VDRM ITGQM ITSM V(T0) rT VDC-link = = = = = = 4500 4000 32×103 1.4 0.325 2800 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4510 Doc. No. 5SYA1232-02 June 07 • High snubberless turn-off rating • Optimized for medium frequency (<1 kHz) and wide temperature range • High reliability • High electromagnetic immunity • Simple control interface with status feedback • AC or DC supply voltage • Contact factory for series connection Blocking Maximum rated values 1) Parameter Symbol Conditions Rep. peak off-state voltage VDRM Gate Unit energized min max Unit 4500 V 2800 V off-state 17 V on-state 10 V max Unit 50 mA Permanent DC voltage for VDC-link 100 FIT failure rate of GCT Ambient cosmic radiation at sea level in open air. Gate Unit energized Reverse voltage IGCT in VRRM typ Characteristic values Parameter Symbol Conditions Rep. peak off-state current IDRM VD = VDRM, Gate Unit energized min typ Mechanical data (see Fig. 11, 12) 1) Maximum rated values Symbol Conditions Fm min typ max Unit 36 40 44 kN Parameter Pole-piece diameter Symbol Conditions Dp ± 0.1 mm min typ max Unit Housing thickness H 25.3 Weight m Surface creepage distance Ds Anode to Gate 33 mm Air strike distance Da Anode to Gate 10 mm Length l ± 1.0 mm 439 mm Height h ± 1.0 mm 40 mm Width IGCT w ± 1.0 mm 1) Maximum rated values indicate limits beyond which damage to the device may occur 173 mm Parameter Mounting force Characteristic values 85 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. mm 25.8 mm 2.9 kg 5SHY 35L4510 GCT Data On-state (see Fig.1)3, 4, 5, 6, 14, 15) Maximum rated values Parameter Max. average on-state current Symbol Conditions IT(AV)M Half sine wave, TC = 85 °C, Max. RMS on-state current IT(RMS) min typ max Unit 1700 A Double side cooled Max. peak non-repetitive surge on-state current ITSM Limiting load integral I2t Max. peak non-repetitive surge on-state current ITSM Limiting load integral I2t Stray inductance between GCT and antiparallel diode LD Critical rate of rise of onstate current diT/dtcr 2670 A 3 tp = 10 ms, Tj = 125 °C, sine wave after surge: VD = VR = 0 V 32×10 A 6 5.12×10 3 21×10 tp = 30 ms, Tj = 125 °C, sine wave after surge: VD = VR = 0 V A2s A 6 6.62×10 A2s Only relevant for applications with antiparallel diode to the IGCT 300 nH For higher diT/dt and current lower than 100 A an external retrigger puls is required. 200 A/µs typ max Unit 2.35 2.7 V 1.4 V 0.325 mΩ max Unit 1000 A/µs max Unit 3.5 µs 7 µs 1 µs 1.5 J Characteristic values Parameter On-state voltage Symbol Conditions VT IT = 4000 A, Tj = 125 °C min Threshold voltage V(T0) Slope resistance rT Turn-on switching 1) (see Fig. 14, 15) Parameter Critical rate of rise of onstate current Symbol Conditions diT/dtcr f = 0..500 Hz, Tj = 125 °C, VD = 2800 V, ITM ≤ 4000 A min min Rise time Symbol Conditions VD = 2800 V, Tj = 125 °C tdon IT = 4000 A, di/dt = VD / Li tdon SF Li = 5 µH CCL = 10 µF, LCL = 0.3 µH tr Turn-on energy per pulse Eon Tj = 125 °C IT = 1000...4000 A Maximum rated values typ Characteristic values Parameter Turn-on delay time Turn-on delay time status feedback typ Turn-off switching (see Fig. 7, 8, 10, 14, 15) 1) Maximum rated values Parameter Max. controllable turn-off current Symbol Conditions ITGQM VDM ≤ VDRM, Tj = 125°C, VD = 2800 V, RS = 0.65 Ω, CCL = 10 µF, LCL ≤ 0.3 µH min Symbol Conditions tdoff VD = 2800 V, Tj = 125 °C tdoff SF VDM ≤ VDRM, RS = 0.65 Ω ITGQ = 4000 A, Li = 5 µH CCL = 10 µF, LCL = 0.3 µH Eoff min typ max Unit 4000 A max Unit 7 µs 7 µs 22 J Characteristic values Parameter Turn-off delay time Turn-off delay time status feedback Turn-off energy per pulse typ 19.5 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1232-02 June 07 page 2 of 9 5SHY 35L4510 Gate Unit Data Power supply (see Fig. 2, 9, 10, 12, 13) 1) Maximum rated values Parameter Gate Unit voltage (Connector X1) Min. current needed to power up the Gate Unit Symbol Conditions VGIN,RMS AC square wave amplitude (15 kHz - 100kHz) or DC voltage. No galvanic isolation to power circuit. IGIN Min Rectified average current see application note 5SYA 2031 min typ 28 max Unit 40 V 2.1 A Gate Unit power consumption PGIN Max 100 W max Unit 8 A max Unit Characteristic values Parameter Internal current limitation Symbol Conditions IGIN Max Rectified average current limited by the Gate Unit min typ Optical control1)input/output 2) Maximum rated values Parameter Min. on-time Min. off-time Symbol Conditions ton min toff typ 40 µs 40 µs Characteristic values Parameter Optical input power Optical noise power Optical output power Symbol Conditions Pon CS CS: Command signal Poff CS SF: Status feedback Valid for 1mm plastic optical fiber P on SF typ -15 -19 (POF) Optical noise power Poff SF