SBN13002A1 High Voltage Fast-Switching NPN Power Transistor Features ◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Ratings Symbol Parameter Test Conditions Value Units VCES Collector-Emitter Voltage VBE = 0 600 V VCEO Collector-Emitter Voltage IB = 0 400 V VEBO IC = 0 9.0 V IC Emitter-Base Voltage Collector Current 1.0 A ICP Collector pulse Current 2.0 A IB Base Current - A IBM Base Peak Current - A PC tP = 5ms Total Dissipation at Tc = 25℃ 10 Total Dissipation at Ta = 25℃ 0.75 W TJ Operation Junction Temperature - 40 ~ 150 ℃ TSTG Storage Temperature - 40 ~ 150 ℃ Tc: Case temperature (good cooling) Ta: Ambient temperature (without heat sink) 1/5 Jan 2009. Rev. 0 Copyright @WinSemi Semiconductor Co.,Ltd.,All rights reserved. SBN13002A1 Electrical Characteristics (TC=25℃ Symbol unless otherwise noted) Parameter Test Conditions Value Min Typ Max Units BVCBO Collector-Base Breakdown Voltage Ic=0.5mA,Ie=0 600 BVCEO Collector-Emitter Breakdown Voltage Ic=10mA,Ib=0 400 - - V VCE(sat) Collector-Emitter Saturation Voltage Ic=200mA,Ib=100mA - - 1.6 V VBE(sat) Base-Emitter Saturation Voltage Ic=200mA,Ib=100mA - - 1.2 V ICBO Collector-Base Cutoff Current Vcb=550V,Ie=0mA - - 10 μA ICEO Collector-Emitter Cutoff Current Vce=400V,Ib=0mA - - 20 μA IEBO Emitter- Base Cutoff Current Veb=9V,Ic=0mA - - 20 μA hFE DC Current Gain ts Storage Time tf Fall Time Note: Pulse Test : Pulse width 300, Duty cycle 2% 2/5 . V Vce=20V,Ic=20mA 10 40 Vce=5V, Ic=1mA 9 VCC=250V IC=5 IB IB1=- IB2=0.04A 2 - - - - 0.8 ㎲ SBN13002A1 Fig. 1 DC Current Gain Fig. 3 Power Derating Fig. 2 Saturation Voltage Fig. 4 Safe Operation Area Fig. 5 Static Characteristics 3/5 SBN13002A1 Resistive Load Switching Test Circuit Inductive Load Switching & RBSOA Test Circuit 4/5 . SBN13002A1 TO-92 Package Dimension 1.27 0.050 1.27 0.050 5/5