VCE IC = = 2500 V 50 A IGBT-Die 5SMX 12L2510 Die size: 12.4 x 12.4 mm Doc. No. 5SYA 1622-03 Sep 05 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitter voltage Symbol Conditions VCES DC collector current IC Peak collector current ICM Gate-emitter voltage 1) 1) VGE = 0 V Limited by Tvjmax VGES IGBT short circuit SOA tpsc Junction temperature Tvj min -20 VCC = 2000 V, VCEM ≤ 2500 V VGE ≤ 15 V, Tvj ≤ 125 °C Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. -40 max Unit 2500 V 50 A 100 A 20 V 10 µs 125 °C 5SMX 12L2510 IGBT characteristic values 2) Parameter Symbol Conditions min Collector (-emitter) breakdown voltage V(BR)CES 2500 Collector-emitter saturation voltage VCE sat VGE = 0 V, IC = 1 mA, Tvj = 25 °C IC = 50 A, VGE = 15 V Tvj = 25 °C VCE = 2500 V, VGE = 0 V Gate leakage current IGES VCE = 0 V, VGE = ±20 V, Tvj = 125 °C VGE(TO) Gate charge Qge Input capacitance Cies 2.0 2.5 1000 5 7.5 V IC = 50 A, VCE = 1250 V, VGE = -15 ..15 V 510 0.13 Internal gate resistance RGint 5 Turn-on delay time td(on) Fall time Turn-on switching energy Turn-off switching energy Short circuit current 2) tf Eon Eoff ISC nC 7.8 VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 °C Cres td(off) µA nA Reverse transfer capacitance Turn-off delay time µA 500 Coes tr V -500 Output capacitance Rise time Unit V 100 Tvj = 125 °C IC = 10 mA, VCE = VGE, Tvj = 25 °C 2.9 3.1 Tvj = 25 °C ICES max V Tvj = 125 °C Collector cut-off current Gate-emitter threshold voltage typ 0.4 VCC = 1250 V, IC = 50 A, RG = 33 Ω, VGE = ±15 V, Lσ = 2400 nH, inductive load Tvj = 25 °C 380 Tvj = 125 °C 390 Tvj = 25 °C 255 Tvj = 125 °C 265 VCC = 1250 V, IC = 50 A, RG = 33 Ω, VGE = ±15 V, Lσ = 2400 nH, inductive load Tvj = 25 °C 690 Tvj = 125 °C 790 Tvj = 25 °C 320 Tvj = 125 °C 350 Tvj = 25 °C 28 VCC = 1250 V, IC = 50 A, VGE = ±15 V, RG = 33 Ω, Lσ = 2400 nH, inductive load, FWD: ½ 5SLX12L2510 VCC = 1250 V, IC = 50 A, VGE = ±15 V, RG = 33 Ω, Lσ = 2400 nH, inductive load nF Ω ns ns ns ns mJ Tvj = 125 °C 42 Tvj = 25 °C 40 mJ Tvj = 125 °C tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C, VCC = 2000 V, VCEM ≤ 2500 V 50 250 A Characteristic values according to IEC 60747 - 9 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1622-03 Sep 05 page 2 of 5 5SMX 12L2510 Mechanical properties Parameter Unit Overall die L x W exposed L x W (except gate pad) front metal Dimensions gate pad LxW thickness Metallization 3) 3) front (E) AlSi1 back (C) AlSi1 + TiNiAg 12.4 x 12.4 mm 10.11 x 10.13 mm 1.46 x 1.61 mm 305 ± 20 µm 4 µm 1.8 + 1.2 µm For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033. Outline drawing G Emitter Note: all dimensions are shown in mm This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, Chap. IX. This product has been designed and qualified for Industrial Level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1622-03 Sep 05 page 3 of 5 5SMX 12L2510 100 100 VCE = 25 V 25 °C 90 90 80 80 70 70 60 60 IC [A] IC [A] 125 °C 50 50 40 40 30 30 20 20 125 °C 25 °C 10 10 VGE = 15 V 0 0 0 1 2 3 4 5 0 1 2 3 4 VCE [V] Fig. 1 Typical on-state characteristics 7 8 9 10 11 12 13 Fig. 2 Typical transfer characteristics 0.10 VCC = 1250 V RG = 33 ohm VGE = ±15 V Tvj = 125 °C Lσ = 2.4 µH 0.18 0.16 VCC = 1250 V IC = 50 A VGE = ±15 V Tvj = 125 °C Lσ = 2.4 µH 0.09 Eon 0.08 0.14 Eon 0.07 0.12 Eon, Eoff [J] Eon, Eoff [J] 6 VGE [V] 0.20 Eoff 0.10 0.08 0.06 0.04 0.03 0.04 0.02 0.02 0.01 0.00 Eoff 0.05 0.06 0.00 0 25 50 75 100 125 150 0 IC [A] Fig. 3 5 Typical switching characteristics vs collector current 20 40 60 80 100 120 140 RG [ohm] Fig. 4 Typical switching characteristics vs gate resistor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1622-03 Sep 05 page 4 of 5 5SMX 12L2510 10 20 Cies VGE = 0 V fOSC = 1 MHz VOSC = 50 mV VCC = 1250 V 15 C [nF] VGE [V] VCC = 1800 V 10 1 Coes 5 Cres IC = 50 A Tvj = 25 °C 0 0.1 0.0 Fig. 5 0.1 0.2 0.3 Qg [µC] 0.4 Typical gate charge characteristics 0.5 0 Fig. 6 5 10 15 20 VCE [V] 25 30 35 Typical capacitances vs collector-emitter voltage ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 [email protected] www.abb.com/semiconductors Doc. No. 5SYA 1622-03 Sep 05