SBR13003B1 High Voltage Fast-Switching NPN Power Transistor Features ◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Ratings Symbol Parameter Test Conditions Value Units VCES Collector-Emitter Voltage VBE = 0 700 V VCEO Collector-Emitter Voltage IB = 0 400 V VEBO Emitter-Base Voltage IC = 0 9.0 V IC Collector Current 1.5 A ICP Collector pulse Current 3.0 A IB Base Current IBM Base Peak Current PC tP = 5ms 0.75 A 1.5 A Total Dissipation at Tc* = 25℃ 25 Total Dissipation at Ta* = 25℃ 1.14 W TJ Operation Junction Temperature - 40 ~ 150 ℃ TSTG Storage Temperature - 40 ~ 150 ℃ Tc: Case temperature (good cooling) Ta: Ambient temperature (without heat sink) Thermal Characteristics Symbol Parameter RθJc Thermal Resistance Junction to Case RθJA Thermal Resistance Junction to Ambient Jan 2009. Rev. 1 Value Units 3.12 ℃/W 89 ℃/W 1/5 Copyright @WinSemi Semiconductor Co.,Ltd.,All rights reserved. SBR13003B1 Electrical Characteristics (TC=25℃ Value Symbol VCEO(sus) unless otherwise noted) Parameter Test Conditions Collector-Emitter Breakdown Voltage Ic=10mA,Ib=0 Min Typ Max 400 - - Collector-Emitter Saturation Voltage Ic=1.0A,Ib=0.25A - - Base-Emitter Saturation Voltage Ic=0.5A,Ib=0.1A - - - - Ic=1.0A,Ib=0.25A ICBO hFE 0.5 V 1.0 Ic=1.5A,Ib=0.5A VBE(sat) V 0.3 Ic=0.5A,Ib=0.1A VCE(sat) Units 1.0 1.2 1.0 Collector-Base Cutoff Current Vcb=700V (Vbe=-1.5V) Vcb=700V, Tc=100℃ DC Current Gain Vce=2V,Ic=0.5A 10 - 30 Vce=2V, Ic=1.0A 5 - 25 - 0.2 1.0 1.5 3.0 0.15 0.4 5.0 V mA Resistive Load ton Turn-on Time ts Storage Time tf Fall Time VCC=125V ,Ic=1A IB1=0.2A , IB2=-0.5A Tp=25㎲ ㎲ Inductive Load ts Storage Time tf Fall Time Inductive Load ts Storage Time tf Fall Time VCC=15V ,Ic=1A IB1=0.2A , IB2=-0.5A L=0.35mH,Vclamp=300V - 1.2 4.0 - 0.12 0.3 VCC=15V ,Ic=1A IB1=0.2A , IB2=-0.5A L=0.35mH,Vclamp=300V Tc=100℃ - 2.4 5.0 - 0.15 0.4 Note: Pulse Test : Pulse width 300, Duty cycle 2% 2/5 . ㎲ ㎲ SBR13003B1 Fig. 1 DC Current Gain Fig. 3 Switching Time Fig. 2 Saturation Voltage Fig. 4 Safe Operation Area Fig.5 Power Derating 3/5 SBR13003B1 Resistive Load Switching Test Circuit Inductive Load Switching & RBSOA Test Circuit 4/5 . SBR13003B1 TO-126 Package Dimension 1 3 5/5