Pulse width threshold tGLITCH Max. pulse width without response External retrigger pulse width min tretrig 600 max Unit -1 dBm -45 dBm -1 dBm -50 dBm 400 ns 1100 ns 2) Do not disconnect or connect fiber optic cables while light is on. Connectors 2) (see Fig. 11, 12, 13) Symbol Description 3) X1 AMP: MTA-156, Part Number 641210-5 Parameter Gate Unit power connector LWL receiver for command signal CS Agilent, Type HFBR-2528 4) LWL transmitter for status feedback SF Agilent, Type HFBR-1528 4) 2) Do not disconnect or connect fiber optic cables while light is on. 3) AMP, www.amp.com 4) Agilent Technologies, www.semiconductor.agilent.com Visual feedback (see Fig. 13) Parameter Gate OFF Symbol Description LED1 "Light" when GCT is off Color (green) Gate ON LED2 "Light" when gate-current is flowing (yellow) Fault LED3 "Light" when not ready / Failure (red) Power supply voltage OK LED4 "Light" when power supply is within specified range (green) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1232-02 June 07 page 3 of 9 5SHY 35L4510 Thermal Maximum rated values 1) Parameter Junction operating temperature Symbol Tvj Conditions min typ max Unit -40 125 °C Storage temperature range Tstg -40 60 °C Ambient operational temperature Ta -40 50 °C max Unit 8.5 K/kW 3 K/kW Characteristic values Parameter Symbol Thermal resistance junction-to-case Rth(j-c) of GCT Thermal resistance case-toheatsink of GCT Rth(c-h) Conditions min typ Double side cooled Double side cooled Analytical function for transient thermal impedance: n Z th(j-c) (t) = ∑ Ri(1 - e-t/τ i ) i=1 i 1 2 3 4 Ri(K/kW) 5.562 1.527 0.868 0.545 τi(s) 0.5119 0.0896 0.0091 0.0024 Fig. 1 Transient thermal impedance (junction-tocase) vs. time (max. values) Max. Turn-off current for Lifetime operation • calculated lifetime of on-board capacitors 20 years • with slightly forced air cooling (air velocity > 0.5 m/s) • strong air cooling allows for increased ambient temperature Fig. 2 Max. turn-off current vs. frequency for lifetime operation ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1232-02 June 07 page 4 of 9 5SHY 35L4510 Max. on-state characteristic model: Max. on-state characteristic model: VT25 = ATvj + BTvj ⋅ IT + CTvj ⋅ ln(IT + 1) + DTvj ⋅ IT VT125 = ATvj + BTvj ⋅ IT + CTvj ⋅ ln(IT + 1) + DTvj ⋅ IT Valid for iT = 300 – 30000 A B25 C25 -6 -3 163.4×10 141.1×10 Valid for iT = 300 – 30000 A A25 -3 622.7×10 D25 0.0 A125 -3 -16.0×10 B125 -6 226.6×10 C125 -3 218.4×10 D125 0.0 Fig. 3 GCT on-state voltage characteristics Fig. 4 GCT on-state voltage characteristics Fig. 5 Surge on-state current vs. pulse length, halfsine wave Fig. 6 Surge on-state current vs. number of pulses, half-sine wave, 10 ms, 50Hz ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1232-02 June 07 page 5 of 9 5SHY 35L4510 Fig. 7 GCT turn-off energy per pulse vs. turn-off current Fig. 8 Safe Operating Area Fig. 9 Max. Gate Unit input power in chopper mode Fig. 10 Burst capability of Gate Unit ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1232-02 June 07 page 6 of 9 5SHY 35L4510 Fig. 11 Outline drawing; all dimensions are in millimeters and represent nominal values unless stated otherwise 1) VGIN (AC or DC+) 2) VGIN (AC or DC+) 3) Cathode 4) VGIN (AC or DC-) 5) VGIN (AC or DC-) Fig. 12 Detail A: pin out of supply connector X1 AS-IGCT Gate Unit X1 AS-GCT Supply (VGIN) Internal Supply (No galvanic isolation to power circuit) LED1 LED2 LED3 LED4 CS SF TurnOn Circuit Command Signal (Light) Status Feedback (Light) Rx Tx Logic Monitoring TurnOff Circuit Anode Gate Cathode Fig. 13 Block diagram ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1232-02 June 07 page 7 of 9 5SHY 35L4510 Turn-off External Retrigger pulse Turn-on dIT/dt VDM ITM VDSP VD VD IT 0.9 VD IT 0.4 ITGQ 0.1 VD VD CS CS CS SF SF SF tretrig tdon SF tdoff SF tdoff tdon tr ton toff Fig. 14 General current and voltage waveforms with IGCT - specific symbols Li LCL DUT Rs VDC LD CCL LLoad Fig. 15 Test circuit ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1232-02 June 07 page 8 of 9 5SHY 35L4510 Related documents: 5SYA 2031 5SYA 2032 5SYA 2036 5SYA 2046 5SYA 2048 5SYA 2051 5SZK 9107 Applying IGCT Gate Units Applying IGCTs Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors Failure rates of IGCTs due to cosmic rays Field measurements on High Power Press Pack Semiconductors Voltage ratings of high power semiconductors Specification of enviromental class for pressure contact IGCTs, OPERATION available on request, please contact factory Please refer to http://www.abb.com/semiconductors for current version of documents. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 [email protected] www.abb.com/semiconductors Doc. No. 5SYA1232-02 June 07