VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 3000 24×103 2.2 0.6 2800 V A A V mΩ Ω V Asymmetric Gate turn-off Thyristor 5SGA 30J4502 Doc. No. 5SYA1202-03 Jan. 03 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode • Industry standard housing • Cosmic radiation withstand rating Blocking Maximum rated values 1) Parameter Symbol Conditions Repetitive peak off-state voltage VDRM Repetitive peak reverse voltage VRRM Permanent DC voltage for 100 FIT failure rate VDclink min typ VGR ≥ 2 V Ambient cosmic radiation at sea level in open air. max Unit 4500 V 17 V 2800 V max Unit Characteristic values Parameter Symbol Conditions min typ Repetitive peak off-state current IDRM VD = VDRM, VGR ≥ 2 V 60 mA Repetitive peak reverse current IRRM VR = VRRM, RGK = ∞ Ω 20 mA Mechanical data Maximum rated values 1) Parameter Symbol Conditions Mounting force Fm min typ max Unit 36 40 44 kN min typ max Unit Characteristic values Parameter Symbol Conditions Pole-piece diameter Dp ± 0.1 mm 75 mm Housing thickness H ± 0.5 mm 26 mm Weight m 1.3 kg Surface creepage distance Ds Anode to Gate 33 Air strike distance Da Anode to Gate 15 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. mm mm 5SGA 30J4502 GTO Data On-state Maximum rated values 1) Parameter Symbol Conditions Max. average on-state current ITAVM min typ Half sine wave, TC = 85 °C Max. RMS on-state current ITRMS Max. peak non-repetitive surge current ITSM Limiting load integral I2t Max. peak non-repetitive surge current ITSM Limiting load integral I2t max Unit 930 A 1460 A 3 tp = 10 ms, Tvj = 125°C, sine wave After Surge: VD = VR = 0 V 24×10 A 6 2.88×10 3 tp = 1 ms, Tvj = 125°C, sine wave After Surge: VD = VR = 0 V 40×10 3 A2s A 800×10 A2s max Unit 4 V Characteristic values Parameter Symbol Conditions min typ On-state voltage VT IT = 3000 A, Tvj = 125°C Threshold voltage V(T0) 2.2 V Slope resistance rT Tvj = 125°C IT = 300...4000 A 0.6 mΩ Holding current IH Tvj = 25°C 50 A max Unit 400 A/µs 800 A/µs Turn-on switching Maximum rated values 1) Parameter Symbol Conditions Critical rate of rise of onstate current diT/dtcr Critical rate of rise of onstate current diT/dtcr Min. on-time ton 100 Parameter Symbol Conditions min Turn-on delay time td Rise time tr Turn-on energy per pulse Eon Tvj = 125°C, IT = 3000 A, IGM = 30 A, diG/dt = 20 A/µs min typ f = 200 Hz f = 1 Hz µs Characteristic values typ VD = 0.5 VDRM, Tvj = 125 °C IT = 3000 A, di/dt = 200 A/µs, IGM = 30 A, diG/dt = 20 A/µs, CS = 6 µF, RS = 5 Ω max Unit 3 µs 6 µs 3.6 J max Unit 3000 A Turn-off switching Maximum rated values 1) Parameter Max. controllable turn-off current Min. off-time Symbol Conditions ITGQM min typ VDM ≤ VDRM, diGQ/dt = 40 A/µs, CS = 6 µF, LS ≤ 0.3 µH toff 80 µs Characteristic values Parameter Symbol Conditions Storage time tS Fall time tf Turn-on energy per pulse Eoff Peak turn-off gate current IGQM min typ VD = 0.5 VDRM, Tvj = 125 °C VDM ≤ VDRM, diGQ/dt = 40 A/µs, ITGQ = ITGQM, RS = 5Ω, CS = 6 µF, LS = 0.3 µH max Unit 25 µs 3 µs 13 J 900 A ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 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No. 5SYA1202-03 Jan. 03 page 2 of 9 5SGA 30J4502 Gate Maximum rated values 1) Parameter Symbol Conditions Repetetive peak reverse voltage VGRM Repetetive peak reverse current IGRM min typ max Unit 17 V 20 mA max Unit VGR = VGRM Characteristic values Parameter Symbol Conditions Gate trigger voltage VGT Gate trigger current IGT Thermal Maximum rated values min Tvj = 25°C, VD = 24 V, RA = 0.1 Ω typ 1 V 3 A 1) Parameter Symbol Conditions min typ max Unit Junction operating temperature Tvj -40 125 °C Storage temperature range Tstg -40 125 °C max Unit Characteristic values Parameter Symbol Thermal resistance junction to case Thermal resistance case to heatsink (Double side cooled) Conditions min typ Rth(jc) Double side cooled 12 K/kW Rth(jc)A Anode side cooled 22 K/kW Rth(jc)C Cathode side cooled 27 K/kW Rth(ch) Single side cooled 6 K/kW Rth(ch) Double side cooled 3 K/kW Analytical function for transient thermal impedance: n ZthJC(t) = å Ri(1 - e -t/τ i ) i =1 i 1 2 3 4 Ri(K/kW) 5.400 4.500 1.700 0.400 τi(s) 1.2000 0.1700 0.0100 0.0010 Fig. 1 Transient thermal impedance, junction to case. