VRSM IF(AV)M IF(RMS) IFSM VF0 rF = = = = = = 4000 4140 6500 46×103 0.905 0.109 Rectifier Diode V A A A V mΩ 5SDD 40H4000 Doc. No. 5SYA1176-00 March 05 • Very low on-state losses • Optimum power handling capability Blocking Maximum rated values 1) Parameter Symbol Conditions Value Unit Repetitive peak reverse voltage VRRM f = 50 Hz, tp = 10ms, Tj = -40...160°C 4000 V Non - repetitive peak reverse voltage VRSM f = 5 Hz, tp = 10ms, Tj = -40...160°C 4000 V Characteristic values Parameter Symbol Conditions Max. (reverse) leakage current IRRM min typ VRRM, Tj = 160°C max 100 Unit mA Mechanical data Maximum rated values 1) Parameter Symbol Conditions Mounting force FM Acceleration a Acceleration a min 45 typ 50 max Unit 55 kN Device unclamped 50 m/s 2 Device clamped 100 m/s 2 Characteristic values Parameter Symbol Conditions Weight m Housing thickness H Surface creepage distance DS min typ max 0.9 FM = 50 kN, Ta = 25 °C 25.5 40 Air strike distance Da 20 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Unit kg 26.5 mm mm mm 5SDD 40H4000 On-state Maximum rated values 1) Parameter Symbol Conditions Max. average on-state current IF(AV)M Max. RMS on-state current IF(RMS) Max. peak non-repetitive surge current IFSM Limiting load integral I2t Max. peak non-repetitive surge current IFSM Limiting load integral I2t min typ 50 Hz, Half sine wave, TC = 85 °C tp = 10 ms, Tj = 160°C, VR = 0 V max Unit 4140 A 6500 A 3 A 6 A2s 3 A 10.02×10 6 A2s max Unit 46×10 10.58×10 tp = 8.3 ms, Tj = 160°C, VR = 0 V 49×10 Characteristic values Parameter Symbol Conditions min typ On-state voltage VF IF = 4000 A, Tj = 160°C 1.310 V Threshold voltage V(T0) 0.905 V Slope resistance rT Tj = 160°C IT = 6000...19000 A 0.109 mΩ max Unit Switching Characteristic values Parameter Symbol Conditions Recovery charge Qrr diF/dt = -30 A/µs, VR = 100 V IFRM = 2000 A, Tj = 160°C min typ 4600 µAs ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1176-00 March 05 page 2 of 7 5SDD 40H4000 Thermal Maximum rated values 1) Parameter Symbol Conditions min max Unit Operating junction temperature range Tvj -40 160 °C -40 160 °C max Unit Double-side cooled Fm = 45...55 kN 8 K/kW Rth(j-c)A Anode-side cooled Fm = 45...55 kN 14.5 K/kW Rth(j-c)C Cathode-side cooled Fm = 45...55 kN 18.0 K/kW Double-side cooled Fm = 45...55 kN 2.5 K/kW Single-side cooled Fm = 45...55 kN 5.0 K/kW Storage temperature range Tstg typ Characteristic values Symbol Conditions Parameter Thermal resistance junction Rth(j-c) to case Thermal resistance case to Rth(c-h) heatsink Rth(c-h) min typ Analytical function for transient thermal impedance: n Zth(j-c) (t) = ∑ R th i (1 - e-t/τ i ) i =1 i 1 2 3 4 Rth i(K/kW) 4.533 2.255 0.868 0.345 τi(s) 0.4406 0.1045 0.0092 0.0022 Fig. 1 Transient thermal impedance junction-tocase. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1176-00 March 05 page 3 of 7 5SDD 40H4000 IF ( A ) 20000 160 °C T j = 25 °C 18000 16000 14000 12000 10000 8000 6000 4000 2000 0 0 1 2 3 VF (V) 4 20 ∫ i2dt 80 IFSM ( kA ) 100 i 2dt (106 A2s) IFSM ( kA ) Fig. 2 Max. on-state characteristics. 50 40 15 30 60 VR = 0 V 10 20 40 V R ≤ 0.5 V RRM 5 10 I FSM 20 1 10 t ( ms ) 0 100 Fig. 3 Surge forward current vs. pulse length. Half sine wave, single pulse, VR = 0 V 0 1 10 100 Number n of cycles at 50 Hz Fig. 4 Surge forward current vs. number of pulses. Half sine wave, VR = 0 V ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1176-00 March 05 page 4 of 7 5SDD 40H4000 10000 ψ = 60° 120° 180° 9000 8000 PT ( W ) PT ( W ) 10000 ψ = 30° 270° DC 7000 7000 6000 6000 5000 5000 4000 4000 3000 3000 2000 2000 1000 1000 0 0 1000 2000 3000 0 4000 5000 I FAV ( A ) Fig. 5 Forward power loss vs. average forward current, sine waveform, f = 50 Hz 1000 2000 3000 4000 5000 I FAV ( A ) Fig. 6 Forward power loss vs. average forward current, square waveform, f = 50 Hz TC ( °C ) TC ( °C ) 160 160 140 140 120 120 100 180° 8000 DC 0 60° 90° 120° 9000 DC 100 DC 270° 80 80 ψ = 60° 60 0 1000 2000 120° ψ = 30° 180° 60 3000 4000 5000 0 1000 60° 2000 90° 3000 180° 4000 5000 I FAV ( A ) I FAV ( A ) Fig. 7 Max. case temperature vs aver. forward current, sine waveform, f = 50 Hz 120° Fig. 8 Max. case temperature vs aver. forward current, square waveform, f = 50 Hz ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1176-00 March 05 page 5 of 7 5SDD 40H4000 Q rr (µC) maxim um 6000 IrrM (A) 500 7000 average 400 m inimum 5000 300 4000 m ax. 200 avg. 3000 m inim um 2000 100 0 20 40 60 - di F /dt (A/µs) Fig. 9 Reverse recovery charge vs. dIF/dt, IF = 2000 A, VR = 100 V, Tj = Tjmax, limit values 0 20 40 60 - di F /dt (A/µs) Fig. 10 Peak reverse recovery current vs. diF/dt, IF = 2000 A, VR = 100 V, Tj = Tjmax, limit values ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1176-00 March 05 page 6 of 7 5SDD 40H4000 Fig. 11 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. Related application notes: Doc. Nr Titel 5SYA 2020 Design of RC-Snubbers for Phase Control Applications 5SYA 2029 Designing Large Rectifiers with High Power Diodes 5SYA 2036 Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors Please refer to http://www.abb.com/semiconductors for actual versions. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 [email protected] www.abb.com/semiconductors Doc. No. 5SYA1176-00 March 05