APTGT35H120T3 Full - Bridge VCES = 1200V IC = 35A @ Tc = 80°C ® Trench IGBT Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control 13 14 CR3 19 Q2 22 7 23 8 CR2 26 Q3 11 10 Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Low stray inductance • High level of integration • Internal thermistor for temperature monitoring Q4 CR4 4 27 3 29 30 31 15 32 16 R1 28 27 26 25 20 19 18 23 22 29 16 30 15 31 14 32 13 2 3 4 7 8 10 11 12 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Easy paralleling due to positive TC of VCEsat • Each leg can be easily paralleled to achieve a phase leg of twice the current capability Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operation Area TC = 25°C Max ratings 1200 55 35 70 ±20 208 Tj = 125°C 70A@1150V TC = 25°C TC = 80°C TC = 25°C Unit V September, 2004 CR1 A V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-5 APTGT35H120T3 – Rev 0 Q1 18 APTGT35H120T3 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min BVCES ICES Collector - Emitter Breakdown Voltage Zero Gate Voltage Collector Current 1200 VCE(on) Collector Emitter on Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current VGE = 0V, IC = 1.5mA VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 35A Tj = 125°C VGE = VCE , IC = 1.5mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 35A R G = 27Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 35A R G = 27Ω Min Dynamic Characteristics Symbol Cies Cres Td(on) Tr Td(off) Tf Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) Tr Turn-on Delay Time Rise Time Td(off) Tf Eon Eoff Turn-off Delay Time Fall Time Turn-on Switching Energy X Turn-off Switching Energy Y 5.0 Typ 1.7 2.0 5.8 Typ 2.5 0.15 90 30 420 Max 5 2.1 Unit V mA V 6.5 400 V nA Max Unit nF ns 70 90 50 ns 520 90 3.5 4.1 mJ X Eon includes diode reverse recovery Y In accordance with JEDEC standard JESD24-1 VRRM Test Conditions Min Maximum Reverse Leakage Current VR=1200V Tj = 25°C Tj = 125°C IF(A V) Maximum Average Forward Current 50% duty cycle Tc = 70°C Diode Forward Voltage IF = 30A IF = 60A IF = 30A trr Reverse Recovery Time Qrr Reverse Recovery Charge Max 1200 Maximum Peak Repetitive Reverse Voltage IRM VF Typ IF = 30A VR = 800V di/dt =200A/µs V 250 500 Tj = 125°C 30 2.0 2.3 1.8 Tj = 25°C 370 Tj = 125°C Tj = 25°C 500 660 Tj = 125°C 3450 APT website – http://www.advancedpower.com Unit µA A 2.5 V ns September, 2004 Symbol Characteristic nC 2-5 APTGT35H120T3 – Rev 0 Reverse diode ratings and characteristics APTGT35H120T3 Temperature sensor NTC Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.16 K RT = R 25 Max Unit kΩ K Min Typ Max 0.6 1.2 Unit T: Thermistor temperature Symbol Characteristic VISOL TJ TSTG TC Torque Wt Typ 68 4080 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T Thermal and package characteristics RthJC Min IGBT Diode Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 2500 -40 -40 -40 °C/W V 150 125 100 4.7 110 °C N.m g 12 APT website – http://www.advancedpower.com 3-5 APTGT35H120T3 – Rev 0 28 17 1 September, 2004 Package outline APTGT35H120T3 Typical Performance Curve Output Characteristics (V GE=15V) Output Characteristics 70 80 70 VGE =17V 50 50 T J=125°C IC (A) IC (A) 60 T J = 125°C 60 TJ =25°C 40 30 VGE=15V 40 30 V GE =9V 20 20 10 10 0 0 0 0.5 1 1.5 2 V CE (V) 2.5 3 0 3.5 8 T J=25°C 60 6 T J=125°C 40 30 5 10 1 Eoff Eon 0 0 5 6 7 8 9 VGE (V) 10 11 0 12 10 20 30 40 50 60 70 80 IC (A) Switching Energy Losses vs Gate Resistance Reverse Safe Operating Area 80 VCE = 600V VGE =15V IC = 35A T J = 125°C 70 Eon 60 5 IC (A) 6 4 3 2 7 3 4 20 8 2 VCE (V) V CE = 600V V GE = 15V RG = 27Ω T J = 125°C 7 E (mJ) IC (A) 50 1 Energy losses vs Collector Current Transfert Characteristics 70 E (mJ) V GE =13V Eoff 50 40 30 4 VGE=15V T J=125°C RG=27Ω 20 3 10 2 0 25 45 65 85 Gate Resistance (ohms) 105 0 400 800 VCE (V) 1200 1600 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.5 0.9 September, 2004 0.6 0.7 0.4 0.3 0.2 0.1 0 0.00001 0.5 0.3 0.1 Single Pulse 0.05 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) APT website – http://www.advancedpower.com 1 10 4-5 APTGT35H120T3 – Rev 0 Thermal Impedance (°C/W) 0.7 APTGT35H120T3 Forward Characteristic of diode 80 V CE=600V D=50% RG =27Ω TJ =125°C TC=75°C 60 ZVS 40 70 60 50 IC (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 80 40 30 ZCS 20 20 hard switching TJ=125°C TJ=25°C 10 0 0 0 10 20 30 IC (A) 40 50 0 60 0.5 1 1.5 VF (V) 2 2.5 3 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration Thermal Impedance (°C/W) 1.4 1.2 1 Diode 0.9 0.7 0.8 0.6 0.5 0.4 0.3 0.2 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 5-5 APTGT35H120T3 – Rev 0 September, 2004 rectangular Pulse Duration (Seconds)