VDRM VDSM IT(AV)M IT(RMS) ITSM V(T0) rT = = = = = = = 4400 5200 4120 6470 85.2×103 1.04 0.115 V V A A A V mΩ Ω Phase Control Thyristor 5STP 52U5200 Doc. No. 5SYA1042-02 Dec. 03 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications • Optimum power handling capability • Interdigitated amplifying gate Blocking Maximum rated values 1) Symbol Conditions 5STP 52U5200 5STP 52U5000 5STP 52U4600 VDSM, VRSM f = 5 Hz, tp = 10 ms 5200 V 5000 V 4600 V VDRM, VRRM f = 50 Hz, tp = 10 ms 4400 V 4200 V 4000 V VRSM tp = 5 ms, single pulse 5700 V 5500 V 5100 V dV/dtcrit Exp. to 0.67 x VDRM, Tvj = 110°C 2000 V/µs Characteristic values Parameter Symbol Conditions min typ max Unit Forward leakage current IDSM VDSM, Tvj = 110°C 600 mA Reverse leakage current IRSM VRSM, Tvj = 110°C 600 mA Mechanical data Maximum rated values 1) Parameter Symbol Conditions Mounting force FM Acceleration a Acceleration a min typ 120 135 max Unit 160 kN Device unclamped 50 m/s 2 Device clamped 100 m/s 2 Characteristic values Parameter Symbol Conditions Weight m Housing thickness H Surface creepage distance DS FM = 135 kN, Ta = 25 °C min typ 34.4 56 Air strike distance Da 22 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. max Unit 3.6 kg 35.4 mm mm mm 5STP 52U5200 On-state Maximum rated values 1) Parameter Symbol Conditions Average on-state current IT(AV)M RMS on-state current IT(RMS) Peak non-repetitive surge current ITSM Limiting load integral I2t Peak non-repetitive surge current ITSM Limiting load integral I2t min typ Half sine wave, Tc = 70°C max Unit 4120 A 6470 A 3 tp = 10 ms, Tvj = 110 °C, 85.2×10 VD = VR = 0 V 6 36.28×10 3 tp = 8.3 ms, Tvj = 110 °C, 90.3×10 VD = VR = 0 V 6 33.85×10 A A2s A A2s Characteristic values Parameter Symbol Conditions On-state voltage VT IT = 3000 A, Tvj = 110 °C 1.38 V Threshold voltage V(T0) IT = 2000 A - 6000 A, Tvj= 110 °C 1.04 V Slope resistance rT 0.115 mΩ Holding current IH Tvj = 25 °C 200 mA Tvj = 110 °C 100 mA Tvj = 25 °C 900 mA Tvj = 110 °C 700 mA Latching current Switching Maximum rated values IL min typ max Unit 1) Parameter Symbol Conditions Critical rate of rise of onstate current di/dtcrit Critical rate of rise of onstate current di/dtcrit Circuit-commutated turn-off tq time min Tvj = 110 °C, Cont. ITRM = 3000 A, f = 50 Hz VD ≤ 0.67 VDRM, Cont. IFG = 2 A, tr = 0.5 µs f = 1Hz Tvj = 110°C, ITRM = 3000 A, VR = 200 V, diT/dt = -5 A/µs, VD ≤ 0.67⋅VDRM, dvD/dt = 20V/µs typ max Unit 250 A/µs 1000 A/µs 700 µs Characteristic values Parameter Symbol Conditions Recovery charge Qrr Tvj = 110°C, ITRM = 3000 A, VR = 200 V, diT/dt = -5 A/µs Gate turn-on delay time tgd VD = 0.4⋅VRM, IFG = 2 A, tr = 0.5 µs, Tvj = 25 °C min typ max Unit 12500 µAs 3 µs ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1042-02 Dec. 03 page 2 of 6 5STP 52U5200 Triggering Maximum rated values 1) Parameter Symbol Conditions min typ max Unit Peak forward gate voltage VFGM 12 V Peak forward gate current IFGM 10 A Peak reverse gate voltage VRGM 