9&( ,& 9 $ ,*%7'LH 60;. 'LHVL]H[PP Doc. No. 5SYA1619-01 July 03 • /RZORVVWKLQ,*%7GLH • +LJKO\UXJJHG637GHVLJQ • /DUJHIURQWERQGDEOHDUHD 0D[LPXPUDWHGYDOXHV 3DUDPHWHU Collector-emitter voltage 6\PERO &RQGLWLRQV VCES DC collector current IC Peak collector current ICM Gate-emitter voltage VGE = 0 V, Tvj ≥ 25 °C Limited by Tvjmax VGES IGBT short circuit SOA tpsc Junction temperature Tvj PLQ -20 VCC = 1300 V, VCEM ≤ 1700 V VGE ≤ 15 V, Tvj ≤ 125 °C 1) Maximum rated values indicate limits beyond which damage to the device may occur $%%6ZLW]HUODQG/WG6HPLFRQGXFWRUVUHVHUYHVWKHULJKWWRFKDQJHVSHFLILFDWLRQVZLWKRXWQRWLFH -40 PD[ 8QLW 1700 V 75 A 150 A 20 V 10 µs 150 °C 60;. ,*%7FKDUDFWHULVWLFYDOXHV 3DUDPHWHU 6\PERO &RQGLWLRQV PLQ Collector (-emitter) breakdown voltage V(BR)CES 1700 Collector-emitter saturation voltage VCE sat VGE = 0 V, IC = 1 mA, Tvj = 25 °C IC = 75 A, VGE = 15 V Tvj = 25 °C VCE = 1700 V, VGE = 0 V Gate leakage current IGES VCE = 0 V, VGE = ±20 V, Tvj = 125 °C VGE(TO) Gate charge Qge Input capacitance Cies 2.1 2.3 800 4.5 6.5 V IC = 75 A, VCE = 900 V, VGE = -15 ..15 V 630 0.29 Internal gate resistance RGint 5 Turn-on delay time td(on) Fall time Turn-on switching energy Turn-off switching energy Short circuit current tf Eon Eoff ISC nC 6.9 VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 °C Cres td(off) µA nA Reverse transfer capacitance Turn-off delay time µA 500 Coes tr V -500 Output capacitance Rise time 8QLW V 100 Tvj = 125 °C IC = 3 mA, VCE = VGE, Tvj = 25 °C 2.7 2.6 Tvj = 25 °C ICES PD[ V Tvj = 125 °C Collector cut-off current Gate-emitter threshold voltage W\S 0.48 VCC = 900 V, IC = 75 A, RG = 15 Ω, VGE = ±15 V, Lσ = 160 nH, inductive load Tvj = 25 °C 170 Tvj = 125 °C 180 Tvj = 25 °C 100 Tvj = 125 °C 110 VCC = 900 V, IC = 75 A, RG = 15 Ω, VGE = ±15 V, Lσ = 160 nH, inductive load Tvj = 25 °C 420 Tvj = 125 °C 500 Tvj = 25 °C 90 Tvj = 125 °C 110 Tvj = 25 °C 18 VCC = 900 V, IC = 75 A, VGE = ±15 V, RG = 15 Ω, Lσ = 160 nH, inductive load, FWD: 5SLX12G1700 VCC = 900 V, IC = 75 A, VGE = ±15 V, RG = 15 Ω, Lσ = 160 nH, inductive load nF Ω ns ns ns ns mJ Tvj = 125 °C 25 Tvj = 25 °C 12 Tvj = 125 °C 19 mJ tpsc V9GE = 15 V, Tvj = 125 °C, VCC = 1300 V, VCEM 9 350 A $%%6ZLW]HUODQG/WG6HPLFRQGXFWRUVUHVHUYHVWKHULJKWWRFKDQJHVSHFLILFDWLRQVZLWKRXWQRWLFH Doc. No. 5SYA1619-01 July 03 page 2 of 5 60;. 0HFKDQLFDOSURSHUWLHV 3DUDPHWHU 8QLW Overall die L W x exposed L x W (except gate pad) front metal Dimensions gate pad LxW thickness Metallization 1) front AISi1 back AI / Ti / Ni / Ag x 11.9 11.9 mm 9.9 x 9.9 mm 1.2 x 1.2 mm 210 ± 15 µm 4 µm 1.2 µm 1) For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA2033-01 April 02. 2XWOLQHGUDZLQJ G Emitter 1RWHDOOGLPHQVLRQVDUHVKRZQLQPP 7KLVLVDQHOHFWURVWDWLFVHQVLWLYHGHYLFHSOHDVHREVHUYHWKHLQWHUQDWLRQDOVWDQGDUG,(&&KDS,; $%%6ZLW]HUODQG/WG6HPLFRQGXFWRUVUHVHUYHVWKHULJKWWRFKDQJHVSHFLILFDWLRQVZLWKRXWQRWLFH Doc. No. 5SYA1619-01 July 03 page 3 of 5 60;. 150 150 VCE = 25 V 25 °C 125 125 125 °C 100 IC [A] IC [A] 100 75 75 50 50 25 25 125 °C 25 °C VGE = 15 V 0 0 0 1 2 3 4 0 5 1 2 3 4 6 7 8 9 10 11 12 13 VGE [V] VCE [V] )LJ 5 )LJ Typical onstate characteristics 0.080 Typical transfer characteristics 0.050 VCC = 900 V RG = 15 ohm VGE = ±15 V Tvj = 125 °C Lσ = 160 nH 0.070 0.060 VCC = 900 V IC = 75 A VGE = ±15 V Tvj = 125 °C Lσ = 160 nH 0.045 0.040 0.035 Eon Eon, Eoff [J] Eon, Eoff [J] 0.050 0.040 Eon 0.030 0.030 0.025 0.020 Eoff 0.015 0.020 Eoff 0.010 0.010 0.005 0.000 0.000 0 25 50 75 100 125 0 150 )LJ Typical switching characteristics vs collector current 10 20 30 40 50 RG [ohm] Ic [A] )LJ Typical switching characteristics vs gate resistor $%%6ZLW]HUODQG/WG6HPLFRQGXFWRUVUHVHUYHVWKHULJKWWRFKDQJHVSHFLILFDWLRQVZLWKRXWQRWLFH Doc. No. 5SYA1619-01 July 03 page 4 of 5 60;. 10 20 Cies VCC = 900 V 15 VGE = 0 V fOSC = 1 MHz VOSC = 50 mV C [nF] VGE [V] VCC = 1300 10 1 Coes Cres 5 IC = 75 A Tvj = 25 °C 0 0.1 0.0 )LJ 0.1 0.2 0.3 Qg [µC] 0.4 0.5 Typical gate charge characteristics 0.6 0 )LJ 5 10 15 20 VCE [V] 25 30 35 Typical capacitances vs collector-emitter voltage This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. $%%6ZLW]HUODQG/WG6HPLFRQGXFWRUVUHVHUYHVWKHULJKWWRFKDQJHVSHFLILFDWLRQVZLWKRXWQRWLFH $%%6ZLW]HUODQG/WG 6HPLFRQGXFWRUV Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 [email protected] www.abb.com/semiconductors Doc. No. 5SYA1619-01 July 03