2.4 mW mW/°C RqJA 417 °C/W TJ, Tstg −55 to +150 °C Collector Current − Continuous 6 5 Q1 4 Q2 THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Ambient RqJA Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C PD Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 1 2 3 ORDERING INFORMATION DEVICE MARKING LBC817–16DPMT1G 56A SHIPPING 3000/Tape & Reel LBC817–16DPMT3G 56A 10,000/Tape & Reel LBC817–25DPMT1G 56B 3000/Tape & Reel LBC817–25DPMT3G 56B 10,000/Tape & Reel LBC817–40DPMT1G 56C 3000/Tape & Reel LBC817–40DPMT3G 56C 10,000/Tape & Reel Rev.O 1/5 LESHAN RADIO COMPANY, LTD. LBC817-16DPMT1G LBC817-25DPMT1G LBC817-40DPMT1G ELECTRICAL CHARACTERISTICS(NPN) (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector −Emitter Breakdown Voltage (IC = 10 mA) V(BR)CEO 45 − − V Collector −Emitter Breakdown Voltage (VEB = 0, IC = 10 mA) V(BR)CES 50 − − V Emitter−Base Breakdown Voltage (IE = 1.0 mA) V(BR)EBO 5.0 − − V Collector Cutoff Current (VCB = 20 V) (VCB = 20 V, TA = 150°C) ICBO − − − − 100 5.0 nA mA 100 160 250 40 − − − − 250 400 600 − OFF CHARACTERISTICS ON CHARACTERISTICS DC Current Gain (IC = 100 mA, VCE = 1.0 V) (IC = 500 mA, VCE = 1.0 V) BC817−16 BC817−25 BC817−40 hFE − Collector −Emitter Saturation Voltage (IC = 500 mA, IB = 50 mA) VCE(sat) − − 0.7 V Base −Emitter On Voltage (IC = 500 mA, VCE = 1.0 V) VBE(on) − − 1.2 V fT 100 − − MHz Cobo − 10 − pF Symbol Min Typ Max Unit Collector −Emitter Breakdown Voltage (IC = −10 mA) V(BR)CEO −45 − − V Collector −Emitter Breakdown Voltage (VEB = 0, IC = −10 mA) V(BR)CES −50 − − V Emitter−Base Breakdown Voltage (IE = −1.0 mA) V(BR)EBO −5.0 − − V − − − − −100 −5.0 nA mA 100 160 250 40 − − − − 250 400 600 − SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) ELECTRICAL CHARACTERISTICS(PNP) (TA = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCB = −20 V) (VCB = −20 V, TJ = 150°C) ICBO ON CHARACTERISTICS DC Current Gain (IC = −100 mA, VCE = −1.0 V) BC807−16 BC807−25 BC807−40 hFE (IC = −500 mA, VCE = −1.0 V) − Collector −Emitter Saturation Voltage (IC = −500 mA, IB = −50 mA) VCE(sat) − − −0.7 V Base −Emitter On Voltage (IC = −500 mA, IB = −1.0 V) VBE(on) − − −1.2 V fT 100 − − MHz Cobo − 10 − pF SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = −10 V, f = 1.0 MHz) Rev.O 2/5 LESHAN RADIO COMPANY, LTD. LBC817-16DPMT1G LBC817-25DPMT1G LBC817-40DPMT1G VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) TYPICAL NPN CHARACTERISTICS hFE, DC CURRENT GAIN 1000 VCE = 1 V TJ = 25°C 100 10 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) 1000 1.0 TJ = 25°C 0.8 0.6 IC = 10 mA 0.4 θV, TEMPERATURE COEFFICIENTS (mV/ °C) VBE(sat) @ IC/IB = 10 0.8 V, VOLTAGE (VOLTS) 500 mA 0 0.01 0.1 1 IB, BASE CURRENT (mA) 10 VBE(on) @ VCE = 1 V 0.6 0.4 0.2 VCE(sat) @ IC/IB = 10 0 10 100 IC, COLLECTOR CURRENT (mA) +1 qVC for VCE(sat) 0 -1 qVB for VBE -2 1000 1 10 100 IC, COLLECTOR CURRENT (mA) Figure 3. “On” Voltages 1000 Figure 4. Temperature Coefficients 100 1 1 ms 10 ms 100 ms 1s Thermal Limit 0.1 Cib IC (A) C, CAPACITANCE (pF) 100 Figure 2. Saturation Region 1.0 1 300 mA 0.2 Figure 1. DC Current Gain TA = 25°C 100 mA 10 0.01 Cob Single Pulse Test @ TA = 25°C 1 0.1 0.001 1 10 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Capacitances 100 0.01 0.1 1 VCE (Vdc) 10 Figure 6. BC817−40L Safe Operating Area Rev.O 3/5 100 LESHAN RADIO COMPANY, LTD. LBC817-16DPMT1G LBC817-25DPMT1G LBC817-40DPMT1G TYPICAL PNP CHARACTERISTICS 1000 hFE, DC CURRENT GAIN VCE = -1.0 V TA = 25°C 100 10 -0.1 -10 -100 -1.0 IC, COLLECTOR CURRENT (mA) -1000 -1.0 -1.0 TA = 25°C TJ = 25°C -0.8 -0.8 V, VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain IC = -500 mA -0.6 -0.4 IC = -300 mA -0.2 -1.0 -10 IB, BASE CURRENT (mA) -0.4 VCE(sat) @ IC/IB = 10 IC = -10 mA -0.1 VBE(on) @ VCE = -1.0 V -0.6 -0.2 IC = -100 mA 0 -0.01 0 -1.0 -100 Figure 2. Saturation Region -10 -100 IC, COLLECTOR CURRENT (mA) -1000 Figure 3. “On” Voltages 100 +1.0 qVC for VCE(sat) C, CAPACITANCE (pF) θV, TEMPERATURE COEFFICIENTS (mV/ °C) VBE(sat) @ IC/IB = 10 0 -1.0 -2.0 -1.0 qVB for VBE -10 -100 IC, COLLECTOR CURRENT Figure 4. Temperature Coefficients -1000 Cib 10 Cob 1.0 -0.1 -1.0 -10 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Capacitances Rev.O 4/5 -100 LESHAN RADIO COMPANY, LTD. LBC817-16DPMT1G LBC817-25DPMT1G LBC817-40DPMT1G SC−74 D 6 5 4 E HE 1 2 3 b e C A 0.05 (0.002) q L A1 DIM A A1 b c D E e L HE q MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.37 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10° − MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° INCHES NOM 0.039 0.002 0.015 0.007 0.118 0.059 0.037 0.016 0.108 − MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10° 2.4 0.094 0.95 0.037 1.9 0.074 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm inches Rev.O 5/5