10 V Average gate power loss PG(AV) see Fig. 9 Characteristic values Parameter Symbol Conditions Gate-trigger voltage VGT Tvj = 25 °C 2.6 V Gate-trigger current IGT Tvj = 25 °C 400 mA Gate non-trigger voltage VGD VD = 0.4 x VDRM, Tvj = 110 °C 0.3 V Gate non-trigger current IGD VD = 0.4 x VDRM, Tvj = 110°C 10 mA Thermal Maximum rated values min typ max Unit 1) Parameter Symbol Conditions Operating junction temperature range Tvj min Storage temperature range Tstg typ -40 max Unit 110 °C 140 °C Characteristic values Parameter Symbol Conditions max Unit Double-side cooled Fm = 120...160 kN 4 K/kW Rth(j-c)A Anode-side cooled Fm = 120...160 kN 8 K/kW Rth(j-c)C Cathode-side cooled Fm = 120...160 kN 8 K/kW Double-side cooled Fm = 120...160 kN 0.8 K/kW Single-side cooled Fm = 120...160 kN 1.6 K/kW Thermal resistance junction Rth(j-c) to case Thermal resistance case to Rth(c-h) heatsink Rth(c-h) min typ Analytical function for transient thermal impedance: n Zth(j-c) (t) = å R th i (1 - e-t/τ i ) i =1 i 1 2 3 4 Rth i(K/kW) 2.701 0.816 0.326 0.160 τi(s) 0.9478 0.1249 0.0146 0.0032 Fig. 1 Transient thermal impedance junction-to case. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1042-02 Dec. 03 page 3 of 6 5STP 52U5200 Max. on-state characteristic model: Max. on-state characteristic model: VT25 = ATvj + BTvj ⋅ IT + CTvj ⋅ ln(IT +1) + DTvj ⋅ IT VT110 = ATvj + BTvj ⋅ IT + CTvj ⋅ ln(IT +1) + DTvj ⋅ IT A25 -6 69.79×10 Valid for IT = 300 – 100000 A B25 C25 D25 -6 -3 -3 67.25×10 160×10 -2.17×10 Valid for IT = 300 – 100000 A A110 -6 20.86×10 B110 -6 66.73×10 C110 -3 130.70×10 D110 -3 2.43×10 Fig. 2 Max. on-state voltage characteristics Fig. 3 Max. on-state voltage characteristics Fig. 4 On-state power dissipation vs. mean on-state current. Turn-on losses excluded. Fig. 5 Max. permissible case temperature vs. mean on-state current. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1042-02 Dec. 03 page 4 of 6 5STP 52U5200 Fig. 6 Surge on-state current vs. pulse length. Halfsine wave. IG (t) 100 % 90 % IGM IGM IGon diG/dt tr tp(IGM) Fig. 7 Surge on-state current vs. number of pulses. Half-sine wave, 10 ms, 50Hz. ≈ 2..5 A ≥ 1.5 IGT ≥ 2 A/µs ≤ 1 µs ≈ 5...20 µs diG/dt IGon 10 % tr t tp (IGM) tp (IGon) Fig. 8 Recommended gate current waveform. Fig. 9 Max. peak gate power loss. Fig. 10 Recovery charge vs. decay rate of on-state current. Fig. 11 Peak reverse recovery current vs. decay rate of on-state current. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1042-02 Dec. 03 page 5 of 6 5STP 52U5200 C C Fig. 12 Device Outline Drawing. Related application notes: Doc. Nr Titel 5SYA2020 Design of RC-Snubber for Phase Control Applications 5SYA2034 Gate-drive Recommendations for PCT's 5SYA 2036 Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors Please refer to http://www.abb.com/semiconductors for actual versions. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 [email protected] www.abb.com/semiconductors Doc. No. 5SYA1042-02 Dec. 03