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1202-03 Jan. 03 page 3 of 9 5SGA 30J4502 PAV [kW] 5.00 IT [A] 3000 125°C 25°C 4.50 2500 4.00 DC 180° Rect. 180° Sine 120° Rect. 60° Rect. 3.50 2000 3.00 1500 2.50 2.00 1000 1.50 1.00 500 0.50 0 0.00 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 250 500 750 1000 1250 1500 ITAV [V] VT [V] Fig. 2 On-state characteristics. Fig. 3 Average on-state power dissipation vs. average on-state current.. ò i2dt [A2s] ITSM [kA] 100.00 1.E+07 Itsm 2 òI td 1.E+06 10.00 Conditions: Before surge: T j = 125°C After surge: V D = 0V 1.E+05 1.00 0 1 10 100 tp [ms] Fig. 4 Surge current and fusing integral vs. pulse width. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1202-03 Jan. 03 page 4 of 9 5SGA 30J4502 Fig. 5 Forward blocking voltage vs. gate-cathode resistance.. Fig. 6 Static dv/dt capability: Forward blocking voltage vs. neg. gate voltage or gate cathode resistance. Fig. 7 Forward gate current vs. forard gate voltage. Fig. 8 Gate trigger current vs. junction temperature ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1202-03 Jan. 03 page 5 of 9 5SGA 30J4502 Fig. 9 Turn-on energy per pulse vs. on-state current and turn-on voltage. Fig. 10 Turn-on energy per pulse vs. on.-state current and current rise rate Common Test conditions for figures 9, 10 and 11: diG/dt = 20 A/µs CS = 6 µF RS =5Ω Tj = 125 °C Definition of Turn-on energy: 20 µ s E on = òV D ⋅ ITdt (t = 0, IG = 0.1 ⋅ IGM ) 0 Common Test conditions for figures 12, 13 and 15: Definition of Turn-off energy: 40 µ s E off = òV D ⋅ ITdt ( t = 0, IT = 0.9 ⋅ ITGQ ) 0 Fig. 11 Turn-on energy per pulse vs. on-state current and turn-on voltage. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1202-03 Jan. 03 page 6 of 9 5SGA 30J4502 Q GQa [A] 10000 Eoff [J] 18 Conditions: VD = ½⋅⋅VDRM di GQ/dt = 40 A/ µ s CS = 6 µ F, R S = 5 Ω Tj = 125°C 16 14 12 9000 QGQa 14 µF C S = 4µ 12 8000 7000 VDM=VDRM µF CS = 3µ 8 5000 ¾ VDRM 6 4000 ½ VDRM 6 3000 4 2000 2 1000 4 500 1000 1500 2000 2500 Conditions: µs diGQ /dt =40 A/µ T j = 125 °C 2 0 0 0 µF C S = 6µ 10 6000 10 8 Eoff [J] 0 3000 0 ITGQ [A] Fig. 12 Turn-off energy per pulse vs. turn-off current and peak turn-off voltage. Extracted gate charge vs. turn-off current. 500 1000 1500 2000 2500 Fig. 13 Turn-off energy per pulse vs. turn-off current and snubber capacitance. Eoff [J] ts [µ s] µ F] C s [µ 30 6 3000 ITGQ [A] IGQM [A] 1000 50 IGQM Condition: VD = ½⋅⋅VDRM , VDM = VDRM µs diGQ /dt = 40 A/µ RS = 5 Ω , LS ≤ 300 nH 24 40 800 4 18 30 600 3 12 20 5 tS 400 Eoff 2 6 200 10 diGQ /dt = 40 A/µs Tj = 125 °C Condition: 1 1000 1500 2000 2500 3000 0 0 -10 0 10 202530 40 50 60 707580 IGQM [A] Fig. 14 Required snubber capacitor vs. max allowable turn-off current. Fig. 15 Turn-off energy per pulse, storage time and peak turn-off gate current vs. junction temperature. IGQM [A] ts [s] 50 45 IGQM 40 35 30 tS 25 20 15 Conditions: ITGQ = 3000 A T j = 125 °C 10 5 0 0 10 20 30 40 50 0 90 100 110 120 125 Tj [°C] 50 900 45 800 40 700 35 600 30 500 25 400 20 300 15 200 10 100 5 0 0 60 IGQM [A] ts [s] 1000 1000 800 600 IGQM 400 tS Conditions: µs diGQ/dt =40 A/µ T j = 125 °C 0 500 1000 1500 2000 diGQ /dt [A/µs] Fig. 16 Storage time and peak turn-off gate current vs. neg. gate current rise rate. 200 2500 0 3000 ITGQ [A] Fig. 17 Storage time and peak turn-off gate current vs. turn-off current. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1202-03 Jan. 03 page 7 of 9 5SGA 30J4502 Fig. 18 General current and voltage waveforms with GTO-specific symbols. Fig. 19 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1202-03 Jan. 03 page 8 of 9 5SGA 30J4502 Reverse avalanche capability In operation with an antiparallel freewheeling diode, the GTO reverse voltage VR may exceed the rate value VRRM due to stray inductance and diode turn-on voltage spike at high di/dt. The GTO is then driven into reverse avalanche. This condition is not dangerous for the GTO provided avalanche time and current are below 10 µs and 1000 A respectively. However, gate voltage must remain negative during this time. Recommendation : VGR = 10… 15 V. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 [email protected] www.abb.com/semiconductors Doc. No. 5SYA1202-03 Jan. 03