SBP13007A High Voltage Fast-Switching NPN Power Transistor Features ◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Ratings Symbol Parameter Test Conditions Value Units VCES Collector-Emitter Voltage VBE = 0 700 V VCEO Collector-Emitter Voltage IB = 0 400 V VEBO Emitter-Base Voltage IC = 0 9.0 V IC Collector Current 8.0 A ICP Collector pulse Current 16 A IB Base Current IBM Base Peak Current PC tP = 5ms 4.0 A 8.0 A Total Dissipation at Tc = 25℃ 85 Total Dissipation at Ta = 25℃ 2.15 W TJ Operation Junction Temperature - 40 ~ 150 ℃ TSTG Storage Temperature - 40 ~ 150 ℃ Value 1.56 Units ℃/W 62.5 ℃/W Tc: Case temperature (good cooling) Ta: Ambient temperature (without heat sink) Thermal Characteristics Symbol RθJc Parameter Thermal Resistance Junction to Case RθJA Thermal Resistance Junction to Ambient Jan 2009. Rev. 0 1/5 Copyright @WinSemi Semiconductor Co.,Ltd.,All rights reserved. SBP13007A Electrical Characteristics (TC=25℃ unless otherwise noted) Value Symbol Parameter VCEO(sus) Collector-Emitter Breakdown Voltage Test Conditions Ic=10mA,Ib=0 Min Typ Max 400 - - - - VCE(sat) Collector-Emitter Saturation Voltage 1.0 V 2.5 Ic=8.0A,Ib=2.0A Ic=5.0A,Ib=1.0A V 0.5 Ic=2.0A,Ib=0.4A Ic=5.0A,Ib=1.0A Units - - - - - - - - 2.5 V Tc=100℃ Ic=2.0A,Ib=0.4A VBE(sat) Base-Emitter Saturation Voltage Ic=5.0A,Ib=1.0A Ic=5.0A,Ib=1.0A 1.2 1.6 1.5 V V Tc=100℃ ICBO hFE 1.0 Collector-Base Cutoff Current Vcb=700V (Vbe=-1.5V) Vcb=700V, Tc=100℃ DC Current Gain Vce=5V,Ic=2.0A 10 - 40 Vce=5V, Ic=5.0A 5 - 40 1.5 3.0 0.17 0.4 Storage Time tf Fall Time mA - Resistive Load ts 5.0 VCC=125V , IB1=1.0A , Tp=25㎲ Ic=5.0A IB2=-1.0A ㎲ Inductive Load ts Storage Time tf Fall Time Inductive Load ts Storage Time tf Fall Time VCC=15V ,Ic=5A IB1=1.0A , IB2=-2.5A L=0.35mH,Vclamp=300V - 0.8 2.0 - 0.06 0.12 VCC=15V ,Ic=1A IB1=0.4A , IB2=-1.0A L=0.35mH,Vclamp=300V Tc=100℃ - 1.0 3.0 - 0.07 0.15 Note: Pulse Test : Pulse width 300, Duty cycle 2% 2/5 . ㎲ ㎲ SBP13007A Fig. 1 DC Current Gain Fig. 3 Base--Emitter Saturation Voltage Fig.5 Power Derating Fig. 2 Collector-Emitter Saturation Voltage Fig. 4 Safe Operation Area Fig.6 Reverse Biased Safe Operation Area 3/5 SBP13007A Resistive Load Switching Test Circuit Inductive Load Switching & RBSOA Test Circuit 4/5 . SBP13007A TO-220 Package Dimension 5/5