APTGF75DDA120T Dual Boost Chopper NPT IGBT Power Module VCES = 1200V IC = 75A @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies • Power factor correction Features • Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration G4 SENSE1 E4 VBUS OUT2 OUT1 0/VBUS VBUS E2 NTC2 SENSE2 G2 NTC1 Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area Tc = 25°C Max ratings 1200 100 75 150 ±20 500 Tj = 150°C 150A @ 1200V Tc = 25°C Tc = 80°C Tc = 25°C Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-5 APTGF75DDA120T – Rev 1 August, 2005 VBUS Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Easy paralleling due to positive TC of VCEsat • Low profile APTGF75DDA120T Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(on) Collector Emitter on Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions Tj = 25°C VGE = 0V VCE = 1200V Tj = 125°C T VGE =15V j = 25°C IC = 75A Tj = 125°C VGE = VCE, IC = 2.5 mA VGE = ±20V, VCE = 0V Min Test Conditions VGE = 0V VCE = 25V f = 1MHz Min Chopper diode ratings and characteristics Symbol Characteristic VRRM Test Conditions VR=1200V IF(A V) Maximum Average Forward Current 50% duty cycle Diode Forward Voltage IF = 100A IF = 200A IF = 100A Reverse Recovery Time Qrr Reverse Recovery Charge 3.7 Typ IF = 100A VR = 800V di/dt =200A/µs V Max Unit nF ns ns mJ Max Unit V 250 Tj = 125°C 500 Tj = 125°C 100 2.0 2.3 1.8 Tj = 25°C 420 Tj = 125°C 580 Tj = 25°C Tj = 125°C 1.2 5.3 APT website – http://www.advancedpower.com mA V nA Tj = 25°C Tc = 70°C Unit 6.5 ±500 1200 Maximum Reverse Leakage Current trr Typ 5.1 0.7 0.4 120 50 310 20 Max 2 130 60 360 30 9 4 Min Maximum Peak Repetitive Reverse Voltage IRM VF 4.5 Inductive Switching (25°C) VGE = 15V VBus = 600V IC = 75A R G = 7.5Ω Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 75A R G = 7.5Ω Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Typ 0.1 4 3.2 3.9 µA A 2.5 V ns µC 2-5 APTGF75DDA120T – Rev 1 August, 2005 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics APTGF75DDA120T Temperature sensor NTC (see application note APT0406 on www.advancedpower.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT = R 25 Max Unit kΩ K Min Typ Max 0.25 0.6 Unit T: Thermistor temperature Thermal and package characteristics VISOL TJ TSTG TC Torque Wt Typ 50 3952 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T Symbol Characteristic RthJC Min IGBT Diode Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M5 2500 -40 -40 -40 1.5 °C/W V 150 125 100 4.7 160 °C N.m g APT website – http://www.advancedpower.com 3-5 APTGF75DDA120T – Rev 1 August, 2005 SP4 Package outline (dimensions in mm) APTGF75DDA120T Typical Performance Curve Output Characteristics (VGE =15V) Output Characteristics 150 150 125 125 T J = 125°C 100 IC (A) IC (A) 75 50 VGE=12V 75 VGE=9V 50 T J=125°C 25 25 0 0 0 1 2 3 V CE (V) 4 5 6 0 150 28 125 24 2 3 4 V CE (V) VCE = 600V VGE = 15V RG = 7.5 Ω TJ = 125°C 20 E (mJ) 100 75 1 5 6 Energy losses vs Collector Current Transfert Characteristics IC (A) VGE=20V T J=25°C 100 TJ=125°C 50 Eon 16 12 8 TJ =25°C 25 4 Eoff 0 0 5 6 7 8 9 10 11 0 12 25 50 75 100 125 150 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 35 175 25 20 150 125 Eon IC (A) VCE = 600V VGE =15V IC = 75A T J = 125°C 30 E (mJ) VGE =15V 15 10 100 75 V GE=15V T J=125°C RG =7.5 Ω 50 Eoff 25 5 0 0 0 10 20 30 40 50 Gate Resistance (ohms) 60 0 70 300 600 900 1200 1500 V CE (V) maximum Effective Transient Thermal Impedance, Junction to Pulse Duration IGBT 0.25 0.9 0.2 0.7 0.15 0.5 0.1 0.3 0.05 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) APT website – http://www.advancedpower.com 1 10 4-5 APTGF75DDA120T – Rev 1 August, 2005 Thermal Impedance (°C/W) 0.3 APTGF75DDA120T Forward Characteristic of diode V CE=600V D=50% RG =7.5 Ω T J=125°C T C=75°C 90 80 70 60 250 ZCS 200 IC (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 100 ZVS 50 40 30 hard switching 20 10 150 T J=125°C 100 T J=25°C 50 0 0 0 20 40 60 IC (A) 80 0 100 0.5 1 1.5 VF (V) 2 2.5 3 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration Thermal Impedance (°C/W) 0.7 0.6 0.5 Diode 0.9 0.7 0.4 0.3 0.2 0.1 0.5 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 5-5 APTGF75DDA120T – Rev 1 August, 2005 rectangular Pulse Duration (Seconds)